VISHAY MMBZ27VDA-V

MMBZ27VDA-V
Vishay Semiconductors
Small Signal Zener Diodes, Dual
Features
• Dual Silicon Planar Zener Diodes with
Common Anode configurations
e3
• Dual package provides for Bidirectional or
separate unidirectional configurations
• The dual configurations protect two separate lines
with only one device
• Peak Power: 40 W at 1 ms (Bidirectional)
• For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MMBZ27VDA
3
1
2
Common Anode
20048
Marking:
MMBZ27VDA-V = TA7
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Terminals: Solderable per MIL-STD-750,
method 2026
Packaging Codes/Options:
GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box
GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
PPK
40
W
Tamb = 25 °C
Derate above 25 °C
Ptot
225
1.8
mW
mW/°C
Tamb = 25 °C
Derate above 25 °C
Ptot
300
2.4
mW
mW/°C
Peak power dissipation1)
Power dissipation
on FR-5 Board2)
Power dissipation
on Alumina Substrate3)
1)
Nonrepetitive current pulse per Figure 2 and derate above Tamb = 25 °C per Figure 3.
2)
FR-5 = 1.0 x 0.75 x 0.62 in.
3)
Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.
Unit
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Thermal resistance junction to ambiant air
Parameter
RthJA
556
°C/W
Operating and storage temperature range
Tj, Tstg
- 55 to + 150
°C
Document Number 81294
Rev. 1.0, 08-Mar-06
Test condition
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MMBZ27VDA-V
Vishay Semiconductors
Electrical Characteristics
Partnumber
Breakdown
MMBZ27VDA-V
Voltage1)
Test
Current
Working
Peak
Reverse
Voltage
Max.
Reverse
Leakage
Current
Max.
Reverse
Surge
Current
Max. Reverse
Voltage
(Clamping
Voltage)
Max.
Temperature
Coefficient
VBR at IT
IT
VRWM
IR
IPP
VC at IRSM2)
at VBR
VF
at IF
V
mA
V
nA
A
V
mV/°C
V
mA
1.0
22.0
80
1.0
38.0
30
1.1
200
min
max
25.65
28.35
Max. Forward
Voltage
Note:
1)
VBR measured at pulse test current IT at an ambient temperature of 25 °C
2)
Surge current waveform per Figure 2 and derate per Figure 3
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
Peak pulse derating in % of peak
power or current at TA = 25 Z (°C)
P tot , POWER DISSIPATION (mW)
300
250
ALUMINA SUBSTRATE
200
150
FR-5 BOARD
100
50
0
50
25
0
25
0
18655
100
75
50
T, Temperature (°C)
125
150
175
tr
Peak Value - IRSM
100
Half Value -
0
18657
Figure 1. Steady State Power Derating Curve
Value (%)
75
25
75
100 125
50
150
TA - Ambient Temperature (°C)
175
200
Figure 3. Pulse Derating Curve
Pulse width (tp) is defined
as that point where the
peak current decays to
50 % of IRSM tr ≤ 10 µs
IRSM
2
50
tp
0
0
18656
1
3
2
t, Time (ms)
4
Figure 2. Pulse Waveform
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Document Number 81294
Rev. 1.0, 08-Mar-06
MMBZ27VDA-V
Vishay Semiconductors
Package Dimensions in mm (Inches)
17418
Document Number 81294
Rev. 1.0, 08-Mar-06
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MMBZ27VDA-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 81294
Rev. 1.0, 08-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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