ZXMN6A08K

A Product Line of
Diodes Incorporated
ZXMN6A08K
60V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
V(BR)DSS
Features and Benefits
RDS(on)
ID
TA = 25°C
80mΩ @ VGS= 10V
7.90A
150mΩ @ VGS= 4.5V
5.75A
•
Low on-resistance
•
Fast switching speed
•
“Green” component and RoHS compliant (Note 1)
60V
Mechanical Data
•
Case: TO-252
Description and Applications
•
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.33 grams (approximate)
•
Backlighting
•
DC-DC Converters
•
Power management functions
D
D
G
D
G
TOP VIEW
Ordering Information
Product
ZXMN6A08KTC
Note:
S
S
PIN OUT -TOP VIEW
Equivalent Circuit
(Note 1)
Marking
See Below
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
6A08
YYWW
ZXMN6A08K
Document Revision: 2
ZXMN = Product Type Marking Code, Line 1
6A08 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
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A Product Line of
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ZXMN6A08K
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
TA=70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
ID
IDM
IS
ISM
Value
60
±20
7.90
6.30
5.36
24.3
9.0
24.3
Unit
V
V
Value
4.13
33.0
8.94
71.5
2.12
16.9
30.3
14.0
59.1
2.77
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Note 2)
Power dissipation
Linear derating factor
(Note 3)
PD
(Note 5)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 2)
(Note 3)
(Note 5)
(Note 6)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A08K
Document Revision: 2
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A Product Line of
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ZXMN6A08K
Thermal Characteristics
RDS(on)
ID Drain Current (A)
ID Drain Current (A)
RDS(on)
10 Limit
1
DC
1s
100ms
100m
10m
1ms
25mm x 25mm
1oz FR4
100µs
1
1
DC
100ms
10ms
T amb=25°C
10m
10
100µs
1
10
VDS Drain-Source Voltage (V)
Safe Operating Area
Safe Operating Area
35
T amb=25°C
50
25mm x 25mm
1oz FR4
40
D=0.5
30
D=0.1
D=0.2
D=0.05
10
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
60
Thermal Resistance (°C/W)
1ms
50mm x 50mm
2oz FR4
VDS Drain-Source Voltage (V)
20
1s
100m
10ms
T amb=25°C
10 Limit
Transient Thermal Impedance
Tamb=25°C
30
50mm x 50mm
2oz FR4
25
20
D=0.5
15
10
D=0.1
D=0.2
D=0.05
5
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Max Power Dissipation (W)
4.5
Single Pulse
T amb=25°C
4.0
50mm x 50mm
2oz FR4
3.5
3.0
25mm x 25mm
1oz FR4
2.5
2.0
1.5
1.0
0.5
0.0
0
Pulse Power Dissipation
ZXMN6A08K
Document Revision: 2
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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ZXMN6A08K
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60
⎯
⎯
V
ID = 250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
0.5
μA
VDS= 60V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
VGS(th)
1.0
⎯
3.0
V
ID= 250μA, VDS= VGS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS= 10V, ID= 4.8A
RDS (ON)
⎯
Forward Transconductance (Notes 7 & 8)
gfs
⎯
6.6
⎯
S
VDS= 15V, ID= 4.8A
Diode Forward Voltage (Note 7)
VSD
⎯
0.88
0.95
V
IS= 4.0A, VGS= 0V
Reverse recovery time (Note 8)
trr
19.2
⎯
ns
Reverse recovery charge (Note 8)
Qrr
⎯
30.3
⎯
nC
Input Capacitance
Ciss
⎯
459
⎯
pF
Output Capacitance
Coss
⎯
44.2
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
24.1
⎯
pF
Total Gate Charge
Qg
⎯
3.8
⎯
nC
Total Gate Charge
Qg
⎯
5.8
⎯
nC
Gate-Source Charge
Qgs
⎯
1.4
⎯
nC
Gate-Drain Charge
Qgd
⎯
1.9
⎯
nC
Turn-On Delay Time (Note 9)
tD(on)
⎯
2.6
⎯
ns
Turn-On Rise Time (Note 9)
tr
⎯
2.1
⎯
ns
tD(off)
⎯
12.3
⎯
ns
tf
⎯
4.6
⎯
ns
Static Drain-Source On-Resistance (Note 7)
⎯
0.080
0.150
Ω
VGS= 4.5V, ID= 4.2A
IS= 1.4A, di/dt= 100A/μs
DYNAMIC CHARACTERISTICS (Note 8)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
VDS= 40V, VGS= 0V
f= 1MHz
VGS= 4.5V
VGS= 10V
VDS= 30V
ID= 1.4A
VDD= 30V, VGS= 10V
ID= 1.5A, RG ≅ 6.0Ω
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
ZXMN6A08K
Document Revision: 2
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ZXMN6A08K
Typical Characteristics
10V
T = 25°C
5V
10
4.5V
4V
3.5V
1
3V
VGS
0.1
0.1
1
ID Drain Current (A)
ID Drain Current (A)
10
1
2.5V
2V
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
1
T = 25°C
0.1
VDS = 10V
0.01
5
VGS Gate-Source Voltage (V)
VGS
5V
7V
10V
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
ZXMN6A08K
Document Revision: 2
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
1
0.1
ID = 4.8A
RDS(on)
VGS(th)
VGS = VDS
ID = 250uA
0
50
100
150
Normalised Curves v Temperature
4.5V
T = 25°C
VGS = 10V
Tj Junction Temperature (°C)
Typical Transfer Characteristics
4V
10
Output Characteristics
T = 150°C
3.5V
1
VDS Drain-Source Voltage (V)
10
3V
VGS
0.01
Output Characteristics
4
3V
0.1
10
3
5V
4V
3.5V
VDS Drain-Source Voltage (V)
2
10V
T = 150°C
10
T = 150°C
1
0.1
0.01
0.2
T = 25°C
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
VGS Gate-Source Voltage (V)
C Capacitance (pF)
10
600
VGS = 0V
400
f = 1MHz
CISS
COSS
CRSS
200
0
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ID = 1.4A
8
6
VDS = 15V
4
2
0
0
1
2
3
4
5
6
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
ZXMN6A08K
Document Revision: 2
Switching time test circuit
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ZXMN6A08K
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Min
Max
Min
Max
A
0.086
0.094
2.18
2.39
e
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1
0.205
-
5.21
-
θ1°
0°
10°
0°
10°
E
0.250
0.265
6.35
6.73
θ°
0°
15°
0°
15°
E1
0.170
-
4.32
-
-
-
-
-
-
ZXMN6A08K
Document Revision: 2
Min
Millimeters
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Max
Min
0.090 BSC
Max
2.29 BSC
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A08K
Suggested Pad Layout
6.2
0.244
3.0
0.118
5.8
0.228
1.6
0.063
2.58
0.101
6.17
0.243
mm
inches
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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Document Revision: 2
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