WINNERJOIN MMDT3906

RoHS
MMDT3906
MMDT3906
Multi-Chip TRANSISTOR (PNP)
PCM:
0.2
D
T
,. L
SOT-363
FEATURES
Power dissipation
W (Tamb=25℃)
Collector current
ICM:
-0.2
A
Collector-base voltage
V(BR)CBO:
-40
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
IC
MAKING: K3N
N
C
O
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Test
R
T
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
C
E
L
conditions
O
MIN
TYP
MAX
UNIT
Ic=-10µA, IE=0
-40
V
Ic=-1mA, IB=0
-40
V
IE=-10µA, IC=0
-5
V
VCB=-30V, IE=0
-0.05
µA
VEB=-5V, IC=0
-0.05
µA
hFE(1)
VCE=-1V, IC=-0.1mA
60
hFE(2)
VCE=-1V, IC=-1mA
80
hFE(3)
VCE=-1V, IC=-10mA
100
hFE(4)
VCE=-1V, IC=-50mA
60
hFE(5)
VCE=-1V, IC=-100mA
30
VCE(sat)1
IC=-10mA, IB=-1mA
-0.25
V
VCE(sat)2
IC=-50mA, IB=-5mA
-0.4
V
VBE(sat)1
IC=-10mA, IB=-1mA
-0.85
V
VBE(sat)2
IC=-50mA, IB=-5mA
-0.95
V
fT
VCE=-20V, IC=-10mA, f=100MHz
Collector output capacitance
Cob
VCB=-5V, IE=0, f=1MHz
Noise figure
NF
Delay time
td
VCC=-3V, VBE=0.5V
Rise time
tr
IC=-10mA , IB1=-IB2=- 1mA
Storage time
tS
VCC=-3V, IC=-10mA
Fall time
tf
IB1=-IB2=- 1mA
DC current gain
E
Collector-emitter saturation voltage
J
E
Base-emitter saturation voltage
Transition frequency
W
WEJ ELECTRONIC CO.
VCE=-5V, Ic=-0.1mA,
f=1KHZ, Rg=1KΩ
Http:// www.wej.cn
-0.65
300
250
MHz
4.5
pF
4
dB
35
nS
35
nS
225
nS
75
nS
E-mail:[email protected]