Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMDT3906
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
DUAL PNP SMALL SIGNAL
SURFACE MOUNT TRANSISTOR

DESCRIPTION
The UTC MMDT3906 is a Dual PNP small signal surface mount
transistor. It’s suitable for low power amplification and switch.

FEATURES
* Suitable for Low Power Amplification and Switching
* Epitaxial Planar Die Construction
* Extremely-Small Surface Mount Package

EQUIVALENT CIRCUIT

ORDERING INFORMATION

Ordering Number
Package
MMDT3906G-AL6-R
SOT-363
Pin Assignment
1
2
3
4
5
6
E1 B1 C2 E2 B2 C1
Packing
Tape Reel
MARKING
6
5
4
D2AG
1
2
3
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMDT3906

Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current-Continuous
IC
-200
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
625
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF Characteristics (Note)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
MIN
VCBO
VCEO
VEBO
ICEX
IBL
IC=-10A,IE=0
IC=-1mA, IB=0
IE=-10A, IC=0
VCE=-30V, VEB=-3V
VCE=-30V, VEB=-3V
-40
-40
-5
hFE1
hFE2
hFE3
hFE4
hFE5
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
60
80
100
60
30
VCE(SAT)1
VCE(SAT)2
VBE(SAT)1
VBE(SAT)2
Small Signal Characteristics
Output Capacitance
Current Gain-Bandwidth Product
Switching Characteristics
COB
fT
Turn on Time
tON
Turn off Time
tOFF
Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VCB=-5V,IE=0, f=1MHz
VCE=-20V, IC=-10mA, f=100MHz
VCC=-3V, VBE=-0.5V, IC=-10mA,
IB1=-1mA
IB1=1B2=-1mA
TYP MAX UNIT
-50
-50
-0.65
V
V
V
nA
nA
300
-0.25
-0.4
-0.85
-0.95
V
V
V
V
4.5
pF
MHz
70
ns
300
ns
250
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MMDT3906
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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