Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 1/10 CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET MTP2317N3 BVDSS -20V ID @VGS=-4.5V RDSON@VGS=-4.5V, ID=-4.5A -5.8A 28mΩ(typ.) RDSON@VGS=-4.5V, ID=-3A 25mΩ(typ.) RDSON@VGS=-2.5V, ID=-2.5A 33mΩ(typ.) Features RDSON@VGS=-1.8V, ID=-2A 51mΩ(typ.) • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package RDSON@VGS=-1.8V, ID=-1.5A 48mΩ(typ.) RDSON@VGS=-1.5V, ID=-0.5A 61mΩ(typ.) RDSON@VGS=-1.35V, ID=-0.1A 60mΩ(typ.) Equivalent Circuit Outline MTP2317N3 SOT-23 D G S G：Gate S：Source D：Drain Ordering Information Device MTP2317N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTP2317N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note) TA=25°C, VGS=-4.5V TA=70°C, VGS=-4.5V Pulsed Drain Current Limits -20 ±12 -5.8 -4.6 -30 1.38 ID IDM Maximum Power Dissipation (Note) Ta=25℃ PD Ta=70℃ Operating Junction and Storage Temperature Range Unit V A W Tj ; Tstg 0.88 -55~+150 °C Symbol Limit Unit Rth,ja TL 90 (Note) 260 °C/W °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Lead Temperature, for 5 second soldering(1/8” from case) Note : Surface mounted on 1 in ²FR-4 board with 2 oz. copper, t≦5sec; 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS BVDSX VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss MTP2317N3 Min. Typ. Max. Unit -20 -15 -0.5 -0.5 - -0.7 -0.8 28 25 33 51 48 61 60 10.7 6.7 -1.0 -1.1 ±100 -1 35 32 43 66 62 88 100 - V V V V nA µA - 1916 159 132 - mΩ S pF Test Conditions VGS=0V, ID=-250µA VGS=5V, ID=-1mA VDS=VGS, ID=-250µA VDS=-3V, ID=-1mA VGS=±12V, VDS=0V VDS=-20V, VGS=0V VGS=-4.5V, ID=-4.5A VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-2A VGS=-1.8V, ID=-1.5A VGS=-1.5V, ID=-0.5A VGS=-1.35V, ID=-0.1A VDS=-5V, ID=-3A VDS=-3V, ID=-1A VDS=-10V, VGS=0V, f=1MHz CYStek Product Specification CYStech Electronics Corp. td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode IS ISM VSD trr* Qrr* - 12 18 54 35 15 3.2 3.9 - -0.72 21 10 -2 -8 -1.3 - Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 3/10 ns VDD=-10V, ID=-1A, RL=10Ω, VGEN=-4.5V, RG=6Ω nC VDS=-10V, ID=-4.5A, VGS=-4.5V A V ns nC VGS=0V, IS=-1A IF=-4.5A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% Recommended Soldering Footprint MTP2317N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 4/10 Typical Characteristics Typical Output Characteristics Typical Output Characteristics 30 25 5V, 4.5V, 4V, 3.5V, 3V, 2.5V, 2V -VGS=2.5V 20 8 -ID, Drain Current (A) -ID, Drain Current (A) 10 5V, 4.5V, 4V, 3.5V, 3V -VGS=2V 15 10 6 -VGS=1.5V 4 -VGS=1.5V -VGS=1V 2 5 -VGS=1V 0 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) 5 0 1 Brekdown Voltage vs Ambient Temperature 1000 ID=-250μA, VGS=0V RDS(on), Static Drain-Source On-State Resistance(mΩ) -BVDSS, Normalized Drain-Source Breakdown Voltage 5 Static Drain-Source On-State resistance vs Drain Current 1.4 1.2 1 0.8 0.6 -75 -50 -25 -VGS=1.5V -VGS=2.5V -VGS=4.5V 10 0.01 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS=1.8V 100 0.1 1 -ID, Drain Current(A) 10 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage Reverse Drain Current vs Source-Drain Voltage 1.2 400 VGS=0V 1 R DS(ON), Static Drain-Source OnState Resistance(mΩ) -VSD, Source-Drain Voltage(V) 2 3 4 -VDS, Drain-Source Voltage(V) Tj=25°C 0.8 Tj=150°C 0.6 0.4 360 ID=-4.5A -2.5A -0.5A -0.2A -0.1A 320 280 240 200 160 120 80 40 0.2 0 0 MTP2317N3 4 8 12 16 -IDR, Reverse Drain Current (A) 20 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 5/10 Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 10000 VGS=-1.5V, ID=-0.5A VGS=-1.8V, ID=-1.5A Ciss 80 VGS=-2.5V,ID=-2.5A Capacitance---(pF) R DS(ON), Static Drain-Source On-State Resistance (mΩ) Drain-Source On-State Resistance vs Junction Tempearture 60 40 1000 C oss 100 Crss 20 VGS=-4.5V, ID=-4.5A VGS=-4.5V, ID=-3A 0 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 0.1 1.6 50 1.4 1 0.8 0.6 -60 -40 -20 0 20 40 30 20 10 ID=-250μA 0.4 0 0.001 60 80 100 120 140 160 Tj, Junction Temperature(°C) 0.1 1 Pulse Width(s) Gate Charge Characteristics Maximum Safe Operating Area 5 0.01 10 100 100 4 -ID, Drain Current (A) -VGS, Gate-Source Voltage(V) TJ(MAX) =150°C TA=25°C RθJA=90°C/W 40 VDS=-3V, ID=-1mA 1.2 VDS=-10V ID=-4.5A 3 2 1 0 100μs 10 1ms 10ms 1 100ms TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=90°C/W Single Pulse 0.1 DC 0.01 0 MTP2317N3 100 Single Pulse Power Rating, Junction to Ambient (Note on page 2) Power (W) -VGS(th) , Normalized Threshold Voltage Threshold Voltage vs Junction Tempearture 1 10 -VDS, Drain-Source Voltage(V) 4 8 12 16 Qg, Total Gate Charge(nC) 20 0.01 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 6/10 Typical Characteristics(Cont.) Maximum Drain Current vs JunctionTemperature Typical Transfer Characteristics 10 -VDS=3V 9 6 8 5 -I D, Drain Current (A) -ID, Maximum Drain Current(A) 7 4 3 2 TA=25°C, VGS=-4.5V 1 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 0 2 Forward Transfer Admittance vs Drain Current Power Derating Curve 100 1.4 GFS , Forward Transfer Admittance(S) 1.6 PD, Power Dissipation(W) 0.5 1 1.5 -VGS, Gate-Source Voltage(V) Mounted on FR-4 board with 1 in² pad area 1.2 1 0.8 0.6 0.4 0.2 0 0 MTP2317N3 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 10 1 VDS=3V 0.1 Ta=25°C Pulsed 0.01 0.001 0.01 0.1 ID, Drain Current(A) 1 10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 7/10 Typical Characteristics(Cont.) Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=90 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTP2317N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 8/10 Reel Dimension Carrier Tape Dimension MTP2317N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 9/10 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP2317N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2015.01.29 Page No. : 10/10 SOT-23 Dimension Marking: A L 2317 3 B S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D H K Style: Pin 1.Gate 2.Source 3.Drain J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2317N3 CYStek Product Specification