A Product Line of Diodes Incorporated DMP4051LK3 Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) 51mΩ @ VGS = -10V ID TA = 25°C -10.5A -40V 85mΩ @ VGS = -4.5V -8.4A • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case: TO252 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.33 grams (approximate) • Backlighting • DC-DC Converters • Power management functions D D TO252 G S D G Top View S Top View Pin-Out Equivalent Circuit Ordering Information (Notes 1 & 2) Product DMP4051LK3-13 DMP4051LK3Q-13 Notes: Grade Commercial Automotive Marking P4051L P4051L Reel size (inches) 13 13 Tape width (mm) 16 16 Quantity per reel 2,500 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. 2. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified. Marking Information YYWW P4051L DMP4051LK3 Document Number DS32114 Rev. 3 - 2 = Manufacturer’s Marking P4051L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 9 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) (Note 9) (Note 9) (Note 5) TA = 70°C (Note 5) (Note 4) (Note 6) (Note 5) (Note 5) Symbol VDSS VGS EAS IAS ID IDM IS ISM Value -40 ±20 50 20.3 -10.5 -8.40 -7.2 -28.9 -10.1 -28.9 Unit V V mJ A Value 4.18 33.4 8.9 71.4 2.14 17.1 29.9 14.0 58.4 2.46 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 4) Power dissipation Linear derating factor (Note 5) PD (Note 7) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 4) (Note 5) (Note 7) (Note 8) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 3. AEC-Q101 VGS maximum is ±16V. 4. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Same as note 4, except the device is measured at t ≤ 10 sec. 6. Same as note 4, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 9. UIS in production with L = 100µH, VDD = -40V. DMP4051LK3 Document Number DS32114 Rev. 3 - 2 2 of 9 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Thermal Characteristics RDS(on) Limited 1 -ID Drain Current (A) -ID Drain Current (A) 10 DC 1s 100ms 100m 10m 1ms 25mm x 25mm 1oz FR4 100m Limited 1 DC 100µs 1 10 10ms Tamb=25°C 100µs 0.1 1 10 -VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area 60 35 T amb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 1ms 50mm x 50mm 2oz FR4 10m -VDS Drain-Source Voltage (V) 20 1s 100ms 100m 10ms T amb=25°C RDS(on) 10 Transient Thermal Impedance T amb=25°C 30 50mm x 50mm 2oz FR4 25 20 D=0.5 15 10 D=0.1 D=0.2 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Max Power Dissipation (W) 4.5 Single Pulse T amb=25°C 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation DMP4051LK3 Document Number DS32114 Rev. 3 - 2 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 9 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.5 ±100 V μA nA ID = -250μA, VGS = 0V VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) ⎯ Forward Transconductance (Notes 10 & 11) Diode Forward Voltage (Note 10) Reverse recovery time (Note 11) Reverse recovery charge (Note 11) DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 12) Total Gate Charge (Note 12) Gate-Source Charge (Note 12) Gate-Drain Charge (Note 12) Turn-On Delay Time (Note 12) Turn-On Rise Time (Note 12) Turn-Off Delay Time (Note 12) Turn-Off Fall Time (Note 12) gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID = -250μA, VDS = VGS VGS = -10V, ID = -12A VGS = -4.5V, ID = -8A VDS = -15V, ID = -12A IS = -12A, VGS = 0V ⎯ -3.0 0.051 0.085 ⎯ -1.2 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 10) ⎯ 0.041 0.059 16.6 -0.98 138 841 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 674 115 67.7 7.0 14 2.2 3.7 2.3 14.1 25.1 14.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Notes: Ω Test Condition IS = -12A, di/dt = 100A/μs VDS = -20V, VGS = 0V f = 1MHz VGS = -4.5V VGS = -10V VDS = -20V ID = -12A VDD = -20V, VGS = -10V ID = -12A, RG ≅ 6.0Ω 10. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 11. For design aid only, not subject to production testing. 12. Switching characteristics are independent of operating junction temperatures. DMP4051LK3 Document Number DS32114 Rev. 3 - 2 4 of 9 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Typical Characteristics 10V 4V 3.5V -ID Drain Current (A) 10 3V 2.5V 1 0.1 -VGS 0.01 10 3.5V 3V 2.5V 1 2V 0.1 -VGS 1 10 0.1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics -VDS = 10V 1 T = 150°C T = 25°C 0.1 1.5 2.0 2.5 3.0 3.5 1.6 3.5V 4V 0.1 4.5V 10V 0.1 1 10 -ISD Reverse Drain Current (A) 3V 1 1.2 1.0 VGS(th) 0.8 On-Resistance v Drain Current Document Number DS32114 Rev. 3 - 2 VGS = VDS ID = -250uA 0.6 -50 0 50 100 150 10 1 T = 150°C T = 25°C 0.1 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) -ID Drain Current (A) DMP4051LK3 RDS(on) Normalised Curves v Temperature T = 25°C 2.5V ID = -12A Tj Junction Temperature (°C) Typical Transfer Characteristics -VGS VGS = -10V 1.4 -VGS Gate-Source Voltage (V) 0.01 0.01 1 -VDS Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) -ID Drain Current (A) 4V 10 0.01 0.1 RDS(on) Drain-Source On-Resistance (Ω) 10V T = 150°C -ID Drain Current (A) T = 25°C Source-Drain Diode Forward Voltage 5 of 9 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Typical Characteristics - continued 10 C Capacitance (pF) VGS = 0V f = 1MHz 800 600 CISS COSS CRSS 400 200 0 0.1 1 10 -VGS Gate-Source Voltage (V) 1000 8 6 4 0 DMP4051LK3 Document Number DS32114 Rev. 3 - 2 ID = -12A 0 2 4 6 8 10 12 14 Q - Charge (nC) -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VDS = -20V 2 Gate-Source Voltage v Gate Charge 6 of 9 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Gate charge test circuit Basic gate charge waveform VDS 90% RD VGS VDS RG VDD 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms DMP4051LK3 Document Number DS32114 Rev. 3 - 2 Pulse width ⬍ 1S Duty factor 0.1% td(on) 7 of 9 www.diodes.com Switching time test circuit February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Package Outline Dimensions E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout X2 Y2 C Y1 X1 DMP4051LK3 Document Number DS32114 Rev. 3 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 8 of 9 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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