Data Sheet

PMZ1000UN
N-channel TrenchMOS standard level FET
Rev. 2 — 17 September 2010
Product data sheet
BOTTOM VIEW
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Fast switching
„ Low conduction losses due to low
on-state resistance
„ Saves PCB space due to small footprint
(90 % smaller than SOT23)
„ Suitable for use in compact designs due
to low profile (55 % lower than SOT23)
1.3 Applications
„ Driver circuits
„ Switching in portable appliances
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
-
30
V
ID
drain current
Tamb = 25 °C; VGS = 10 V;
see Figure 1
-
-
480
mA
Ptot
total power dissipation
Tamb = 25 °C; see Figure 2
-
-
350
mW
VGS = 4.5 V; ID = 0.2 A;
Tj = 25 °C; see Figure 8
-
-
1
Ω
Static characteristics
RDSon
drain-source on-state
resistance
PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
Simplified outline
1
G
gate
2
S
source
1
3
D
drain
2
Graphic symbol
D
3
G
Transparent
top view
mbb076
SOT883 (SC-101)
S
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
PMZ1000UN
SC-101
leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883
Version
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMZ1000UN
6N
5. Limiting values
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
30
V
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
30
V
VGS
gate-source voltage
−8
+8
V
ID
drain current
Tamb = 25 °C; VGS = 10 V; see Figure 1
-
480
mA
IDM
peak drain current
Tamb = 25 °C; tp ≤ 10 μs; pulsed
-
1.8
A
Ptot
total power dissipation
Tamb = 25 °C; see Figure 2
-
350
mW
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−55
+150
°C
PMZ1000UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Tamb = 25 °C
-
480
mA
HBM; C = 100 pF; R = 1.5 kΩ
-
60
V
MM; C = 200 pF
-
30
V
Source-drain diode
source current
IS
Electrostatic discharge
electrostatic discharge voltage
VESD
03aa25
120
Ider
(%)
03aa17
120
Pder
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
Tsp (°C)
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
Normalized continuous drain current as a
function of solder point temperature
PMZ1000UN
Product data sheet
200
Tsp (°C)
ID
I der = -------------------- × 100 %
I D ( 25°C )
Fig 1.
150
Fig 2.
Normalized total power dissipation as a
function of solder point temperature
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Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance from
junction to solder point
see Figure 3
-
-
50
K/W
Rth(j-a)
thermal resistance from
junction to ambient
-
-
355
K/W
[1]
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
003aab831
102
Zth(j-sp)
(K/W)
δ = 0.5
0.2
10
0.1
0.05
δ=
P
0.02
single pulse
tp
T
t
tp
T
1
10-4
Fig 3.
10-3
10-2
10-1
1
tp (s)
10
Transient thermal impedance from junction to solder point as a function of pulse duration
PMZ1000UN
Product data sheet
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Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
30
-
-
V
Tj = −55 °C
27
-
-
V
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
ID = 10 μA; VGS = 0 V
ID = 0.25 mA; VDS = VGS; see Figure 6 and 7
Tj = 25 °C
0.45
0.7
0.95
V
Tj = 150 °C
0.25
-
-
V
Tj = −55 °C
-
-
1.15
V
VDS = 30 V; VGS = 0 V
Tj = 25 °C
-
-
1
μA
Tj = 150 °C
-
-
100
μA
-
10
100
nA
IGSS
gate leakage current
VGS = ±8 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 0.2 A; see Figure 8
Tj = 25 °C
-
-
1
Ω
Tj = 150 °C
-
-
1.5
Ω
VGS = 2.5 V; ID = 0.1 A; Figure 8
-
-
1.1
Ω
VGS = 1.8 V; ID = 0.075 A; Figure 8
-
-
1.4
Ω
ID = 1 A; VDS = 15 V; VGS = 4.5 V;
see Figure 9 and 10
-
0.89
-
nC
-
0.1
-
nC
-
0.2
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
VDS = 25 V; VGS = 0 V; f = 1 MHz;
see Figure 11
VDS = 15 V; RL = 15 Ω; VGS = 10 V;
RG(ext) = 6 Ω
-
43
-
pF
-
7.7
-
pF
-
4.8
-
pF
-
4
-
ns
-
7.5
-
ns
-
18
-
ns
-
4.5
-
ns
-
0.76
1.2
V
Source-drain diode
VSD
source-drain voltage
PMZ1000UN
Product data sheet
IS = 0.3 A; VGS = 0 V; see Figure 11
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Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03an94
2.5
4.5
ID
(A)
3
03an96
2.5
2.5
ID
(A)
2
2
Tj = 150 °C
25 °C
2
1.5
1.5
1.8
1
1
VGS (V) = 1.5
0.5
0.5
0
0
0
0.5
1
1.5
VDS (V)
2
0
Tj = 25 °C
Fig 4.
1
2
3
VGS (V)
4
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Output characteristics: drain current as a
function of drain-source voltage; typical
values
03aj65
1.2
VGS(th)
(V)
Fig 5.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03am43
10−3
ID
(A)
0.9
max
10−4
min
typ
max
typ
0.6
10−5
min
0.3
0
−60
0
60
120
180
10−6
0
Tj (°C)
Product data sheet
1.2
Tj = 25 °C; VDS = 5 V
Gate-source threshold voltage as a function of
junction temperature
PMZ1000UN
0.8
VGS (V)
ID = 1 mA; VDS = VGS
Fig 6.
0.4
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
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Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03al00
1.8
03an99
5
ID = 1 A
Tj = 25 °C
VDS = 15 V
VGS
(V)
a
4
1.2
3
2
0.6
1
0
−60
0
0
60
120
0
180
0.4
0.6
0.8
1
QG (nC)
ID = 1 A; VDS = 15 V
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 8.
0.2
Tj (°C)
Normalized drain-source on-state resistance
as a function of junction temperature
Fig 9.
Gate-source voltage as a function of gate
charge; typical values
03an98
102
C
(pF)
VDS
Ciss
ID
10
VGS(pl)
Coss
VGS(th)
Crss
VGS
QGS1
QGS2
QGS
QGD
QG(tot)
1
10-1
1
003aaa508
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 10. Gate charge waveform definitions
PMZ1000UN
Product data sheet
Fig 11. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
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Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03an97
1
VGS = 0 V
IS
(A)
0.8
0.6
0.4
0.2
150 °C
Tj = 25 °C
0
0
0.2
0.4
0.6
0.8
1
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 12. Source current as a function of source-drain voltage; typical values
PMZ1000UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT883
JEITA
SC-101
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
Fig 13. Package outline SO883 (SC-101)
PMZ1000UN
Product data sheet
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Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Soldering
1.3
0.7
R0.05 (12×)
solder lands
solder resist
0.9
0.6
0.7
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.3
0.4
(2×)
0.4
Dimensions in mm
sot883_fr
Fig 14. Reflow soldering footprint SOT883 (SC-101)
PMZ1000UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMZ1000UN v.2
20100917
Product data sheet
-
PMZ1000UN_1
-
-
Modifications:
PMZ1000UN_1
PMZ1000UN
Product data sheet
•
•
Modifications of thermal parameters
Section 11 “Legal information”: updated
20100224
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
PMZ1000UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
12 of 14
PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMZ1000UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
13 of 14
PMZ1000UN
NXP Semiconductors
N-channel TrenchMOS standard level FET
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 September 2010
Document identifier: PMZ1000UN