Data Sheet

PBSM5240PF
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel
Trench MOSFET
Rev. 2 — 20 April 2011
Product data sheet
1. Product profile
1.1 General description
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„
„
„
„
„
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Loadswitch
„ Power management
„ Power switches (e.g. motors, fans)
„ Battery-driven devices
„ Charging circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
−40
V
PNP low VCEsat (BISS) transistor
VCEO
collector-emitter voltage
open base
[1]
-
−1.8
A
[1][5]
-
-
−2
A
IC
collector current
ICRM
repetitive peak collector
current
ICM
peak collector current
single pulse; tp ≤ 1 ms
[1]
-
-
−3
A
collector-emitter
saturation resistance
IC = −500 mA;
IB = −50 mA
[2]
-
240
340
mΩ
RCEsat
PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
30
V
N-channel Trench MOSFET
VDS
drain-source voltage
Tamb = 25 °C
VGS
gate-source voltage
Tamb = 25 °C
ID
drain current
RDSon
drain-source on-state
resistance
-
-
±8
V
Tamb = 25 °C;
VGS = 10 V
[3]
-
-
0.66
A
Tj = 25 °C; VGS = 4.5 V;
ID = 0.2 A
[4]
-
370
580
mΩ
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[4]
Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
[5]
Pulse test: tp ≤ 20 ms; δ ≤ 0.10.
2. Pinning information
Table 2.
Pinning
Pin
Description
1
emitter
2
base
3
drain
4
source
5
gate
6
collector
7
collector
8
drain
Simplified outline
6
5
7
1
4
Graphic symbol
6, 7
5
4
1
2
3, 8
8
2
3
Transparent top view
017aaa079
3. Ordering information
Table 3.
Ordering information
Type number
PBSM5240PF
Package
Name
Description
Version
HUSON6
plastic thermal enhanced ultra thin small outline
SOT1118
package; no leads; 6 terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4.
PBSM5240PF
Product data sheet
Marking codes
Type number
Marking code
PBSM5240PF
1G
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 20
PBSM5240PF
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40 V, 2 A PNP BISS/Trench MOSFET module
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PNP low VCEsat (BISS) transistor
VCBO
collector-base voltage
open emitter
-
−40
V
VCEO
collector-emitter voltage
open base
-
−40
V
VEBO
emitter-base voltage
open collector
collector current
IC
-
−5
V
[1]
-
−1.8
A
[1][4]
-
−2
A
[1]
-
−3
A
[1]
ICRM
repetitive peak collector
current
ICM
peak collector current
IB
base current
-
−300
mA
IBM
peak base current
single pulse;
tp ≤ 1 ms
[1]
-
−1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
1.1
W
[2]
-
1.25
W
single pulse;
tp ≤ 1 ms
N-channel Trench MOSFET
VDS
drain-source voltage
Tamb = 25 °C
-
30
V
VDG
drain-gate voltage
Tamb = 25 °C;
RGS = 20 kΩ
-
30
V
VGS
gate-source voltage
Tamb = 25 °C
-
±8
V
Tamb = 25 °C
-
660
mA
Tamb = 100 °C
-
420
mA
-
3.56
A
-
760
mW
-
660
mA
drain current
ID
VGS = 10 V
IDM
peak drain current
Tamb = 25 °C;
single pulse;
tp ≤ 10 μs
Ptot
total power dissipation
Tamb = 25 °C
[3]
[3]
Source-drain diode
source current
IS
Tamb = 25 °C
Per device
PBSM5240PF
Product data sheet
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[4]
Pulse test: tp ≤ 20 ms; δ ≤ 0.10.
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
3 of 20
PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
006aac608
1.4
Ptot
(W)
1.2
(1)
(2)
1.0
(3)
0.8
0.6
(4)
0.4
0.2
0.0
–75
–25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, single-sided copper, standard footprint
Fig 1.
BISS transistor: Power derating curves
03aa17
120
03aa25
120
Pder
(%)
Ider
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
Tsp (°C)
ID
I der = -------------------- × 100 %
I D ( 25°C )
MOSFET: Normalized total power dissipation
as a function of solder point temperature
PBSM5240PF
Product data sheet
200
Tsp (°C)
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
Fig 2.
150
Fig 3.
MOSFET: Normalized continuous drain current
as a function of solder point temperature
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
006aac609
10
ID
(A)
Limit RDSon = VDS/ID
1
(1)
(2)
(3)
10–1
(4)
(5)
10–2
10–1
1
10
VDS (V)
102
IDM = single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 °C
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 4.
MOSFET: Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
PBSM5240PF
Product data sheet
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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PBSM5240PF
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40 V, 2 A PNP BISS/Trench MOSFET module
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
115
K/W
[2]
-
-
100
K/W
[3]
-
-
165
K/W
PNP low VCEsat (BISS) transistor
Rth(j-a)
thermal resistance from
junction to ambient
in free air
N-channel Trench MOSFET
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
006aac610
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.2
0.1
0.05
10
0.02
0
1
10–5
0.01
10–4
10–3
10–2
10–1
1
10
102
tp (s)
103
FR4 PCB, single-sided copper, standard footprint
Fig 5.
PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSM5240PF
Product data sheet
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
6 of 20
PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
006aac611
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0
1
–5
10
0.01
10–4
10–3
10–2
10–1
1
10
102
tp (s)
103
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 6.
PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac612
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0
1
–5
10
0.01
10–4
10–3
10–2
10–1
1
10
102
tp (s)
103
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 7.
PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSM5240PF
Product data sheet
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
7 of 20
PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
006aac613
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0
1
–5
10
0.01
10–4
10–3
10–2
10–1
1
102
10
tp (s)
103
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 8.
PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac614
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.1
0.25
0.2
10
0
1
10–3
0.05
0.02
0.01
10–2
10–1
1
10
102
tp (s)
103
FR4 PCB, single-sided copper, mounting pad for drain 1 cm2
Fig 9.
MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
PBSM5240PF
Product data sheet
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
8 of 20
PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
7. Characteristics
Table 7.
Characteristics for PNP low VCEsat transistor
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base
cut-off current
VCB = −40 V; IE = 0 A
-
-
−100
nA
VCB = −40 V; IE = 0 A;
Tj = 150 °C
-
-
−50
μA
ICEO
collector-emitter cut-off VCE = −30 V; IB = 0 A
current
-
-
−100
nA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −5 V
IC = −1 mA
300
-
-
IC = −100 mA
300
-
800
IC = −500 mA
200
-
-
[1]
IC = −1 A
VCEsat
Product data sheet
-
-
IC = −100 mA; IB = −1 mA
-
−85
−140
mV
IC = −500 mA; IB = −50 mA
[1]
-
−120
−170
mV
IC = −1 A; IB = −100 mA
[1]
-
−200
−310
mV
IC = −500 mA; IB = −50 mA
[1]
-
240
340
mΩ
[1]
-
-
−1.1
V
[1]
-
-
−1
V
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation IC = −1 A; IB = −100 mA
voltage
VBEon
base-emitter turn-on
voltage
VCE = −5 V; IC = −1 A
fT
transition frequency
VCE = −10 V; IC = −50 mA;
f = 100 MHz
150
-
-
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
-
-
12
pF
[1]
PBSM5240PF
collector-emitter
saturation voltage
140
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
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© NXP B.V. 2011. All rights reserved.
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PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
006aaa465
1200
hFE
800
−2.4
006aaa469
IC
(A)
IB (mA) = −24
−21.6
−19.2
−16.8
−14.4
−12
−9.6
−1.6
(1)
−7.2
(2)
−4.8
−0.8
400
−2.4
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
0
0
VCEsat = −5 V
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. PNP transistor: DC current gain as a function
of collector current; typical values
006aac615
–1.6
Fig 11. PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
006aaa468
−1.3
VBE
(V)
VBEsat
(V)
–1.2
−0.9
(1)
(1)
–0.8
(2)
(2)
–0.4
−0.5
(3)
(3)
–0.0
–10–1
–1
–10
–102
–103
–104
IC (mA)
VCEsat = −5 V
−0.1
−10−1
−1
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 12. PNP transistor: Base-emitter voltage as a
function of collector current; typical values
Product data sheet
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
PBSM5240PF
−10
Fig 13. PNP transistor: Base-emitter saturation
voltage as a function of collector current;
typical values
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© NXP B.V. 2011. All rights reserved.
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PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
006aaa466
−1
006aaa471
−10
VCEsat
(V)
VCEsat
(V)
−1
−10−1
−10−1
(1)
(2)
(1)
(2)
−10−2
−10−1
−10−2
(3)
−1
−10
−102
−103
−104
IC (mA)
(3)
−10−3
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 14. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa470
103
Fig 15. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa472
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
(1)
10
(2)
10
(3)
1
1
(1)
(2)
(3)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
10−1
−10−1
−1
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 16. PNP transistor: Collector-emitter saturation
resistance as a function of collector current;
typical values
Product data sheet
−102
−103
−104
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
PBSM5240PF
−10
Fig 17. PNP transistor: Collector-emitter saturation
resistance as a function of collector current;
typical values
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
Table 8.
Characteristics for N-channel Trench MOSFET
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
30
-
-
V
27
-
-
V
Tj = 25 °C
0.45
0.7
0.95
V
Tj = 150 °C
0.25
-
-
V
Tj = −55 °C
-
-
1.15
V
Tj = 25 °C
-
-
1
μA
Tj = 150 °C
-
-
100
μA
-
10
±100
nA
Tj = 25 °C
-
370
580
mΩ
Tj = 150 °C
-
663
985
mΩ
VGS = 2.5 V; ID = 0.1 A
-
440
690
mΩ
VGS = 1.8 V; ID = 75 mA
-
540
920
mΩ
ID = 1 A; VDS = 15 V;
VGS = 4.5 V
-
0.89
-
nC
-
0.1
-
nC
-
0.2
-
nC
-
43
-
pF
-
7.7
-
pF
-
4.8
-
pF
-
4.0
-
ns
-
7.5
-
ns
Static characteristics
V(BR)DSS
drain-source breakdown ID = 10 μA; VGS = 0 V
voltage
Tj = 25 °C
Tj = −55 °C
VGS(th)
IDSS
IGSS
RDSon
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
ID = 250 μA; VDS = VGS
VDS = 30 V; VGS = 0 V
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 0.2 A
[1]
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
18
-
ns
tf
fall time
-
4.5
-
ns
-
0.76
1.2
V
VGS = 0 V; VDS = 25 V;
f = 1 MHz
VDS = 15 V; RL = 15 Ω;
VGS = 10 V; RG = 6 Ω
Source-drain diode
VSD
[1]
PBSM5240PF
Product data sheet
source-drain voltage
IS = 0.3 A; VGS = 0 V
Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
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© NXP B.V. 2011. All rights reserved.
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PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
03an94
2.5
4.5
ID
(A)
3
03am43
10−3
2.5
ID
(A)
2
2
10−4
min
typ
max
1.5
1.8
1
10−5
VGS (V) = 1.5
0.5
10−6
0
0
0.5
1
1.5
VDS (V)
2
0
0.4
0.8
1.2
VGS (V)
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig 18. MOSFET: Output characteristics: drain current
as a function of drain-source voltage;
typical values
006aac616
1.0
Fig 19. MOSFET: Sub-threshold drain current as a
function of gate-source voltage
03an96
2.5
ID
(A)
RDSon
(Ω)
0.8
(1)
0.6
2
(2)
25 °C
Tj = 150 °C
1.5
(3)
(4)
0.4
1
(5)
0.2
0.5
0.0
0.0
0
0.5
1.0
1.5
2.0
ID (A)
0
2.5
Tj = 25 °C
1
2
3
VGS (V)
4
VDS > ID × RDSon
(1) VGS = 1.8 V
(2) VGS = 2.0 V
(3) VGS = 2.5 V
(4) VGS = 3.0 V
(5) VGS = 4.5 V
Fig 20. MOSFET: Drain-source on-state resistance as
a function of drain current; typical values
PBSM5240PF
Product data sheet
Fig 21. MOSFET: Transfer characteristics: drain
current as a function of gate-source voltage;
typical values
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
006aac618
1.8
03aj65
1.2
VGS(th)
(V)
a
0.9
max
1.2
typ
0.6
min
0.6
0.3
0.0
–60
0
60
120
Tj (°C)
180
0
−60
0
60
120
180
Tj (°C)
ID = 1 mA; VDS = VGS
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 22. MOSFET: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
03an98
102
Fig 23. MOSFET: Gate-source threshold voltage as a
function of junction temperature
03an99
5
ID = 1 A
Tj = 25 °C
VDS = 15 V
VGS
(V)
C
(pF)
Ciss
4
3
10
Coss
2
Crss
1
1
10-1
1
10
VDS (V)
102
0
0
0.2
0.4
0.6
0.8
1
QG (nC)
f = 1 MHz; VGS = 0 V
Fig 24. MOSFET: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
PBSM5240PF
Product data sheet
Fig 25. MOSFET: Gate-source voltage as a function of
gate charge; typical values
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03an97
1
VGS = 0 V
IS
(A)
0.8
VDS
ID
0.6
VGS(pl)
0.4
VGS(th)
VGS
0.2
QGS1
150 °C
QGS2
QGS
QGD
QG(tot)
Tj = 25 °C
0
0
0.2
0.4
0.6
0.8
1
VSD (V)
017aaa137
Fig 26. MOSFET: Gate charge waveform definitions
Fig 27. MOSFET: Source current as a function of
source-drain voltage; typical values
8. Package outline
0.65
max
2.1
1.9
0.04
max
1.1
0.9
2.1
1.9
0.77
0.57
(2×)
0.54
0.44
(2×)
3
4
1
6
0.65
(4×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig 28. Package outline SOT1118
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
PBSM5240PF SOT1118
[1]
PBSM5240PF
Product data sheet
4 mm pitch, 8 mm tape and reel
-115
For further information and the availability of packing methods, see Section 13.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
solder paste
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
sot1118_fr
Reflow soldering is the only recommended soldering method.
Fig 29. Reflow soldering footprint SOT1118
PBSM5240PF
Product data sheet
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© NXP B.V. 2011. All rights reserved.
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11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSM5240PF v.2
20110420
Product data sheet
-
PBSM5240PF v.1
Modifications:
PBSM5240PF v.1
PBSM5240PF
Product data sheet
•
•
•
•
•
Section 1.1 “General description”: updated.
Section 2 “Pinning information”: updated.
Table 1, 5, 6, 7 and 8: updated according to the last measurements.
Figure 1 to 27: added.
Section 12 “Legal information”: updated.
20100825
Preliminary data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
-
© NXP B.V. 2011. All rights reserved.
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12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
PBSM5240PF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
18 of 20
PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSM5240PF
Product data sheet
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Rev. 2 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
19 of 20
PBSM5240PF
NXP Semiconductors
40 V, 2 A PNP BISS/Trench MOSFET module
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Packing information . . . . . . . . . . . . . . . . . . . . 15
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 April 2011
Document identifier: PBSM5240PF