PANASONIC MA22D39

Schottky Barrier Diodes (SBD)
MA22D39
Silicon epitaxial planar type
For high speed switching circuits
Unit: mm
 Features
0.80±0.05
1.6±0.1
 Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification
 Reverse voltage VR = 40 V is guaranteed
1
2.6±0.1
3.5±0.1
0 to 0.1
Rating
Unit
VR
40
V
VRM
40
V
IF(RMS)
1.57
A
IFSM
30
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Reverse voltage
Maximum peak reverse voltage
Forward current (Effective value) *1
Non-repetitive peak forward surge current *2
2
0.45±0.1
0.55±0.1
0.16+0.1
–0.06
5°
0 to 0.3
Symbol
0 to 0.1
Parameter
5°
 Absolute Maximum Ratings Ta = 25°C
1: Anode
2: Cathode
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Mini2-F1 Package
Marking Symbol: 3N
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VF1
IF = 0.5 A
0.48
VF2
IF = 1.1 A
0.54
VF3
IF = 1.5 A
0.57
Reverse current
IR
VR = 40 V
100
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
50
pF
Reverse recovery time *
trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 Ω
30
ns
Forward voltage
V
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: January 2005
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKH00141AED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = IR = 100 mA
RL = 100 Ω
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
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2003 SEP