RoHS MMDT3906 MMDT3906 Multi-Chip TRANSISTOR (PNP) PCM: 0.2 D T ,. L SOT-363 FEATURES Power dissipation W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ IC MAKING: K3N N C O ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test R T Collector cut-off current ICBO Emitter cut-off current IEBO C E L conditions O MIN TYP MAX UNIT Ic=-10µA, IE=0 -40 V Ic=-1mA, IB=0 -40 V IE=-10µA, IC=0 -5 V VCB=-30V, IE=0 -0.05 µA VEB=-5V, IC=0 -0.05 µA hFE(1) VCE=-1V, IC=-0.1mA 60 hFE(2) VCE=-1V, IC=-1mA 80 hFE(3) VCE=-1V, IC=-10mA 100 hFE(4) VCE=-1V, IC=-50mA 60 hFE(5) VCE=-1V, IC=-100mA 30 VCE(sat)1 IC=-10mA, IB=-1mA -0.25 V VCE(sat)2 IC=-50mA, IB=-5mA -0.4 V VBE(sat)1 IC=-10mA, IB=-1mA -0.85 V VBE(sat)2 IC=-50mA, IB=-5mA -0.95 V fT VCE=-20V, IC=-10mA, f=100MHz Collector output capacitance Cob VCB=-5V, IE=0, f=1MHz Noise figure NF Delay time td VCC=-3V, VBE=0.5V Rise time tr IC=-10mA , IB1=-IB2=- 1mA Storage time tS VCC=-3V, IC=-10mA Fall time tf IB1=-IB2=- 1mA DC current gain E Collector-emitter saturation voltage J E Base-emitter saturation voltage Transition frequency W WEJ ELECTRONIC CO. VCE=-5V, Ic=-0.1mA, f=1KHZ, Rg=1KΩ Http:// www.wej.cn -0.65 300 250 MHz 4.5 pF 4 dB 35 nS 35 nS 225 nS 75 nS E-mail:[email protected]