PMGD400UN Dual N-channel µTrenchMOS™ ultra low level FET Rev. 01 — 3 March 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Surface mounted package ■ Dual device ■ Low on-state resistance ■ Footprint 40% smaller than SOT23 ■ Fast switching ■ Low threshold voltage. 1.3 Applications ■ Driver circuits ■ Switching in portable appliances. 1.4 Quick reference data ■ VDS ≤ 30 V ■ Ptot ≤ 0.41 W ■ ID ≤ 0.71 A ■ RDSon ≤ 480 mΩ. 2. Pinning information Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol Pin Description 1 source (s1) 2 gate (g1) 3 drain (d2) 4 source (s2) 5 gate (g2) 6 drain (d1) Simplified outline 6 5 4 1 2 3 Symbol d1 s1 Top view MSA370 SOT363 (SC-88) d2 g1 s2 g2 MSD901 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 3. Ordering information Table 2: Ordering information Type number PMGD400UN Package Name Description Version SC-88 Plastic surface mounted package; 6 leads SOT363 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 30 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage (DC) drain current (DC) ID - ±8 V Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 [1] - 0.71 A - 0.45 A - 1.42 A - 0.41 W Tsp = 100 °C; VGS = 4.5 V; Figure 2 [1] IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 [1] Ptot total power dissipation Tsp = 25 °C; Figure 1 Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C [1] - 0.34 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs [1] - 0.69 A [1] Single device conducting. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data Rev. 01 — 3 March 2004 2 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 0 200 50 100 150 Tsp (°C) P tot P der = ----------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 03an21 10 ID (A) 200 Tsp (°C) Limit RDSon = VDS / ID tp = 10 µ s 1 100 µ s 1 ms DC 10-1 10 ms 100 ms 10-2 10-1 1 102 10 VDS (V) Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data Rev. 01 — 3 March 2004 3 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to solder point Figure 4 Rth(j-sp) Min Typ Max Unit - - 300 K/W 5.1 Transient thermal impedance 03an28 103 Zth(j-sp) (K/W) δ = 0.5 102 0.2 0.1 0.05 0.02 10 single pulse δ= P tp T t tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data Rev. 01 — 3 March 2004 4 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 1 µA; VGS = 0 V Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V Tj = 25 °C 0.45 0.7 1 V Tj = 150 °C 0.25 - - V Tj = −55 °C - - 1.2 V - - 1 µA ID = 0.25 mA; VDS = VGS; Figure 9 VDS = 30 V; VGS = 0 V Tj = 25 °C Tj = 150 °C - - 100 µA - 10 100 nA Tj = 25 °C - 400 480 mΩ Tj = 150 °C IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 4.5 V; ID = 0.2 A; Figure 7 and 8 - 660 816 mΩ VGS = 2.5 V; ID = 0.1 A; Figure 7 and 8 - 480 580 mΩ VGS = 1.8 V; ID = 0.075 A; Figure 7 and 8 - 580 830 mΩ ID = 1 A; VDD = 15 V; VGS = 4.5 V; Figure 13 - 0.89 - nC - 0.1 - nC - 0.2 - nC - 43 - pF - 7.7 - pF - 4.8 - pF - 4 - ns - 7.5 - ns Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 18 - ns tf fall time - 4.5 - ns - 0.76 1.2 V VDD = 15 V; RL = 15 Ω; VGS = 4.5 V; RG = 6 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 0.3 A; VGS = 0 V; Figure 12 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data Rev. 01 — 3 March 2004 5 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 03an94 2.5 4.5 V ID (A) 3V 03an96 2.5 2.5 V ID (A) 2 VDS > ID x RDSon 2 25 °C 2V 1.5 Tj = 150 °C 1.5 1.8 V 1 1 VGS = 1.5 V 0.5 0.5 0 0 0 0.5 1 1.5 2 VDS (V) Tj = 25 °C 0 1 2 3 VGS (V) 4 Tj = 25 °C and 150 °C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03an95 1 VGS = 1.8 V RDSon Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03al00 1.8 2V (Ω) 0.8 a 2.5 V 1.2 0.6 3V 4.5 V 0.4 0.6 0.2 0 0 0 0.5 1 1.5 2 ID (A) 2.5 Tj = 25 °C -60 60 120 Tj (°C) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data 0 Rev. 01 — 3 March 2004 6 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 03aj65 1 03am43 10-3 VGS(th) (V) 0.8 ID (A) typ 10-4 0.6 min min typ 0.4 10-5 0.2 10-6 0 -60 0 60 120 Tj (°C) 180 0 0.2 0.4 0.6 0.8 VGS (V) Tj = 25 °C; VDS = 5 V ID = 0.25 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03an98 102 C (pF) Ciss 10 Coss Crss 1 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data Rev. 01 — 3 March 2004 7 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 03an97 1 IS (A) 0.8 03an99 5 VGS = 0 V ID = 1 A VGS (V) 4 Tj = 25 °C VDD = 15 V 0.6 3 0.4 2 1 0.2 150 °C Tj = 25 °C 0 0 0 0.2 0.4 0.6 0.8 1 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V 0 0.4 0.6 0.8 1 QG (nC) ID = 1 A; VDD = 15 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data 0.2 Rev. 01 — 3 March 2004 8 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 7. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig 14. SOT363 (SC-88). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data Rev. 01 — 3 March 2004 9 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 8. Soldering 2.65 0.60 (2×) 0.40 0.90 2.10 (2×) 2.35 solder paste 0.50 (4×) solder lands 0.50 (4×) solder resist occupied area 1.20 2.40 MSA432 Dimensions in mm. Fig 15. Reflow soldering footprint for SOT363 (SC-88). 9. Revision history Table 6: Revision history Rev Date 01 20040303 CPCN Description - Product data (9397 750 12759) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Product data Rev. 01 — 3 March 2004 10 of 12 PMGD400UN Philips Semiconductors Dual N-channel µTrenchMOS™ ultra low level FET 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 12. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12759 Rev. 01 — 3 March 2004 11 of 12 Philips Semiconductors PMGD400UN Dual N-channel µTrenchMOS™ ultra low level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 March 2004 Document order number: 9397 750 12759