MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series Vishay Semiconductors New Product formerly General Semiconductor High-Voltage Dual Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 30A Maximum TJ 175°C ITO-220AB (MBRF30H90CT, MBRF30H100CT) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54) TO-220AB (MBR30H90CT, MBR30H100CT) 0.140 (3.56) DIA. 0.130 (3.30) 0.185 (4.70) 0.415 (10.54) MAX. 0.175 (4.44) 0.131 (3.39) DIA. 0.122 (3.08) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.055 (1.39) 0.045 (1.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 3 3 2 1 0.603 (15.32) 0.573 (14.55) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) PIN 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) 0.676 (17.2) 0.646 (16.4) 0.600 (15.5) 0.580 (14.5) PIN 1 0.110 (2.79) 0.100 (2.54) PIN 1 PIN 2 PIN 3 CASE 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) PIN 2 PIN 3 0.037 (0.94) 0.027 (0.69) 0.105 (2.67) 0.095 (2.41) 0.022 (0.55) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.095 (2.41) 0.110 (2.80) 0.100 (2.54) 0.060 (1.52) 0.022 (0.56) 0.014 (0.36) TO-263AB (MBRB30H90CT, MBRB30H100CT) 0.205 (5.20) 0.195 (4.95) 0.411 (10.45) 0.190 (4.83) 0.380 (9.65) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.245 (6.22) MIN Mounting Pad Layout TO-263AB K 0.42 (10.66) 0.055 (1.40) 0.360 (9.14) 0.33 (8.38) 0.047 (1.19) 0.320 (8.13) 0.624 (15.85) 1 K 2 0.591 (15.00) 0.63 (17.02) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) 0.095 (2.41) 0.021 (0.53) PIN 1 0.014 (0.36) PIN 2 0.205 (5.20) K - HEATSINK 0.140 (3.56) 0.110 (2.79) 0.195 (4.95) Features Mechanical Data • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08oz., 2.24g Document Number 88791 11-Jul-03 www.vishay.com 1 MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol MBR30H90CT MBR30H100CT Unit Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current Total device (see fig. 1) Per leg IF(AV) 30 15 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) per leg IFSM 275 A Peak repetitive reverse current per leg at tp = 2µs, 1KHZ IRRM 1.0 A Voltage rate of change (rated VR) dv/dt 10,000 V/µs TJ, TSTG –65 to +175 °C Operating junction and storage temperature range (1) 4500 3500 (2) 1500 (3) V Symbol Value Unit 25°C 125°C 25°C 125°C VF 0.82 0.67 0.93 0.80 V TJ = 25°C TJ = 125°C IR 5.0 6.0 µA mA RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1 second, RH ≤ 30% Electrical Characteristics (T C = 25°C unless otherwise noted) Parameter Maximum instantaneous forward voltage per leg(4) at at at at IF = IF = IF = IF = 15A, TJ = 15A, TJ = 30A, TJ = 30A, TJ = Maximum reverse current per leg at working peak reverse voltage(4) Thermal Characteristics (T C VISOL = 25°C unless otherwise noted) Parameter Typical thermal resistance per leg Symbol MBR MBRF MBRB RθJC 1.9 4.6 1.9 Unit C/W O Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300µs pulse width, 1% duty cycle Ordering Information Product Case Package Code MBR30H90CT - MBR30H100CT TO-220AB 45 Anti-Static tube, 50/tube, 2K/carton MBRF30H90CT - MBRF30H100CT ITO-220AB 45 Anti-Static tube, 50/tube, 2K/carton MBRB30H90CT - MBRB30H100CT TO-263AB 31 45 81 13” reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13” reel, 800/reel, 4.8K/carton www.vishay.com 2 Package Option Document Number 88791 11-Jul-03 MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Derating Curve Per Leg Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Per Leg 35 Peak Forward Surge Current (A) 300 Average Forward Current (A) 30 25 20 MBRF30H90CT - MBRF30H100CT 15 MBR30H90CT - MBR30H100CT MBRB30H90CT - MBRB30H100CT 10 5 200 150 100 50 0 0 25 50 75 100 125 150 1 175 10 100 Case Temperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Per Leg Fig. 4 – Typical Reverse Characteristics Per Leg 100 10000 TJ = 175°C 1000 TJ = 175°C 10 IR -- Instantaneous Reverse Current (µA) IF -- Instantaneous Forward Current (A) 0 150°C 125°C 1.0 100°C 25°C 0.1 150°C 125°C 100 100°C 10 1 25°C 0.1 0.01 0.0 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Per Leg Fig. 6 – Typical Transient Thermal Impedance 100 Transient Thermal Impedance (°C/W ) 10000 Junction Capacitance (pF) Tj = Tj max 8.3ms Single Half-Wave (JEDEC Method) 250 1000 100 10 0.1 1 10 Reverse Voltage (V) Document Number 88791 11-Jul-03 100 10 1 0.1 0.01 1 0.1 t, Pulse Duration (sec.) 10 www.vishay.com 3