Diode RapidSwitchingEmitterControlledDiode IDW40E65D1 EmitterControlledDiodeRapid1Series Datasheet IndustrialPowerControl IDW40E65D1 EmitterControlledDiodeRapid1Series RapidSwitchingEmitterControlledDiode Features: A •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •Softnessfactor>1 •175°Cjunctionoperatingtemperature •Pb-freeleadplating;RoHScompliant C Applications: •AC/DCconverters •BoostdiodeinPFCstages •Freewheelingdiodesininvertersandmotordrives •Generalpurposeinverters •Switchmodepowersupplies Packagepindefinition: 1 2 3 •Pin1-notconnected •Pin2andbackside-cathode •Pin3-anode KeyPerformanceandPackageParameters Type IDW40E65D1 Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 40A 1.35V 175°C D40E65D1 PG-TO247-pin123 2 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series Maximumratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 80.0 40.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTC=25°C Ptot 179.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 320.0 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit Diode thermal resistance,1) junction - case Rth(j-c) 0.84 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 1.35 1.32 1.28 1.70 - - - Unit StaticCharacteristic Diode forward voltage VF IF=40.0A Tvj=25°C Tvj=125°C Tvj=175°C Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C V 40.0 µA 4000.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 13.0 - Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case 1) LE nH Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. 4 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 77 - ns - 0.87 - µC - 17.5 - A - -1520 - A/µs - 129 - ns - 0.49 - µC - 6.9 - A - -300 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=200A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 110 - ns - 2.36 - µC - 27.3 - A - -1320 - A/µs - 163 - ns - 1.04 - µC - 10.4 - A - -600 - A/µs DiodeCharacteristic,atTvj=175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs Tvj=125°C, VR=400V, IF=40.0A, diF/dt=200A/µs dirr/dt 5 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series 180 80 160 70 IF,FORWARDCURRENT[A] Ptot,POWERDISSIPATION[W] 140 120 100 80 60 40 50 40 30 20 10 20 0 60 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 100 125 150 175 Figure 2. Diodeforwardcurrentasafunctionofcase temperature (Tvj≤175°C) 1 200 Tj=25°C, IF = 40A Tj=125°C, IF = 40A Tj=175°C, IF = 40A 180 trr,REVERSERECOVERYTIME[ns] D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 1E-5 1E-4 0.001 0.01 0.1 160 140 120 100 80 60 40 20 i: 1 2 3 4 5 6 ri[K/W]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E-3 τi[s]: 1.9E-5 2.4E-4 1.9E-3 0.01162857 0.0912415 1.815212 0.01 1E-6 75 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 50 0 200 1 tp,PULSEWIDTH[s] 600 1000 1400 1800 2200 2600 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 4. Typicalreverserecoverytimeasafunctionof diodecurrentslope (VR=400V) 6 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series 3.0 45 40 2.5 Irrm,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] Tj=25°C, IF = 40A Tj=125°C, IF = 40A Tj=175°C, IF = 40A 2.0 1.5 1.0 0.5 Tj=25°C, IF = 40A Tj=125°C, IF = 40A Tj=175°C, IF = 40A 35 30 25 20 15 10 5 0.0 200 600 1000 1400 1800 2200 2600 0 200 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 600 1000 1400 1800 2200 2600 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typicalreverserecoverychargeasafunction Figure 6. Typicalpeakreverserecoverycurrentasa ofdiodecurrentslope functionofdiodecurrentslope (VR=400V) (VR=400V) 0 Tj=25°C Tj=175°C 70 -500 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] -250 80 Tj=25°C, IF = 40A Tj=125°C, IF = 40A Tj=175°C, IF = 40A -750 -1000 -1250 -1500 -1750 60 50 40 30 20 -2000 10 -2250 -2500 200 600 1000 1400 1800 2200 2600 0 0.00 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VF,FORWARDVOLTAGE[V] Figure 7. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) Figure 8. Typicaldiodeforwardcurrentasafunctionof forwardvoltage 7 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series 2.00 IF=10A IF=20A IF=40A IF=60A IF=80A VF,FORWARDVOLTAGE[V] 1.75 1.50 1.25 1.00 0.75 0.50 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicaldiodeforwardvoltageasafunctionof junctiontemperature 8 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series PG-TO247-3 9 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series a a b b t 10 Rev.1.1,2013-03-13 IDW40E65D1 EmitterControlledDiodeRapid1Series RevisionHistory IDW40E65D1 Revision:2013-03-13,Rev.1.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2013-03-13 Preliminary data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 11 Rev.1.1,2013-03-13