INFINEON IDW40E65D1

Diode
RapidSwitchingEmitterControlledDiode
IDW40E65D1
EmitterControlledDiodeRapid1Series
Datasheet
IndustrialPowerControl
IDW40E65D1
EmitterControlledDiodeRapid1Series
RapidSwitchingEmitterControlledDiode
Features:
A
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(VF)
•Ultrafastrecovery
•Lowreverserecoverycharge(Qrr)
•Lowreverserecoverycurrent(Irrm)
•Softnessfactor>1
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating;RoHScompliant
C
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies
Packagepindefinition:
1
2
3
•Pin1-notconnected
•Pin2andbackside-cathode
•Pin3-anode
KeyPerformanceandPackageParameters
Type
IDW40E65D1
Vrrm
If
Vf,Tvj=25°C
Tvjmax
Marking
Package
650V
40A
1.35V
175°C
D40E65D1
PG-TO247-pin123
2
Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
Maximumratings
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
80.0
40.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
120.0
A
Diode surge non repetitive forward current
TC=25°C,tp=10.0ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
Ptot
179.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
320.0
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
0.84
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
1.35
1.32
1.28
1.70
-
-
-
Unit
StaticCharacteristic
Diode forward voltage
VF
IF=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Reverse leakage current
IR
VR=650V
Tvj=25°C
Tvj=175°C
V
40.0 µA
4000.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
13.0
-
Unit
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
LE
nH
Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
77
-
ns
-
0.87
-
µC
-
17.5
-
A
-
-1520
-
A/µs
-
129
-
ns
-
0.49
-
µC
-
6.9
-
A
-
-300
-
A/µs
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
110
-
ns
-
2.36
-
µC
-
27.3
-
A
-
-1320
-
A/µs
-
163
-
ns
-
1.04
-
µC
-
10.4
-
A
-
-600
-
A/µs
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=175°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Tvj=125°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
dirr/dt
5
Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
180
80
160
70
IF,FORWARDCURRENT[A]
Ptot,POWERDISSIPATION[W]
140
120
100
80
60
40
50
40
30
20
10
20
0
60
25
50
75
100
125
150
0
175
25
TC,CASETEMPERATURE[°C]
100
125
150
175
Figure 2. Diodeforwardcurrentasafunctionofcase
temperature
(Tvj≤175°C)
1
200
Tj=25°C, IF = 40A
Tj=125°C, IF = 40A
Tj=175°C, IF = 40A
180
trr,REVERSERECOVERYTIME[ns]
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
1E-5
1E-4
0.001
0.01
0.1
160
140
120
100
80
60
40
20
i:
1
2
3
4
5
6
ri[K/W]: 0.015899 0.19942 0.23881 0.34593
0.036218 2.8E-3
τi[s]:
1.9E-5
2.4E-4
1.9E-3
0.01162857 0.0912415 1.815212
0.01
1E-6
75
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
50
0
200
1
tp,PULSEWIDTH[s]
600
1000
1400
1800
2200
2600
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
Figure 4. Typicalreverserecoverytimeasafunctionof
diodecurrentslope
(VR=400V)
6
Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
3.0
45
40
2.5
Irrm,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
Tj=25°C, IF = 40A
Tj=125°C, IF = 40A
Tj=175°C, IF = 40A
2.0
1.5
1.0
0.5
Tj=25°C, IF = 40A
Tj=125°C, IF = 40A
Tj=175°C, IF = 40A
35
30
25
20
15
10
5
0.0
200
600
1000
1400
1800
2200
2600
0
200
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
600
1000
1400
1800
2200
2600
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typicalreverserecoverychargeasafunction Figure 6. Typicalpeakreverserecoverycurrentasa
ofdiodecurrentslope
functionofdiodecurrentslope
(VR=400V)
(VR=400V)
0
Tj=25°C
Tj=175°C
70
-500
IF,FORWARDCURRENT[A]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-250
80
Tj=25°C, IF = 40A
Tj=125°C, IF = 40A
Tj=175°C, IF = 40A
-750
-1000
-1250
-1500
-1750
60
50
40
30
20
-2000
10
-2250
-2500
200
600
1000
1400
1800
2200
2600
0
0.00
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VF,FORWARDVOLTAGE[V]
Figure 7. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
Figure 8. Typicaldiodeforwardcurrentasafunctionof
forwardvoltage
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Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
2.00
IF=10A
IF=20A
IF=40A
IF=60A
IF=80A
VF,FORWARDVOLTAGE[V]
1.75
1.50
1.25
1.00
0.75
0.50
0
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicaldiodeforwardvoltageasafunctionof
junctiontemperature
8
Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
PG-TO247-3
9
Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
a
a
b
b
t
10
Rev.1.1,2013-03-13
IDW40E65D1
EmitterControlledDiodeRapid1Series
RevisionHistory
IDW40E65D1
Revision:2013-03-13,Rev.1.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2013-03-13
Preliminary data sheet
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81726München,Germany
©2013InfineonTechnologiesAG
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Rev.1.1,2013-03-13