STEW05CFN Plastic Encapsulate ESD Protection Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free WBFBP-03D DESCRIPTION This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up to 2 data lines in a unidirectional mode or, 1 data line in a bi-directional mode, in application where the board space is a premium, in our WBFBP-03D package version. D E L C D IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance Low Leakage Current, Maximum of 0.5µA at rated voltage Maximum Capacitance of 10pF per device at 0Vdc 1MHz Peak Power Dissipation of 20W 8/20µs Waveform Pin to pin compatible with standard WBFBP-03D In compliance with EU RoHS 2002/95/EC directives REF. A B C D E F F K A MECHANICAL DATA H B FEATURES G J Millimeter Min. Max. 0.950 1.050 0.950 1.050 0.010 0.070 0.210 0.310 0.350 REF. 0.680 REF. REF. G H J K L Millimeter Min. Max. 0.050 0.510 0.610 0.250 0.350 0.050 0.450 0.550 Case:WBFBP-03D,Molded Plastic Terminals: Solderable per MIL-STD-750, Method 2026 MARKING: AF PACKAGE INFORMATION Package MPQ Leader Size WBFBP-03D 8K 7 inch MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Peak Pulse Power (8/20µs Waveform) PPP 20 W Peak Pulse Current (8/20µs Waveform) IPPM 2 A VESD 20 kV TJ -55 ~ 125 °C TSTG -55 ~ 150 °C ESD Voltage (HBM Per MIL STD883C-Method 3015-6) Operating Temperature Range Storage temperature Range http://www.SeCoSGmbH.com 27-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 STEW05CFN Plastic Encapsulate ESD Protection Diodes Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Working Peak Reverse Voltage Reverse Breakdown Voltage Symbol Min. Typ. Max. Unit VRWM - - 5.0 V VBR 6.2 - 7.2 V Test Condition IBR=1mA Reverse Leakage Current IR - - 0.5 µA VR=5V Clamping Voltage (8/20 µs) VC - - 10 V IPP=2A CJ - 9 10 pF 0Vdc Bias f=1Mhz between pin 1,2 to 3 (Gnd) 1 Typical Junction Capacitance Note: 1. Capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration. CHARACTERISTIC CURVES http://www.SeCoSGmbH.com 27-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2