UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Suitable for Low Power Amplification and Switching * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Package MMDT3906G-AL6-R SOT-363 Pin Assignment 1 2 3 4 5 6 E1 B1 C2 E2 B2 C1 Packing Tape Reel MARKING 6 5 4 D2AG 1 2 3 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-014.d MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current-Continuous IC -200 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (TA=25°C, unless otherwise specified) PARAMETER Junction to Ambient SYMBOL θJA RATINGS 625 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF Characteristics (Note) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON Characteristics (Note) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL MIN VCBO VCEO VEBO ICEX IBL IC=-10A,IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V -40 -40 -5 hFE1 hFE2 hFE3 hFE4 hFE5 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA 60 80 100 60 30 VCE(SAT)1 VCE(SAT)2 VBE(SAT)1 VBE(SAT)2 Small Signal Characteristics Output Capacitance Current Gain-Bandwidth Product Switching Characteristics COB fT Turn on Time tON Turn off Time tOFF Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VCB=-5V,IE=0, f=1MHz VCE=-20V, IC=-10mA, f=100MHz VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-1mA IB1=1B2=-1mA TYP MAX UNIT -50 -50 -0.65 V V V nA nA 300 -0.25 -0.4 -0.85 -0.95 V V V V 4.5 pF MHz 70 ns 300 ns 250 2 of 3 QW-R218-014.d MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R218-014.d