S i 5 2 11 2 - B 3 / B 4 PCI-E XPRESS G EN 2 DUAL O UTPUT C LOCK G ENERATOR Features PCI-Express Gen 1 and Gen 2 compliant Low power HCSL differential output buffers Supports Serial-ATA (SATA) at 100 MHz No termination resistors required 25 MHz Crystal Input or Clock input Triangular spread spectrum profile for maximum EMI reduction (Si52112-B4) Extended Temperature: –40 to 85 °C 3.3 V Power supply Small package 10-pin TDFN (3x3 mm) Si52112-B3 does not support spread spectrum outputs Si52112-B4 supports 0.5% down spread outputs For PCIe Gen3 applications, see Si52112-B5/B6 Ordering Information: See page 13 Pin Assignments Applications Network Attached Storage Multi-function Printer Wireless Access Point Routers VDD VDD 1 10 XOUT 2 9 DIFF2 XIN/CLKIN 3 8 DIFF2 VSS 4 7 DIFF1 VSS 5 6 DIFF1 Description Si52112-B3/B4 is a high-performance, PCIe clock generator that can source two PCIe clocks from a 25 MHz crystal or clock input. The clock outputs are compliant to PCIe Gen 1 and Gen 2 specifications. The ultrasmall footprint (3x3 mm) and industry leading low power consumption make Si52112-B3/B4 the ideal clock solution for consumer and embedded applications. Patents pending VDD DIFF1 XIN/CLKIN PLL Divider DIFF2 XOUT VSS Rev 1.2 Copyright © 2014 by Silicon Laboratories Si52112-B3/B4 Si52112-B3/B4 2 Rev 1.2 Si52112-B3/B4 TABLE O F C ONTENTS Section Page 1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2. Crystal Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.1. Crystal Loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2. Calculating Load Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 3. Test and Measurement Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1. 10-Pin TDFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2. 8-Pin TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6. Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6.1. TDFN Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.2. TSSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7. Recommended Design Guideline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Rev 1.2 3 Si52112-B3/B4 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit VDD(extended) 3.3 V ± 5% 3.13 3.3 3.46 V VDD(commercial) 3.3 V ± 10% 2.97 3.3 3.63 V Symbol Test Condition Min Typ Max Unit Operating Voltage VDD 3.3 V ±10% 2.97 3.30 3.63 V Operating Supply Current IDD Full Active — — 17 mA Input Pin Capacitance CIN Input Pin Capacitance — 3 5 pF COUT Output Pin Capacitance — — 5 pF Supply Voltage (extended) Supply Voltage (commercial) Table 2. DC Electrical Specifications Parameter Output Pin Capacitance 4 Rev 1.2 Si52112-B3/B4 Table 3. AC Electrical Specifications Parameter Symbol Test Condition Min Typ Max Unit LACC Measured at VDD/2 differential — — 250 ppm TDC Measured at VDD/2 45 — 55 % CLKIN Rise and Fall Times TR/TF Measured between 0.2 VDD and 0.8 VDD 0.5 — 4.0 V/ns CLKIN Cycle-to-Cycle Jitter TCCJ Measured at VDD/2 — — 250 ps CLKIN Long Term Jitter TLTJ Measured at VDD/2 — — 350 ps Input High Voltage VIH XIN/CLKIN pin 2 — VDD+0.3 V Input Low Voltage VIL XIN/CLKIN pin — — 0.8 V Input High Current IIH XIN/CLKIN pin, VIN = VDD — — 35 µA Input Low Current IIL XIN/CLKIN pin, 0 < VIN <0.8 –35 — — µA TDC Measured at 0 V differential 45 — 55 % TSKEW Measured at 0 V differential — — 60 ps Output Frequency FOUT VDD = 3.3 V — 100 — MHz Frequency Accuracy FACC All output clocks — — 100 ppm tr/f2 Measured differentially from ±150 mV 0.6 — 4.0 V/ns TCCJ Measured at 0 V differential — 28 70 ps PCIe Gen 1 Pk-Pk Jitter Pk-PkGEN1 PCIe Gen 1 — 24 86 ps PCIe Gen 2 Phase Jitter RMSGEN2 10 kHz < F < 1.5 MHz — 1.35 3.0 ps 1.5 MHz < F < Nyquist — 1.4 3.1 ps VOX 300 — 550 mV Voltage High VHIGH — — 1.15 V Voltage Low VLOW –0.3 — — V Spread Range SRNG Down Spread, -B4 only — –0.5 — % Modulation Frequency FMOD -B4 only 30 31.5 33 kHz TSTABLE — — 3 ms TSS 10.0 — — ns Crystal Long-term Accuracy Clock Input CLKIN Duty Cycle DIFF Clocks Duty Cycle Skew Slew Rate Cycle-to-Cycle Jitter Crossing Point Voltage at 0.7 V Swing Enable/Disable and Set-up Clock Stabilization from Powerup Stopclock Set-up Time Note: Visit www.pcisig.com for complete PCIe specifications. Rev 1.2 5 Si52112-B3/B4 Table 4. Thermal Conditions Parameter Symbol Test Condition Min Typ Max Unit Temperature, Storage TS Non-functional –65 — 150 °C Temperature, Operating Ambient TA Functional –40 — 85 °C Temperature, Junction TJ Functional — — 150 °C Dissipation, Junction to Case (TDFN) ØJC JEDEC (JESD 51) — — 38.3 °C/W Dissipation, Junction to Case (TSSOP) ØJC JEDEC (JESD 51) — — 37.0 °C/W Dissipation, Junction to Ambient (TDFN) ØJA JEDEC (JESD 51) — — 90.4 °C/W Dissipation, Junction to Ambient (TSSOP) ØJA JEDEC (JESD 51) — — 124.0 °C/W Min Typ Max Unit — — 4.6 V Table 5. Absolute Maximum Conditions Parameter Main Supply Voltage Input Voltage ESD Protection (Human Body Model) Flammability Rating Symbol Test Condition VDD_3.3V VIN Relative to VSS –0.5 — 4.6 VDC ESDHBM JEDEC (JESD 22 - A114) 2000 — — V UL-94 UL (Class) V–0 Note: While using multiple power supplies, the voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is not required. 6 Rev 1.2 Si52112-B3/B4 2. Crystal Recommendations If using a crystal input, the device requires a parallel resonance crystal. Table 6. Crystal Recommendations Frequency Cut Loading Load Cap (Fund) 25 MHz AT Parallel ESR Drive Shunt Motional Tolerance Stability Cap (max) (max) (max) (max) 12–15 pF <50 >150 µW 5 pF 0.016 pF 35 ppm 30 ppm Aging (max) 5 ppm 2.1. Crystal Loading Crystal loading is critical in achieving low ppm performance. To realize low ppm performance, use the total capacitance the crystal sees to calculate the appropriate capacitive loading (CL). Figure 1 shows a typical crystal configuration using two trim capacitors. It is important that the trim capacitors are in series with the crystal. Figure 1. Crystal Capacitive Clarification Rev 1.2 7 Si52112-B3/B4 2.2. Calculating Load Capacitors In addition to the standard external trim capacitors, consider the trace capacitance and pin capacitance to calculate the crystal loading correctly. Again, the capacitance on each side is in series with the crystal. The total capacitance on both sides is twice the specified crystal load capacitance (CL). Trim capacitors are calculated to provide equal capacitive loading on both sides. Figure 2. Crystal Loading Example Use the following formulas to calculate the trim capacitor values for Ce1 and Ce2. Load Capacitance (each side) Ce = 2 CL – Cs + Ci Total Capacitance (as seen by the crystal) 1 CLe = ------------------------------------------------------------------------------------------------------1 1 --------------------------------------------- + -------------------------------------------- Ce1 + Cs1 + Ci1 Ce2 + Cs2 + Ci2 CL: Crystal load capacitance Actual loading seen by crystal using standard value trim capacitors Ce: External trim capacitors Cs: Stray capacitance (terraced) Ci: Internal capacitance (lead frame, bond wires, etc.) CLe: 8 Rev 1.2 Si52112-B3/B4 3. Test and Measurement Setup Figures 3 through 5 show the test load configuration for the differential clock signals. M e a s u re m e n t P o in t L1 O U T+ 5 0 2 pF L1 = 5" O U T- M e a s u re m e n t P o in t L1 5 0 2 pF Figure 3. 0.7 V Differential Load Configuration Figure 4. Differential Measurement for Differential Output Signals (for AC Parameters Measurement) Rev 1.2 9 Si52112-B3/B4 Figure 5. Single-ended Measurement for Differential Output Signals (for AC Parameters Measurement) 10 Rev 1.2 Si52112-B3/B4 4. Pin Descriptions 4.1. 10-Pin TDFN VDD VDD 1 10 XOUT 2 9 DIFF2 XIN/CLKIN 3 8 DIFF2 VSS 4 7 DIFF1 VSS 5 6 DIFF1 Figure 6. 10-Pin TDFN Table 7. 10-Pin TDFN Descriptions Pin # Name Type Description 1 VDD 2 XOUT O 25.00 MHz crystal output, Float XOUT if using only CLKIN (clock input). 3 XIN/CLKIN I 25.00 MHz crystal input or 3.3 V, 25 MHz clock Input. 4 VSS GND Ground. 5 VSS GND Ground. 6 DIFF1 O, DIF 0.7 V, 100 MHz differential clock output. 7 DIFF1 O, DIF 0.7 V, 100 MHz differential clock output. 8 DIFF2 O, DIF 0.7 V, 100 MHz differential clock output. 9 DIFF2 O, DIF 0.7 V, 100 MHz differential clock output. 10 VDD PWR 3.3 V power supply. PWR 3.3 V power supply. Rev 1.2 11 Si52112-B3/B4 4.2. 8-Pin TSSOP VDD 1 8 DIFF2 XOUT 2 7 DIFF2 XIN/CLKIN 3 Si52112 VSS 4 6 DIFF1 5 DIFF1 Figure 7. 8-Pin TSSOP Table 8. 8-Pin TSSOP Descriptions Pin # Name 1 VDD 2 XOUT O 25.00 MHz crystal output, Float XOUT if using only CLKIN (clock input). 3 XIN/CLKIN I 25.00 MHz crystal input or 3.3 V, 25 MHz clock Input. 4 VSS GND 5 DIFF1 O, DIF 0.7 V, 100 MHz differentials clock. 6 DIFF1 O, DIF 0.7 V, 100 MHz differentials clock. 7 DIFF2 O, DIF 0.7 V, 100 MHz differentials clock. 8 DIFF2 O, DIF 0.7 V, 100 MHz differentials clock. 12 Type Description PWR 3.3 V Power supply. Ground. Rev 1.2 Si52112-B3/B4 5. Ordering Guide Part Number Spread Option Package Type Temperature Si52112-B3-GM2 No Spread 10-pin TDFN Extended, –40 to 85 °C Si52112-B3-GM2R No Spread 10-pin TDFN—Tape and Reel Extended, –40 to 85 °C Si52112-B3ZM21 No Spread 10-pin TDFN (UTAC only) Extended, –40 to 85 °C Si52112-B3ZM21R No Spread 10-pin TDFN (UTAC only) — Tape and Reel Extended, –40 to 85 °C Si52112-B3-GT No Spread 8-pin TSSOP Extended, –40 to 85 °C Si52112-B3-GTR No Spread 8-pin TSSOP - Tape and Reel Extended, –40 to 85 °C Si52112-B4-GM2 –0.5% Spread 10-pin TDFN Extended, –40 to 85 °C Si52112-B4-GM2R –0.5% Spread 10-pin TDFN—Tape and Reel Extended, –40 to 85 °C Si52112-B4ZM21 –0.5% Spread 10-pin TDFN (UTAC only) Extended, –40 to 85 °C Si52112-B4ZM21R –0.5% Spread 10-pin TDFN (UTAC only) — Tape and Reel Extended, –40 to 85 °C Si52112-B4-GT –0.5% Spread 8-pin TSSOP Extended, –40 to 85 °C Si52112-B4-GTR –0.5% Spread 8-pin TSSOP - Tape and Reel Extended, –40 to 85 °C Si52112 Bx Base part number A: Product Revision A x=3: non spread outputs x=4: -0.5% spread outputs GM2R/GTR/ZM21R Operating Temp Range: G: -40 to +85 °C M2 :10-TDFN Package, ROHS6, Pb-free ZM21: 10-TDFN Package, ROHS6, Pb-free, -40 to +85 °C, Assembly in UTAC T: 8-TSSOP Package, ROHS6, Pb-free R: Tape & Reel (blank) = Tubes Figure 8. Ordering Information Rev 1.2 13 Si52112-B3/B4 6. Package Outlines 6.1. TDFN Package Figure 9 illustrates the package details for the 10-pin TDFN. Table 9 lists the values for the dimensions shown in the illustration. Figure 9. 10-Pin TDFN Package Drawing 14 Rev 1.2 Si52112-B3/B4 Table 9. TDFN Package Diagram Dimensions Symbol Min Nom Max A 0.70 0.75 0.80 A1 0.00 0.02 0.05 A3 b 0.20 REF. 0.18 D D2 0.25 0.30 3.00 BSC. 1.90 2.00 e 0.50 BSC E 3.00 BSC 2.10 E2 1.40 1.50 1.60 L 0.25 0.30 0.35 aaa 0.10 bbb 0.10 ccc 0.10 ddd 0.10 eee 0.08 Notes: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. 4. This drawing conforms to the JEDEC Solid State Outline MO-229. Rev 1.2 15 Si52112-B3/B4 6.2. TSSOP Package Figure 10 illustrates the package details for the 8-pin TSSOP. Table 10 lists the values for the dimensions shown in the illustration. Figure 10. 8-Pin TSSOP Package Drawing 16 Rev 1.2 Si52112-B3/B4 Table 10. TSSOP Package Diagram Dimensions Symbol Min Nom Max A — — 1.20 A1 0.05 — 0.15 A2 0.80 0.90 1.05 b 0.19 — 0.30 c 0.09 — 0.20 D 2.90 3.00 3.10 E E1 6.40 BSC 4.30 e L 4.50 0.65 BSC 0.45 L2 θ 4.40 0.60 0.75 0.25 BSC 0° — aaa 0.10 bbb 0.10 ccc 0.05 ddd 0.20 8° Notes: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. This drawing conforms to the JEDEC Solid State Outline MO-153, Variation AA. 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020C specification for Small Body Components. Rev 1.2 17 Si52112-B3/B4 7. Recommended Design Guideline 3.3 V VDD 4.7 µF 0.1 µF Si5211x Note: FB Specifications: DC resistance 0.1–0.3 Impedance at 100 MHz > 1000 Figure 11. Recommended Application Schematic 18 Rev 1.2 Si52112-B3/B4 DOCUMENT CHANGE LIST Revision 1.0 to Revision 1.1 Added “4.2. 8-Pin TSSOP” pin description on page 12. Rev 1.2 19 ClockBuilder Pro One-click access to Timing tools, documentation, software, source code libraries & more. Available for Windows and iOS (CBGo only). www.silabs.com/CBPro Timing Portfolio www.silabs.com/timing SW/HW Quality Support and Community www.silabs.com/CBPro www.silabs.com/quality community.silabs.com Disclaimer Silicon Laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. 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