IGW100N60H3 Data Sheet (2 MB, EN)

IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGW100N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
C
TRENCHSTOPTMtechnologyoffering
•verylowturn-offenergy
•lowVCEsat
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating,halogen-freemouldcompound,RoHS
compliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
1
Packagepindefinition:
2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
IGW100N60H3
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
600V
100A
1.85V
175°C
G100H603
PG-TO247-pin123
2
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
Maximumratings
Parameter
Symbol
Value
Unit
600
V
IC
140.0
120.0
A
ICpuls
300.0
A
TurnoffsafeoperatingareaVCE≤600V,Tvj≤175°C -
300.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
PowerdissipationTC=25°C
Ptot
714.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
VCE
Collector-emitter voltage
1)
vjmax
DCcollectorcurrent,limitedbyT
TC=25°Cvaluelimitedbybondwire
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax2)
3)
µs
5
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,4)
junction - case
Rth(j-c)
0.21
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
600
-
-
-
1.85
2.10
2.25
2.30
-
4.1
5.1
5.7
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=100.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
V
V
Gate-emitter threshold voltage
VGE(th)
IC=1.60mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=100.0A
-
50.0
-
S
V
40.0 µA
6700.0
1)
For maximal distance of 5mm between soldering point and mould
Additionally tp<10ms due to bondwire
Additionally tp<10ms due to bondwire
4)
Thermal resistance of grease Rth(c-s) (case to heat sink) more than 0.1 K/W not included.
2)
3)
4
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
6100
-
-
210
-
-
180
-
VCC=480V,IC=100.0A,
VGE=15V
-
625.0
-
nC
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-
-
A
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
pF
890
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
30
-
ns
-
47
-
ns
-
265
-
ns
-
30
-
ns
-
3.70
-
mJ
-
1.90
-
mJ
-
5.60
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=100.0A,
VGE=0.0/15.0V,
rG=3.5Ω,Lσ=25nH,
Cσ=50pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IDW50E60) reverse
recovery.
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
28
-
ns
-
44
-
ns
-
310
-
ns
-
23
-
ns
-
4.70
-
mJ
-
2.30
-
mJ
-
7.00
-
mJ
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=100.0A,
VGE=0.0/15.0V,
rG=3.5Ω,Lσ=25nH,
Cσ=50pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IDW50E60) reverse
recovery.
5
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
160
140
120
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
100
100
80
60
TC=80°
40
TC=110°
10
tp=1µs
10µs
50µs
1
100µs
200µs
20
500µs
0
10
0.1
100
DC
1
f,SWITCHINGFREQUENCY[kHz]
10
100
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tvj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=3.5Ω,Rth(j-c)=0.21K/W)
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V,
Rth(j-c)=0.21K/W)
160
140
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
715
572
429
286
120
100
80
60
40
143
20
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C,Rth(j-c)=0.21K/W)
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C,Rth(j-c)=0.21K/W)
6
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
300
300.0
VGE=20V
VGE=20V
17V
17V
250.0
15V
13V
11V
200
7V
11V
9V
7V
150.0
100
100.0
50
0
13V
200.0
9V
150
15V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
250
50.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
4.0
0.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=25°C)
1.5
2.0
2.5
3.0
3.5
4.0
3.5
VCEsat,COLLECTOR-EMITTERSATURATION[V]
Tj=25°C
Tj=175°C
200
IC,COLLECTORCURRENT[A]
1.0
Figure 6. Typicaloutputcharacteristic
(Tvj=175°C)
250
150
100
50
0
0.5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
2
4
6
8
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
VGE,GATE-EMITTERVOLTAGE[V]
IC=30A
IC=60A
IC=120A
IC=240A
0
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
7
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
1000
1E+4
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
10
10
td(off)
tf
td(on)
tr
1
0
20
40
60
80
100
1
100 120 140 160 180 200
0
5
IC,COLLECTORCURRENT[A]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,rG=3.5Ω,Dynamictestcircuitin
Figure E)
20
25
6.0
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
15
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,IC=100A,Dynamictestcircuitin
Figure E)
1000
100
10
1
10
rG,GATERESISTOR[Ω]
25
50
75
100
125
150
5.0
4.0
3.0
2.0
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=100A,rG=3.5Ω,Dynamictestcircuitin
Figure E)
typ.
min.
max.
0
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=1.6mA)
8
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
20
30
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
Eoff
Eon
Ets
15
10
5
0
0
20
40
60
80
25
20
15
10
5
0
100 120 140 160 180 200
0
5
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,rG=3.5Ω,Dynamictestcircuitin
Figure E)
20
25
30
9
Eoff
Eon
Ets
8
E,SWITCHINGENERGYLOSSES[mJ]
7
E,SWITCHINGENERGYLOSSES[mJ]
15
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,IC=100A,Dynamictestcircuitin
Figure E)
8
6
5
4
3
2
1
0
10
rG,GATERESISTOR[Ω]
Eoff
Eon
Ets
7
6
5
4
3
2
1
25
50
75
100
125
150
0
200
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=100A,rG=3.5Ω,Dynamictestcircuitin
Figure E)
250
300
350
400
450
VCE,COLLECTOR-EMITTERVOLTAGE[V]
9
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=15/0V,
IC=100A,rG=3.5Ω,Dynamictestcircuitin
Figure E)
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
15
1E+4
Ciss
Coss
Crss
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
120V
480V
10
5
0
0
100
200
300
400
500
1000
100
10
600
0
QGE,GATECHARGE[nC]
10
15
20
25
30
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
1600
13
1400
12
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
Figure 17. Typicalgatecharge
(IC=100A)
1200
1000
800
600
400
200
0
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
11
10
9
8
7
6
5
10
12
14
16
18
4
20
VGE,GATE-EMITTERVOLTAGE[V]
10
11
12
13
14
15
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,Tvj≤150°C)
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTvj≤150°C)
10
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1
0.1
D=0.5
0.2
0.1
0.01
0.05
0.02
0.01
single pulse
0.001
i:
1
2
3
4
5
6
ri[K/W]: 4.8E-3 0.03727104 0.03725716 0.1264856 6.3E-3
1.1E-3
τi[s]:
3.6E-5 2.8E-4
2.9E-3
0.01660206 0.2281022 2.482629
1E-4
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
11
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
PG-TO247-3
12
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
t
13
Rev.1.2,2013-02-07
IGW100N60H3
Highspeedswitchingseriesthirdgeneration
RevisionHistory
IGW100N60H3
Revision:2013-02-07,Rev.1.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2012-07-05
Preliminary data sheet
1.2
2013-02-07
Preliminary data sheet
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©2013InfineonTechnologiesAG
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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.
14
Rev.1.2,2013-02-07