IGP30N65F5 Data Sheet (1.9 MB, EN)

IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGP30N65F5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
C
HighspeedF5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowgatechargeQG
•IdealfitwithSICSchottkyDiodeinboostconverters
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
C
TargetApplications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
G
C E
KeyPerformanceandPackageParameters
Type
IGP30N65F5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
30A
1.6V
175°C
G30EF5
PG-TO220-3
2
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
55.0
35.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
90.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs
-
90.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
188.0
93.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.80
K/W
Thermal resistance
junction - ambient
Rth(j-a)
62
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.60
1.80
1.90
2.10
-
Gate-emitter threshold voltage
VGE(th)
IC=0.30mA,VCE=VGE
3.2
4.0
4.8
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=30.0A
-
38.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
4
V
V
V
40.0 µA
4000.0
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1800
-
-
45
-
-
9
-
-
65.0
-
nC
-
7.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=30.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
19
-
ns
-
9
-
ns
-
170
-
ns
-
10
-
ns
-
0.28
-
mJ
-
0.07
-
mJ
-
0.35
-
mJ
-
18
-
ns
-
4
-
ns
-
174
-
ns
-
15
-
ns
-
0.09
-
mJ
-
0.02
-
mJ
-
0.11
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=23.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=23.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
5
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
18
-
ns
-
10
-
ns
-
203
-
ns
-
3
-
ns
-
0.38
-
mJ
-
0.12
-
mJ
-
0.50
-
mJ
-
16
-
ns
-
5
-
ns
-
230
-
ns
-
9
-
ns
-
0.15
-
mJ
-
0.04
-
mJ
-
0.19
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=23.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=23.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
100
200
180
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
160
10
not for linear use
1
140
120
100
80
60
40
20
0.1
1
10
100
0
1000
25
VCE,COLLECTOR-EMITTERVOLTAGE[V]
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs.
RecommendeduseatVGE≥7.5V)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
60
90
80
50
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
70
40
30
20
VGE=18V
15V
60
12V
10V
50
8V
40
7V
6V
30
5V
20
4V
10
10
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
7
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
90
90
80
80
70
VGE=18V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
70
15V
60
12V
10V
50
8V
40
7V
6V
30
5V
20
60
50
40
30
20
4V
10
0
Tj=25°C
Tj=150°C
10
0
1
2
3
4
0
5
4.5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
IC=7,5A
IC=15A
IC=30A
1.75
td(off)
tf
td(on)
tr
100
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
2.00
1.50
1.25
1.00
10
0.75
0.50
0
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
10
20
30
40
50
60
70
80
90
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=23Ω,Dynamictestcircuitin
Figure E)
8
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
100
100
10
1
5
15
25
35
45
55
65
75
10
1
85
25
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=15A,Dynamictestcircuitin
Figure E)
75
100
125
150
175
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=15A,rG=23Ω,Dynamictestcircuitin
Figure E)
6
5.0
typ.
min.
max.
Eoff
Eon
Ets
4.5
5
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
50
Tvj,JUNCTIONTEMPERATURE[°C]
4
3
2
1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
0.0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
10
20
30
40
50
60
70
80
90
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.3mA)
9
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=23Ω,Dynamictestcircuitin
Figure E)
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
1.0
0.8
Eoff
Eon
Ets
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.6
0.5
0.4
0.3
0.2
0.1
0.1
0.0
Eoff
Eon
Ets
0.7
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
0.9
5
15
25
35
45
55
65
75
0.0
85
25
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=15A,Dynamictestcircuitin
Figure E)
75
100
125
150
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=15A,rG=23Ω,Dynamictestcircuitin
Figure E)
0.6
16
Eoff
Eon
Ets
130V
520V
14
0.5
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
50
Tvj,JUNCTIONTEMPERATURE[°C]
0.4
0.3
0.2
12
10
8
6
4
0.1
2
0.0
200
250
300
350
400
450
0
500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=15A,rG=23Ω,Dynamictestcircuitin
Figure E)
0
10
20
30
40
50
60
70
80
QGE,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=30A)
10
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
1E+4
1
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Cies
Coes
Cres
C,CAPACITANCE[pF]
1000
100
10
1
0
5
10
15
20
25
D=0.5
0.2
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.07749916 0.2797936 0.2828165 0.1598907
τi[s]:
3.7E-5
3.6E-4
4.9E-3
0.04086392
0.001
1E-6
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0.1
0.1
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
11
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
PG-TO220-3
12
Rev.2.2,2014-12-04
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
vGE(t)
I,V
90% VGE
dIF/dt
a
a
10% VGE
b
b
t
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
vGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
vCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Ls,
relief capacitor Cr,
(only for ZVT switching)
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
13
Rev.2.2,2014-12-04
IGP30N65F5
High speed switching series fifth generation
Revision History
IGP30N65F5
Revision: 2014-12-04, Rev. 2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-06-11
Final data sheet
2.2
2014-12-04
Minor changes Fig.1 and Fig.14
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Published by
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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
14
Rev. 2.2, 2014-12-04