MMDT3906-HF

Multi Chip Transistor
MMDT3906-HF (PNP+PNP)
RoHS Device
Halogen Free
Features
SOT-363
- Epitaxial planar die construction.
- Dual Transistor.
- Ideal for low power amplification and switching.
0.087(2.20)
0.079(2.00)
- Ultra small surface mount package.
6
5
4
1
2
3
0.053(1.35)
0.045(1.15)
Mechanical data
0.055(1.40)
0.047(1.20)
- Case: SOT-363 Standard package, molded
plastic.
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.096(2.45)
0.085(2.15)
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.014(0.35)
0.006(0.15)
- Mounting position: Any.
0.004(0.10)max
0.018(0.46)
0.010(0.26)
- Weight: 0.0078 grams(approx.).
Dimensions in inches and (millimeter)
Diagram:
- 1,4 : Emitter
- 2,5 : Base
- 3,6 : Collector
C2
B1
E1
E2
B2
C1
Maximum Ratings (at T =25°C unless otherwise noted)
A
Symbol
Value
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current-continuous
IC
-0.2
A
Collector power dissipation
PC
0.2
W
RΘJA
625
°C/W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
Parameter
Thermal resistance (Junction to ambient air)
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Multi Chip Transistor
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Conditions
Symbol
Min
Max
Unit
Collector-Base breakdown voltage
IC=-10μA , IE=0
V(BR)CBO
-40
V
Collector-Emitter breakdown voltage
IC=-1mA , IB=0
V(BR)CEO
-40
V
Emitter-Base breakdown voltage
IE=-10μA , IC=0
V(BR)EBO
-5
V
Collector cut-off current
VCE=-30V , VEB(OFF)=-3V
Base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
ICEX
-50
nA
VEB=-5V , IC=0
IEBO
-50
nA
VCE=-1V , IC=-0.1mA
hFE(1)
60
VCE=-1V , IC=-1mA
hFE(2)
80
VCE=-1V , IC=-10mA
hFE(3)
100
VCE=-1V , IC=-50mA
hFE(4)
60
VCE=-1V , IC=-100mA
hFE(5)
30
IC=-10mA , IB=-1mA
VCE(sat)1
IC=-50mA , IB=-5mA
VCE(sat)2
IC=-10mA , IB=-1mA
VBE(sat)1
IC=-50mA , IB=-5mA
VBE(sat)2
VCE=-20V , IC=-10mA , f=100MHz
300
-0.65
-0.25
V
-0.40
V
-0.85
V
-0.95
250
fT
V
MHz
Collector output capacitance
VCB=-5V , IE=0, f=1MHz
Cob
4.5
pF
Noise figure
VCE=-5V , IC=-0.1mA,
f=1KHz , Rg=1KΩ
NF
4
dB
td
35
nS
tr
35
nS
ts
225
nS
tf
75
nS
Delay time
VCC=-3V , VBE(off)=0.5V
IC=-10mA , IB1=-IB2=-1mA
Rise time
Storage time
VCC=-3V , IC=-10mA
IB1=-IB2=-1mA
Fall time
RATING AND CHARACTERISTIC CURVES (MMDT3906-HF)
Fig.1 - Static Characteristic
Fig.2 - hFE— IC
300
-100
-80
COMMON EMITTER
VCE=-1V
Ta=25°C
-500uA
-450uA
Ta=100°C
DC Current Gain, hFE
Collector Current, Ic (mA)
COMMON
-500uA
EMITTER
-450uA
-400uA
-350uA
-60
-300uA
-250uA
-200uA
-40
-150uA
-100uA
-20
200
Ta= 25°C
100
IB=-50uA
0
0
-4
-8
-12
-16
-20
0
-0.1
Collector-Emitter Voltage, VCE (V)
-1
-10
-100 -200
Collector Current , Ic (mA)
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Multi Chip Transistor
RATING AND CHARACTERISTIC CURVES (MMDT3906-HF)
Fig.4 - VBEsat — IC
Fig.3 - VCEsat — IC
-1.2
-300
Ta=100°C
-100
Ta=25°C
-30
Ta= 25°C
-0.8
Ta=100°C
VBEsat (V)
BASE-Emitter Saturation Voltage,
VCEsat (mV)
Collector-Emitter Saturation Voltage,
-500
-0.4
ß=10
ß=10
0
-10
-1
-10
-100
-200
-10
-1
-100
Collector Current , Ic (mA)
Collector Current, Ic (mA)
Fig.5 - IC — VEB
Fig.6 - Cob/Cib - VCB/VEB
-100
9
COMMON
-500uA
EMITTER
-450uA
-200
f=1MHZ
I-450uA
E=0/IC=0
Ta=25°C
VCE=-1V
Capacitance, C (pF)
Collector Current, IC ( mA)
Cob
Ta= 100°C
-10
Ta= 25°C
-1
-0.1
-0.2
-0.4
-0.6
-0.8
1
-0.1
-1.2
-1.0
-10
Reverse Voltage , V (V)
Fig.7 - fT — IC
Fig.8 - PC — Ta
-20
350
Collector Power Dissipation, Pc (mW)
VCE=20V
T-450uA
a=25°C
400
200
-1
3
Base-Emitter Voltage , VBE ( V )
600
Transition Frequency, fT (MHZ)
-1.0
Cib
200
150
100
50
0
-10
-50
0
Collector Current , IC (mA)
25
50
75
100
125
150
Ambient Temperature , Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Multi Chip Transistor
Reel Taping Specification
P1
W
B
F
E
d
P0
C
A
P
12
o
0
D2
D1
D
W1
SYMBOL
SOT-363
SOT-363
A
B
C
d
D
D1
D2
1.20 ± 0.10
1.50 + 0.10
- 0.00
178.00 ± 1.00
54.40 ± 0.40
13.00 ± 1.00
0.059 + 0.004
- 0.000
7.008 ± 0.039
2.142 ± 0.016
0.512 ± 0.039
(mm)
2.25 ± 0.10
(inch)
0.089 ± 0.004
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30
- 0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.315 + 0.012
- 0.004
0.484 ± 0.039
2.55 ± 0.10
0.100 ± 0.004 0.047 ± 0.004
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Comchip Technology CO., LTD.
Multi Chip Transistor
Marking Code
6
Part Number
Marking Code
MMDT3906-HF
. K3N
.
5
4
K3N
1
2
3
Suggested PAD Layout
C
SOT-363
SIZE
(mm)
(inch)
A
0.40
0.016
B
0.80
0.031
C
0.65
0.026
D
1.94
0.076
D
B
A
Standard Packaging
REEL PACK
Case Type
SOT-363
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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Comchip Technology CO., LTD.