PH4840S N-channel TrenchMOS intermediate level FET Rev. 02 — 6 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features n Low thermal resistance n Low threshold voltage n SO8 equivalent area footprint n Low on-state resistance 1.3 Applications n DC-to-DC converters n Portable appliances n DC motor drives n Switched-mode power supplies n Notebook computers 1.4 Quick reference data n VDS ≤ 40 V n RDSon ≤ 4.1 mΩ n ID ≤ 94.5 A n Ptot ≤ 62.5 W 2. Pinning information Table 1. Pinning Pin Description 1, 2, 3 source (S) 4 gate (G) mb mounting base; connected to drain (D) Simplified outline Symbol D mb G mbb076 1 2 3 4 SOT669 (LFPAK) S PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 3. Ordering information Table 2. Ordering information Type number PH4840S Package Name Description Version LFPAK plastic single-ended surface-mounted package; 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 25 °C ≤ Tj ≤ 150 °C - 40 V - ±20 V Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 - 94.5 A Tmb = 100 °C; VGS = 10 V; see Figure 2 - 59.5 A Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 283 A Tmb = 25 °C; see Figure 1 - 62.5 W storage temperature −55 +150 °C junction temperature −55 +150 °C VDS drain-source voltage VGS gate-source voltage ID drain current IDM peak drain current Ptot total power dissipation Tstg Tj Source-drain diode IS source current Tmb = 25 °C - 52 A ISM peak source current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 150 A unclamped inductive load; ID = 51 A; tp = 0.21 ms; VDS ≤ 40 V; VGS = 10 V; starting at Tj = 25 °C - 250 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy PH4840S_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 2 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 03aa15 120 03aa23 120 Pder Ider (%) (%) 80 80 40 40 0 0 0 50 100 50 0 200 150 100 Tmb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) 200 Tmb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature 003aaa430 103 ID (A) 150 Limit RDSon = VDS / ID 102 tp = 10 µ s DC 100 µ s 1 ms 10 ms 10 100 ms 1 10-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is single pulse; VGS = 10 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PH4840S_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 3 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to mounting base see Figure 4 Rth(j-mb) Min Typ Max Unit - - 2 K/W 003aaa431 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 δ= P 0.1 0.05 0.02 single pulse 10-1 10-5 tp T t tp T 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PH4840S_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 4 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V 40 - - V Tj = 25 °C 1 2 3 V Tj = 150 °C 0.5 - - V Tj = −55 °C - - 2.2 V - 0.06 1 µA Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 1 mA; VDS = VGS; see Figure 9 and 10 VDS = 40 V; VGS = 0 V Tj = 25 °C Tj = 150 °C - - 500 µA - 2 100 nA Tj = 25 °C - 3.5 4.1 mΩ Tj = 150 °C IGSS gate leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 6 and 8 - 5.6 7.0 mΩ VGS = 7 V; ID = 25 A; see Figure 6 and 8 - 3.85 4.8 mΩ ID = 30 A; VDS = 32 V; VGS = 10 V; see Figure 11 and 12 - 67 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf - 8.6 - nC - 16 - nC VGS = 0 V; VDS = 10 V; f = 1 MHz; see Figure 14 - 3660 - pF - 877 - pF - 454 - pF VDS = 20 V; ID = 25 Ω; VGS = 10 V; RG = 4.7 Ω - 21 - ns - 35 - ns turn-off delay time - 82 - ns fall time - 31 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 13 - 0.85 1.2 V trr reverse recovery time IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V - 46 - ns PH4840S_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 5 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 003aaa432 50 10 5 ID (A) 4 VGS (V) = 3.5 003aaa434 20 3.3 VGS (V) = 3.2 RDSon (mΩ) 3.4 3.5 3.4 40 15 3.3 30 3.2 10 20 3.7 3.1 3 10 4 5 5 2.9 2.8 7 0 10 0 0 0.2 0.4 0.6 0.8 VDS (V) 0 1 Tj = 25 °C 10 20 30 40 ID (A) 50 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 003aaa433 40 ID (A) Fig 6. Drain-source on-state resistance as a function of drain current; typical values 03aa28 2.4 a 30 1.8 20 1.2 Tj = 150 °C 25 °C 0.6 10 0 0 1 2 3 VGS (V) 4 Tj = 25 °C and 150 °C; VDS > ID × RDSon 0 -60 60 120 Tj (°C) 180 R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature PH4840S_2 Product data sheet 0 © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 6 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 003aaa485 4 VGS(th) (V) 10-2 max 3 003aab628 10-1 ID (A) min typ max 10-3 typ 2 10-4 min 1 10-5 0 -60 10-6 0 60 120 Tj (°C) 180 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aaa437 10 VGS (V) 8 VDS ID 6 VGS(pl) 4 VGS(th) VGS 2 QGS1 QGS2 QGS 0 0 20 40 60 QG (nC) 80 QGD QG(tot) 003aaa508 ID = 30 A; VDS = 32 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform definitions PH4840S_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 7 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 003aaa436 40 IS (A) 003aaa435 104 C (pF) 30 Ciss 103 20 150 °C Coss Tj = 25 °C 10 0 0.2 Crss 0.4 0.6 0.8 VSD (V) 1 Tj = 25 °C and 150 °C; VGS = 0 V 102 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PH4840S_2 Product data sheet 1 © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 8 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16 MO-235 Fig 15. Package outline SOT669 (LFPAK) PH4840S_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 9 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes PH4840S_2 20061106 Product data sheet - PH4840S-01 Modifications: PH4840S-01 (9397 750 12814) • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. 20040304 Preliminary data PH4840S_2 Product data sheet - - © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 10 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PH4840S_2 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 02 — 6 November 2006 11 of 12 PH4840S NXP Semiconductors N-channel TrenchMOS intermediate level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 November 2006 Document identifier: PH4840S_2