INFINEON IKW50N65H5

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKW50N65H5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
FeaturesandBenefits:
C
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowQg
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
G
C
E
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
IKW50N65H5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
50A
1.65V
175°C
K50H655
PG-TO247-3
2
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
Maximumratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC
80.0
56.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
150.0
A
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C
-
150.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IF
40.0
27.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
150.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
305.0
145.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.50
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
1.50
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
4
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
650
-
-
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.65
1.85
1.95
2.10
-
-
1.45
1.40
1.40
1.80
-
3.2
4.0
4.8
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
Collector-emitter saturation voltage VCEsat
V
V
Diode forward voltage
VF
VGE=0V,IF=27.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Gate-emitter threshold voltage
VGE(th)
IC=0.50mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=50.0A
-
62.0
-
S
V
V
40.0 µA
4000.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
3000
-
-
65
-
-
11
-
-
120.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=50.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
21
-
ns
-
15
-
ns
-
180
-
ns
-
18
-
ns
-
0.52
-
mJ
-
0.18
-
mJ
-
0.70
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
rG=12.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
5
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
rG=12.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
20
-
ns
-
4
-
ns
-
200
-
ns
-
25
-
ns
-
0.11
-
mJ
-
0.05
-
mJ
-
0.16
-
mJ
-
57
-
ns
-
0.57
-
µC
-
16.7
-
A
-
-415
-
A/µs
-
32
-
ns
-
0.27
-
µC
-
13.0
-
A
-
-1150
-
A/µs
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VR=400V,
IF=25.0A,
diF/dt=1200A/µs
Tvj=25°C,
VR=400V,
IF=6.0A,
diF/dt=1200A/µs
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
20
-
ns
-
15
-
ns
-
205
-
ns
-
26
-
ns
-
0.75
-
mJ
-
0.27
-
mJ
-
1.02
-
mJ
-
18
-
ns
-
5
-
ns
-
250
-
ns
-
35
-
ns
-
0.20
-
mJ
-
0.08
-
mJ
-
0.28
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
rG=12.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
rG=12.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=150°C,
VR=400V,
IF=25.0A,
diF/dt=1200A/µs
Tvj=150°C,
VR=400V,
IF=6.0A,
diF/dt=1200A/µs
dirr/dt
7
-
90
-
ns
-
1.31
-
µC
-
22.6
-
A
-
-300
-
A/µs
-
50
-
ns
-
0.64
-
µC
-
19.8
-
A
-
-600
-
A/µs
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
300
100
270
10
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
240
tp=1µs
10µs
50µs
100µs
1
200µs
500µs
210
180
150
120
90
60
DC
30
0.1
1
10
100
0
1000
25
VCE,COLLECTOR-EMITTERVOLTAGE[V]
100
125
150
175
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
90
150
80
135
120
IC,COLLECTORCURRENT[A]
70
IC,COLLECTORCURRENT[A]
75
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
60
50
40
30
20
VGE=20V
18V
105
15V
90
12V
75
10V
60
8V
7V
45
6V
30
10
0
50
5V
15
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
8
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
150
150
130
120
VGE=20V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
120
18V
105
15V
90
12V
75
10V
60
8V
7V
45
6V
30
110
100
90
80
70
60
50
40
30
5V
20
15
0
Tj=25°C
Tj=150°C
140
135
10
0
1
2
3
4
0
5
3.5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.50
1000
IC=12,5A
IC=25A
IC=50A
2.25
td(off)
tf
td(on)
tr
2.00
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
4.0
1.75
1.50
1.25
100
10
1.00
0.75
0.50
0
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
30
60
90
120
150
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
9
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
10
1
5
15
25
35
45
55
65
75
100
10
1
85
25
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=25A,Dynamictestcircuitin
Figure E)
100
125
150
175
12
typ.
min.
max.
5.5
Eoff
Eon
Ets
11
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
10
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
30
60
90
120
150
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
10
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
2.50
1.2
Eoff
Eon
Ets
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.0
0.8
0.6
0.4
0.2
0.25
0.00
5
15
25
35
45
55
65
75
0.0
85
25
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=25A,Dynamictestcircuitin
Figure E)
75
100
125
150
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
1.2
16
Eoff
Eon
Ets
130V
520V
14
1.0
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
50
Tvj,JUNCTIONTEMPERATURE[°C]
0.8
0.6
0.4
12
10
8
6
4
0.2
2
0.0
200
250
300
350
400
450
0
500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
0
20
40
60
80
100
120
QGE,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=50A)
11
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
1
C,CAPACITANCE[pF]
1E+4
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
Ciss
Coss
Crss
1000
100
10
1
0
5
10
15
20
25
D=0.5
0.2
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
ri[K/W]: 0.1621884 0.2278266 0.109985
τi[s]:
8.6E-4
0.01112208 0.09568113
0.001
1E-6
30
0.1
0.1
VCE,COLLECTOR-EMITTERVOLTAGE[V]
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
1
120
trr,REVERSERECOVERYTIME[ns]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
130
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
0.001
1E-7
1E-5
1E-4
0.001
0.01
0.1
110
100
90
80
70
60
50
40
i:
1
2
3
4
ri[K/W]: 0.4131024 0.4494995 0.4867563 0.1506418
τi[s]:
1.4E-4
1.3E-3
0.01007841 0.09232929
1E-6
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
30
500 600 700 800 900 1000 1100 1200 1300 1400 1500
1
tp,PULSEWIDTH[s]
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
12
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
1.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
21
19
17
15
13
11
9
7
0.4
0.3
500
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
23
Irr,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
1.4
25
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
700
900
1100
1300
5
500
1500
700
900
1100
1300
diF/dt,DIODECURRENTSLOPE[A/µs]
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
0
81
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
-100
63
-150
-200
-250
-300
-350
54
45
36
27
18
-400
9
-450
-500
500
Tj=25°C
Tj=150°C
72
IF,FORWARDCURRENT[A]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-50
1500
700
900
1100
1300
1500
diF/dt,DIODECURRENTSLOPE[A/µs]
0
0.0
0.5
1.0
1.5
2.0
2.5
VF,FORWARDVOLTAGE[V]
Figure 23. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
Figure 24. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
13
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
2.0
IF=13,5A
IF=27A
IF=54A
VF,FORWARDVOLTAGE[V]
1.8
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 25. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
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Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
PG-TO247-3
15
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
a
a
b
b
t
16
Rev.1.1,2012-11-09
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
RevisionHistory
IKW50N65H5
Revision:2012-11-09,Rev.1.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2012-11-09
Preliminary data sheet
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Rev.1.1,2012-11-09