Low Capacitance SMD ESD Protection Diode CPDVR5V0P-HF RoHS Device Halogen Free WBFBP-02C-A Features - IEC61000-4-2 Level 4 ESD Protection. 0.026(0.65) 0.022(0.55) - Bi-directional ESD protection of one line. - Fast response time. 0.041(1.05) 0.037(0.95) - Low Leakage current. 0.004(0.09) 0.000(0.01) - Low reverse clamping voltage. - Low capacitance. 0.022(0.55) 0.018(0.45) Mechanical data 0.015(0.39) REF. - Case: WBFBP-02C-A plastic-encapsulate diodes - Terminals: Tin plated, solderable per MIL-STD-750, method 2026. 0.015(0.37) 0.011(0.27) 0.002(0.05) REF. - Mounting position: Any. 0.002(0.05) REF. 0.017(0.42) REF. 0.020(0.50) 0.016(0.40) Circuit Diagram 0.014(0.36) REF. 0.027(0.68) 0.023(0.58) Dimensions in inches and (millimeter) Maximum Rating (at TA=25°C unless otherwise noted) Symbol Parameter ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) JESD22-A114-B ESD Voltage ESD Voltage PPP 52 W 4 A TL 260 °C TJ, TSTG -55 to +150 °C Peak Pulse Current IPP Maximum (10 Second Duration) Junction & Storage temperature range kV ±16 0.4 (3) Peak Pulse Power Lead Solder Temperature ±15 ±15 (1) VESD Per Human Body Model Per Machine Model Unit Value (3) Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Reverse stand-Off voltage VRWM Reverse leakage current VRWM = 5 V Breakdown voltage IT = 1 mA V(BR) Clamping voltage IPP= 4 A VC Junction capacitance VR= 0V , F=1MHz CJ Min Typ (2) IR 5.6 (3) 3 Max Unit 5 V 1 μA 8 V 13 V pF Notes: 1. Device stressed with ten non-repetitive ESD pulses. 2. Other voltages available upon request. 3. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP056 Page 1 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDVR5V0P-HF) Fig.1 - 8/20us Peak Pulse Current Waveform ACC. IEC 61000-4-5 Peak Valur Ipp 100% Percentage of Ipp Test Waveform parameters tf=8us td=20us Ta=25°C e-t 80% 60% 40% td= t Ipp/2 20% 0% 4 TA=25°C f=1MHz Junction Capacitance, CJ (pF) 120% Fig.2 - Typical Capacitance Characteristics 3 2 1 0 0 5 10 15 20 25 30 0 Time, (us) 1 2 3 4 5 6 Reverse Voltage, VR ( V ) Fig.3 - Clamping Voltage Vs. Peak Pulse Current 15 Clamping voltage, VC (V) TA=25°C tp=8/20us 12 9 6 3 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Reverse Peak Pulse Current, IPP (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP056 Page 2 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification P0 P1 d F W E C A P D1 D2 D W1 Trailer Tape 100±4 Empty Pockets WBFBP -02C-A WBFBP -02C-A Leader Tape 200±4 Empty Pockets Components SYMBOL A B C d D D1 D2 (mm) 0.66 ± 0.05 1.15 ± 0.05 0.66 ± 0.05 1.50 + 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.026 ± 0.002 0.045 ± 0.002 0.026 ± 0.002 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 2.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.079 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP056 Page 3 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code Marking Code Part Number CPDVR5V0P-HF HD HD Suggested PAD Layout WBFBP-02C-A D SIZE (mm) (inch) A 0.55 0.022 B 0.52 0.020 C 0.15 0.006 D 0.63 0.025 E 1.00*0.60 PKG. E C A C B Standard Packaging REEL PACK Case Type WBFBP-02C-A REEL Reel Size ( pcs ) (inch) 10,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP056 Page 4 Comchip Technology CO., LTD.