ZXMN15A27K

A Product Line of
Diodes Incorporated
ZXMN15A27K
150V N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Product Summary
V(BR)DSS
150V
Features and Benefits
ID
RDS(on)
TA = 25°C
650mΩ @ VGS = 10V
2.6A
•
100% Unclamped Inductive Switch (UIS) test in production
•
High avalanche energy pulse withstand capability
•
Low input capacitance
•
Low on-resistance
•
Fast switching speed
•
"Green" component and RoHS Compliant (Note 1)
•
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET features low on-state resistance, fast switching and
high avalanche withstand capability, making it ideal for high efficiency
power management applications.
Mechanical Data
•
Case: TO252-3L
•
Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
•
SLIC line drivers for VoIP applications
•
Transformer Driving Switch
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Power management functions
•
Terminal Connections: See Diagram
•
Motor control
•
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Uninterrupted power supply
•
Weight: 0.33 grams (approximate)
D
D
TO252-3L
G
D
G
Top View
S
S
Pin Out – Top View
Equivalent Circuit
Ordering Information (Note 1)
Product
ZXMN15A27KTC
Notes:
Marking
See Below
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
15A27
YYWW
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
ZXMN = Product Type Marking Code, Line 1
15A27 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Last two digits of year (ex: 09 = 2009)
WW = Week (01-52)
1 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN15A27K
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Current
(Note 7)
(Note 7)
(Note 4)
(Note 4)
(Note 3)
Continuous Drain current
VGS = 10V TA = 70°C (Note 3)
(Note 2)
Pulsed Drain current
VGS = 10V (Note 4)
Continuous Source current (Body diode)
(Note 2)
Pulsed Source current (Body diode)
(Note 4)
Symbol
VDSS
VGS
EAS
IAS
EAR
IAR
Value
150
±25
55
4.3
3.0
4.3
2.55
2.0
1.7
17.2
5.2
17.2
Unit
V
V
mJ
A
mJ
A
Value
4.2
33.6
Unit
PD
9.5
76.0
W
mW/°C
RθJA
2.2
17.2
30.2
13.1
58.1
2.06
-55 to 150
°C/W
ID
IDM
IS
ISM
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
(Note 2)
Power dissipation
Linear derating factor
(Note 3)
(Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 2)
(Note 3)
(Note 6)
(Note 5)
RθJL
TJ, TSTG
°C/W
°C
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. The device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature.
5. Thermal resistance from junction to solder-point at the end of the drain lead.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition..
7. UIS in production with L = 5.95mH, IAS = 4.3A, RG = 25Ω, VDD = 100V, starting TJ = 25°C.
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
2 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN15A27K
Thermal Characteristics
10
RDS(on)
Limited
ID Drain Current (A)
ID Drain Current (A)
10
1
DC
100m
1s
1m
Limited
1
DC
100m
100ms
10m
RDS(on)
10ms
T amb=25°C
1ms
25mm x 25mm
1oz FR4
100µs
1
10
1s
100ms
10ms
10m
1m
100
T amb=25°C
10
Safe Operating Area
35
T amb=25°C
25mm x 25mm
1oz FR4
40
D=0.5
20
D=0.1
D=0.2
D=0.05
10
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
60
Transient Thermal Impedance
Single Pulse
T amb=25°C
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
T amb=25°C
30
50mm x 50mm
2oz FR4
25
20
D=0.5
15
10
D=0.05
5
Single Pulse
0
100µ
Document Number DS31978 Rev. 2 - 2
1m
10m 100m
1
10
100
1k
Pulse Width (s)
1k
4
50mm x 50mm
2oz FR4
3
25mm x 25mm
1oz FR4
2
1
0
0
Pulse Power Dissipation
ZXMN15A27K
D=0.1
D=0.2
Transient Thermal Impedance
Max Power Dissipation (W)
Max Power Dissipation (W)
100
VDS Drain-Source Voltage (V)
Safe Operating Area
30
100µs
1
VDS Drain-Source Voltage (V)
50
1ms
50mm x 50mm
2oz FR4
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
3 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN15A27K
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
150
⎯
⎯
V
ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
500
nA
VDS = 150V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±25V, VDS = 0V
VGS(th)
2
2.7
4
V
ID = 250μA, VDS = VGS
RDS (ON)
⎯
0.500
0.650
Ω
VGS = 10V, ID = 2.15A
Forward Transconductance (Notes 8 & 9)
gfs
⎯
2.8
⎯
S
VDS = 40V, ID = 2.15A
Diode Forward Voltage (Note 8)
VSD
⎯
0.880
0.950
V
IS = 4.3A, VGS = 0V
Reverse recovery time (Note 9)
trr
⎯
153
⎯
ns
Reverse recovery charge (Note 9)
Qrr
⎯
1.1
⎯
μC
IS = 5.4A, VGS = 0V,
di/dt = 100A/μs
Input Capacitance
Ciss
⎯
169
⎯
pF
Output Capacitance
Coss
⎯
64.5
⎯
pF
Reverse Transfer Capacitance
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Crss
⎯
23.3
⎯
pF
Total Gate Charge
Qg
⎯
6.6
⎯
nC
Gate-Source Charge
Qgs
⎯
1.0
⎯
nC
Gate-Drain Charge
Qgd
⎯
3.4
⎯
nC
Turn-On Delay Time (Note 10)
tD(on)
⎯
3.3
⎯
ns
Turn-On Rise Time (Note 10)
tr
⎯
12.7
⎯
ns
Turn-Off Delay Time (Note 10)
tD(off)
⎯
17.1
⎯
ns
tf
⎯
13.3
⎯
ns
Turn-Off Fall Time (Note 10)
Notes:
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 120V, VGS = 10V
ID = 5.4A
VDD = 75V, VGS = 10V
ID = 5.4A, RG ≅ 25Ω
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
4 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN15A27K
Typical Characteristics
4V
1
3.5V
VGS
0.1
1
10
3V
VGS
1
10
Output Characteristics
T = 25°C
VDS = 15V
0.1
4
5
6
7
8
2.4
2.2
2.0 VGS(th)
1.8 ID = 250uA
1.6 VGS = VDS
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
VGS Gate-Source Voltage (V)
RDS(on)
VGS = 10V
ID = 2.15A
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
10
2.5
VGS
4.5V
5V
5.5V
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
4V
3.5V
Output Characteristics
3
5.5V
1
VDS Drain-Source Voltage (V)
T = -55°C
6V
2.0
6.5V
1.5
10V
1.0
20V
0.5
T = 25°C
0.0
6V
5V
4.5V
0.1
T = 150°C
2
7V
VDS Drain-Source Voltage (V)
10
1
10V
T = 150°C
0.1
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
10
5.5V
5V
4.5V
0.1
ID Drain Current (A)
6V
ID Drain Current (A)
8V
T = 25°C
10
0
2
4
6
8
10
12
1
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
T = 25°C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
ID Drain Current (A)
On-Resistance v Drain Current
T = 150°C
Source-Drain Diode Forward Voltage
5 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN15A27K
VGS = 0V
C Capacitance (pF)
400
f = 1MHz
CISS
300
COSS
200
100
CRSS
0
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
Typical Characteristics - continued
10
VDS = 30V
8
VDS = 75V
VDS = 120V
6
4
2
ID = 5.4A
0
0
1
2
3
4
5
6
7
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
Switching time test circuit
6 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN15A27K
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Max
Min
Max
A
0.086
0.094
2.18
2.39
e
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1
0.205
-
5.21
-
θ1°
0°
10°
0°
10°
E
0.250
0.265
6.35
6.73
θ°
0°
15°
0°
15°
E1
0.170
-
4.32
-
-
-
-
-
-
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
Min
Millimeters
Min
7 of 8
www.diodes.com
Max
Min
0.090 BSC
Max
2.29 BSC
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN15A27K
Suggested Pad Layout
6.2
0.244
3.0
0.118
5.8
0.228
1.6
0.063
2.58
0.101
6.17
0.243
mm
inches
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
8 of 8
www.diodes.com
October 2009
© Diodes Incorporated