DCR4500A42 Phase Control Thyristor DS5942-4 April 2013 (LN30255) KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR4500A42* DCR4500A40 DCR4500A36 Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3600 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. o o *4100V @ -40 C, 4200V @ 0 C Outline type code: A (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR4500A42 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 4500 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 7068 A Continuous (direct) on-state current - 6330 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 60.8 kA VR = 0 18.48 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.00603 °C/W Single side cooled Anode DC - 0.01024 °C/W Cathode DC - 0.01467 °C/W Double side - 0.001 °C/W - 0.002 °C/W - 125 °C Clamping force 83.0kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 74.0 91.0 kN 2/10 www.dynexsemi.com DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 2000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 200 A/µs Gate source 30V, 10, Non-repetitive - 500 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 500 to 2200A at Tcase = 125°C - 0.75 V Threshold voltage – High level 2200 to 8000A at Tcase = 125°C - 0.92 V On-state slope resistance – Low level 500A to 2200A at Tcase = 125°C - 0.205 m On-state slope resistance – High level 2200A to 8000A at Tcase = 125°C - 0.122 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 900 µs 2920 4875 µC 42 57 A Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time IT = 5000A, Tj = 125°C, VR = 200V, dI/dt = 5A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 3000A, Tj = 125°C, dI/dt – 1A/µs, VRpeak ~2500V, VR ~ 1700V IRR Reverse recovery current IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 400 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES 9000 Vtm max 125ºC Vtm min 125ºC Vtm max 25ºC Vtm min 25ºC Instantaneous on-state currentFI - (A) 8000 7000 6000 5000 4000 3000 2000 1000 0 0.5 1 1.5 2 Instantaneous on-state voltage V T - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = -0.208640 B = 0.171688 C = 0.000113 D = -0.003842 these values are valid for Tj = 125°C for IT 500A to 8000A 4/10 www.dynexsemi.com 130 180 120 90 60 30 8 180 120 90 60 30 120 Maximum case temperature, Tcase ( o C ) Mean power dissipation - (kW) 10 6 4 2 110 100 90 80 70 60 50 40 30 20 10 0 0 0 500 1000 1500 Mean on-state current, IT(AV) - (A) 0 2000 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 16 180 120 90 60 30 100 d.c. 180 120 90 60 30 14 Mean power dissipation - (kW) Maximum heatsink temperature, HTeatsink - ( ° C) 125 75 50 12 10 8 6 4 25 2 0 0 0 0 1000 2000 3000 4000 5000 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR 125 T -(o C) Maximum heatsink temperature heatsink T -(° C) Maximum permissible case temperature ,case 125 100 75 50 d.c. 180 120 90 60 30 25 0 100 75 50 d.c. 180 120 90 60 30 25 0 0 1000 2000 3000 4000 5000 0 Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 5000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double side cooled Anode side cooled Cathode side cooled Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) 1 3.01541 2 3 4 1.048955 0.983519 0.983519 0.703874 1.904794 0.059 0.059 3.156003 4.092806 1.556555 1.623962 2.69023 13.79162 0.059 0.205916 7.077369 3.483481 1.745839 2.634274 6.648601 8.436484 1.762119 0.08069 i 4 Zth [Ri (1 exp(T / Ti )] i 1 Rth(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Double side cooling Zth (z) ° sine. rect. 180 0.44 0.31 120 0.49 0.43 90 0.55 0.49 60 0.60 0.55 30 0.64 0.61 15 0.66 0.64 Anode Side Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.61 0.58 15 0.62 0.61 Cathode Sided Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.60 0.58 15 0.62 0.60 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com 200 30 180 27 100 10 Conditions: Tcase = 125°C VR =0 Pulse width = 10ms 24 2 It 140 120 18 100 15 80 12 ITSM 60 9 Conditions: Tcase= 125°C VR = 0 half-sine wave 40 20 1 21 6 3 0 1 10 1 100 I2t (MA2s) Surge current, TI SM - (kA) Surge current, ITSM- (kA) 160 0 100 10 Pulse width, tP - (ms) Number of cycles Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 25000 700 Qs max = 4874.7*(di/dt) 0.4822 IRR max = 57.242*(di/dt)0.7466 600 I - (A) Reverse recovery current,RR Stored charge, Qs - (uC) 20000 15000 10000 Qs min = 2920.8*(di/dt) 0.581 Conditions: Tj = 125ºC, VR peak ~ 2500V VRM ~ 1700V snubber as required to control reverse voltage 5000 500 400 300 IRR min = 41.99*(di/dt)0.7893 Conditions: Tj = 125ºC, VR peak ~ 2500V VRM ~ 1700V snubber as required to control reverse voltage 200 100 0 0 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 30 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Lead length: 420mm Lead terminal connector: M4 ring Weight: 2.6kg Package outline type code: A Fig.16 Package outline 9/10 www.dynexsemi.com DCR4500A42 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 10/10 www.dynexsemi.com