IGP20N65H5 Data Sheet (2 MB, EN)

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGP20N65H5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
C
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowQg
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
C
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
G
C E
KeyPerformanceandPackageParameters
Type
IGP20N65H5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
20A
1.65V
175°C
G20EH5
PG-TO220-3
2
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
42.0
21.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
60.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs
-
60.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
125.0
63.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
1.20
K/W
Thermal resistance
junction - ambient
Rth(j-a)
62
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.65
1.85
1.95
2.10
-
Gate-emitter threshold voltage
VGE(th)
IC=0.20mA,VCE=VGE
3.2
4.0
4.8
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=20.0A
-
24.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
4
V
V
V
40.0 µA
4000.0
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1200
-
-
30
-
-
5
-
-
48.0
-
nC
-
7.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=20.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
18
-
ns
-
8
-
ns
-
156
-
ns
-
13
-
ns
-
0.17
-
mJ
-
0.06
-
mJ
-
0.23
-
mJ
-
16
-
ns
-
3
-
ns
-
168
-
ns
-
36
-
ns
-
0.04
-
mJ
-
0.02
-
mJ
-
0.06
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=10.0A,
VGE=0.0/15.0V,
rG=32.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
rG=32.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
5
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
17
-
ns
-
11
-
ns
-
190
-
ns
-
28
-
ns
-
0.27
-
mJ
-
0.11
-
mJ
-
0.38
-
mJ
-
15
-
ns
-
4
-
ns
-
224
-
ns
-
55
-
ns
-
0.08
-
mJ
-
0.04
-
mJ
-
0.12
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=10.0A,
VGE=0.0/15.0V,
rG=32.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
rG=32.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
100
130
120
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
110
10
DC
1
100
90
80
70
60
50
40
30
20
10
0.1
1
10
100
0
1000
25
VCE,COLLECTOR-EMITTERVOLTAGE[V]
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
45
60
55
40
50
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
35
30
25
20
15
10
VGE=18V
45
15V
40
12V
35
10V
30
8V
25
7V
20
6V
5V
15
10
5
0
5
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
7
Rev.2.1,2014-06-11
IGP20N65H5
60
60
55
55
50
50
VGE=18V
45
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
Highspeedswitchingseriesfifthgeneration
15V
40
12V
35
10V
30
8V
25
7V
20
6V
5V
15
Tj=25°C
Tj=150°C
45
40
35
30
25
20
15
4V
10
10
5
5
0
0
1
2
3
4
0
5
3.5
4.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
IC=5A
IC=10A
IC=20A
td(off)
tf
td(on)
tr
1.75
100
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
2.00
1.50
1.25
1.00
10
0.75
0.50
0
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
5
10 15 20 25 30 35 40 45 50 55 60
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=32Ω,Dynamictestcircuitin
Figure E)
8
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
100
100
10
1
10
20
30
40
50
60
70
80
10
1
90 100 110 120
25
50
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=10A,Dynamictestcircuitin
Figure E)
100
125
150
175
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=10A,rG=32Ω,Dynamictestcircuitin
Figure E)
6.0
3.0
typ.
min.
max.
5.5
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Tvj,JUNCTIONTEMPERATURE[°C]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
2.5
2.0
1.5
1.0
0.5
1.5
1.0
0
25
50
75
100
125
0.0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
5
10 15 20 25 30 35 40 45 50 55 60
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.2mA)
9
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=32Ω,Dynamictestcircuitin
Figure E)
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
0.8
0.50
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
10
20
30
40
50
60
70
80
0.00
90 100 110 120
25
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=10A,Dynamictestcircuitin
Figure E)
125
150
175
130V
520V
14
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
100
16
Eoff
Eon
Ets
0.40
0.35
0.30
0.25
0.20
0.15
0.10
12
10
8
6
4
2
0.05
0.00
200
75
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=10A,rG=32Ω,Dynamictestcircuitin
Figure E)
0.50
0.45
50
Tvj,JUNCTIONTEMPERATURE[°C]
250
300
350
400
450
0
500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=10A,rG=32Ω,Dynamictestcircuitin
Figure E)
0
5
10
15
20
25
30
35
40
45
50
QGE,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=20A)
10
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
1E+4
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Cies
Coes
Cres
C,CAPACITANCE[pF]
1000
100
10
1
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.2392053 0.410959 0.4430167 0.1066175
τi[s]:
1.4E-4
1.2E-3
0.01493292 0.1213884
1
0
5
10
15
20
25
0.001
1E-7
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
1E-6
1E-5
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
11
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
PG-TO220-3
12
Rev.2.1,2014-06-11
IGP20N65H5
Highspeedswitchingseriesfifthgeneration
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E =
off
∫V
t
CE
t4
x IC x d t
E
1
t1
on
=
∫V
t
CE x IC x d t
2% VCE
3
t2
t3
t4
13
t
Rev.2.1,2014-06-11
IGP20N65H5
High speed switching series fifth generation
Revision History
IGP20N65H5
Revision: 2014-06-11, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-06-11
Final data sheet
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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
14
Rev. 2.1, 2014-06-11