BYV32, BYVF32 & BYVB32 Series Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Rectifiers Reverse Voltage 50 to 200V Forward Current 18A Reverse Recovery Time 25ns ITO-220AB (BYVF32 Series) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54) TO-220AB (BYV32 Series) 0.185 (4.70) 0.415 (10.54) MAX. 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.055 (1.39) 0.045 (1.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.676 (17.2) 0.646 (16.4) 0.600 (15.5) 0.580 (14.5) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) 1 PIN 2 3 3 2 1 0.603 (15.32) 0.573 (14.55) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) PIN 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 0.131 (3.39) DIA. 0.122 (3.08) 0.140 (3.56) DIA. 0.130 (3.30) 0.175 (4.44) 0.110 (2.80) 0.100 (2.54) 0.060 (1.52) PIN 1 0.110 (2.79) 0.100 (2.54) PIN 2 PIN 3 PIN 1 PIN 2 0.560 (14.22) 0.530 (13.46) CASE PIN 3 0.037 (0.94) 0.027 (0.69) 0.105 (2.67) 0.095 (2.41) 0.105 (2.67) 0.035 (0.90) 0.028 (0.70) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.022 (0.55) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-263AB (BYVB32 Series) Mounting Pad Layout TO-263AB 0.411 (10.45) 0.190 (4.83) 0.380 (9.65) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.245 (6.22) MIN 0.42 (10.66) K 0.33 (8.38) Dimensions in inches and (millimeters) 0.055 (1.40) 0.360 (9.14) 0.047 (1.19) 0.320 (8.13) 0.63 (17.02) 0.624 (15.85) 1 K 2 0.591 (15.00) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.037 (0.940) 0.08 (2.032) 0.027 (0.686) 0.24 (6.096) 0.12 (3.05) 0.105 (2.67) 0.095 (2.41) 0.021 (0.53) PIN 1 0.014 (0.36) PIN 2 0.205 (5.20) K - HEATSINK 0.140 (3.56) 0.110 (2.79) 0.195 (4.95) Features Mechanical Data • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive centertap • Glass passivated chip junctions • Low power loss • Low forward voltage, high current capability • High surge current capability • Superfast recovery times for high efficiency Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C, 0.16" (4.06mm) from case for 10 seconds Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g Document Number 88558 26-Mar-03 www.vishay.com 1 BYV32, BYVF32 & BYVB32 Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol BYV32-50 BYV32-100 BYV32-150 BYV32-200 Unit Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TC = 125°C IF(AV) 18 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) per leg IFSM 150 A TJ, TSTG –65 to +150 Operating junction and storage temperature range RMS Isolation voltage (BYVF type only) from terminals to heatsink with t = 1.0 second, RH ≤ 30% Electrical Characteristics (T C 4500 3500 1500 VISOL °C (1) (2) V (3) = 25°C unless otherwise noted) Parameter Symbol BYV32-50 BYV32-100 BYV32-150 BYV32-200 Unit (4) Maximum instantaneous forward voltage per leg at: at IF = 20A at IF = 5.0A, TJ = 100°C VF TJ = 25°C TJ = 100°C 1.15 0.85 V IR 10 600 µA Maximum reverse recovery time per leg at IF = 1A, VR = 30V, di/dt = 100A/µs, Irr = 10% IRM trr 25 ns Typical junction capacitance per leg at 4V, 1MHz CJ 45 pF Maximum DC reverse current per leg at rated DC blocking voltage Thermal Characteristics (T C = 25°C unless otherwise noted) Parameter Thermal resistance from junction to case per leg Symbol BYV BYVF BYVB Unit RΘJC 1.6 5.0 1.6 °C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9mm (0.19”) (4) Pulse test: 300µs pulse width, 1% duty cycle www.vishay.com 2 Document Number 88558 26-Mar-03 BYV32, BYVF32 & BYVB32 Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Maximum Non-Repetitive Peak Forward Surge Current Per Leg Forward Current Derating Curve 150 Resistive or Inductive Load 18 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 20 16 12 8.0 4.0 0 TJ = 150°C 10ms Single Half Sine-Wave (JEDEC Method) 125 100 75 50 25 0 0 25 50 75 100 125 150 1 Typical Instantaneous Forward Characteristics Per Leg Typical Reverse Leakage Characteristics Per Leg 1000 100 IR – Instantaneous Reverse Leakage Current (mA) IF – Instantaneous Forward Current (A) 100 10 Number of Cycles at 50 HZ Case Ambient Temperature (°C) TJ = 125°C 10 TJ = 25°C 1 0.1 Pulse Width = 300µs 1% Duty Cycle 0.01 0.1 TC = 100°C 100 10 1 TC = 25°C 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (V) Typical Junction Capacitance Per Leg pF – Junction Capacitance 60 TJ = 25°C f = 1.0 MHZ Vsig = 5mVp-p 50 40 30 20 10 0 1 10 100 Reverse Voltage (V) Document Number 88558 26-Mar-03 www.vishay.com 3