IRG4PC50U Data Sheet (636 KB, EN)

PD -95186
IRG4PC50UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
VCES = 600V
VCE(on) typ. = 1.65V
G
@VGE = 15V, IC = 27A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
55
27
220
220
± 20
20
200
78
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
---0.24
---6 (0.21)
0.64
---40
----
Units
°C/W
g (oz)
1
04/26/04
IRG4PC50UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 ---Emitter-to-Collector Breakdown Voltage T 18
---∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60
---- 1.65
VCE(ON)
Collector-to-Emitter Saturation Voltage
---- 2.0
---- 1.6
VGE(th)
Gate Threshold Voltage
3.0 ---∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
---- -13
gfe
Forward Transconductance U
16
24
------ICES
Zero Gate Voltage Collector Current
---- ------- ---IGES
Gate-to-Emitter Leakage Current
---- ---V(BR)CES
V(BR)ECS
Max. Units
Conditions
---V
VGE = 0V, IC = 250µA
---V
VGE = 0V, IC = 1.0A
---- V/°C VGE = 0V, IC = 1.0mA
2.0
IC = 27A
VGE = 15V
---IC = 55A
See Fig.2, 5
V
---IC = 27A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
---- mV/°C VCE = VGE, IC = 250µA
---S
VCE ≥ 15V, IC = 27A
250
µA VGE = 0V, VCE = 600V
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
5000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
----------------------------------------------------------
Typ.
180
25
61
32
20
170
88
0.12
0.54
0.66
31
23
230
120
1.6
13
4000
250
52
Max. Units
Conditions
270
IC = 27A
38
nC
VCC = 400V
See Fig. 8
90
VGE = 15V
------TJ = 25°C
ns
260
IC = 27A, VCC = 480V
130
VGE = 15V, RG = 5.0Ω
---Energy losses include "tail"
---mJ
See Fig. 10, 11, 13, 14
0.9
---TJ = 150°C,
---IC = 27A, VCC = 480V
ns
---VGE = 15V, RG = 5.0Ω
---Energy losses include "tail"
---mJ
See Fig. 13, 14
---nH
Measured 5mm from package
---VGE = 0V
---pF
VCC = 30V
See Fig. 7
---ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC50UPbF
80
F o r b o th :
60
L oad C urre nt (A )
T rian gu la r w a ve:
D u t y c yc le: 5 0%
T J = 1 2 5 °C
T s in k = 9 0 °C
G a te d r ive a s sp ec ified
P o w e r D is sip atio n = 40 W
C la m p vo lta g e :
8 0 % o f ra te d
S q u are w a ve :
40
6 0 % o f ra ted
vo ltag e
20
Idea l d io des
A
0
0.1
1
10
100
f, F re qu e nc y (k H z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
I C , C ollec to r-to-Em itte r C u rre nt (A)
I C , C o lle ctor-to-E m itter Cu rre n t (A )
1000
100
T J = 1 5 0 °C
10
T J = 2 5 °C
1
VGE = 15V
2 0 µ s P U L S E W ID T H
0.1
0
1
A
10
VC E , C o lle c to r-to -E m itte r V o lta g e (V )
Fig. 2 - Typical Output Characteristics
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100
TJ = 1 5 0°C
T J = 2 5 °C
10
V C C = 10 V
5 µs P U L S E W IDTH A
1
4
6
8
10
12
VG E , G a te -to -E m itte r V o lta g e (V )
Fig. 3 - Typical Transfer Characteristics
3
IRG4PC50UPbF
2.5
V G E = 15 V
V CE , C olle ctor-to-E m itte r V oltage (V)
M aximum D C Collector Current (A )
60
50
40
30
20
10
0
25
50
75
100
125
V G E = 1 5V
8 0 µs P U L S E W ID TH
IC = 5 4 A
2.0
IC = 2 7 A
1.5
IC = 14 A
A
1.0
150
-60
T C , C ase Tem perature (°C)
-40
-20
0
20
40
60
80
100 120
140 160
T J , Ju n c tio n Te m p e ra tu re (°C )
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
T h e rm a l R e s p o n se (Z thJ C )
1
D = 0 .5 0
0 .2 0
0 .1
0 .1 0
PD M
0 .0 5
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
0 .0 2
t
N ote s :
1 . D u ty f ac t or D = t
0 .0 1
0 .0 1
0 .0 0 0 0 1
1
1
/t
2
2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50UPbF
V GE
C ie s
C re s
C o es
6000
=
=
=
=
20
0V ,
f = 1M Hz
C ge + C gc , C ce SH OR T ED
C gc
C ce + C gc
V G E , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
8000
C ie s
4000
C oe s
2000
C res
16
12
8
4
A
0
1
10
VC E = 400V
I C = 27A
A
0
0
100
40
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total Switching Losses (mJ)
2.0
160
200
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 480V
= 15V
= 25°C
= 27A
To ta l S w itc h in g L os se s (m J)
VC C
VG E
TJ
IC
120
Q g , Total Gate Charge (nC)
VC E , C o lle c to r-to -E m itte r V o lta g e (V )
2.2
80
1.8
1.6
1.4
1.2
1.0
R G = 5 .0 Ω
V GE = 15V
V CC = 480V
IC = 5 4 A
IC = 2 7A
1
IC = 1 4 A
0.8
A
0.6
0
10
20
30
40
50
60
R G , Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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A
0.1
-60
-40
-20
0
20
40
60
80
100
120 140
160
TJ , J u n ctio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PC50UPbF
RG
TJ
V CC
V GE
1000
= 5 .0Ω
= 1 5 0 °C
= 480V
= 15V
I C , C ollector-to-E m itter Current (A )
Total Switc hing Losses (mJ )
3.0
2.0
1.0
A
0.0
0
10
20
30
40
50
I C , C o lle cto r-to -E m itte r C u rre n t (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGGE E= 2 0V
T J = 125 °C
S A FE O P E R A T IN G A R E A
100
10
1
1
10
100
1000
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
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IRG4PC50UPbF
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
Q
480V
4 X IC@25°C
480µF
960V
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
9 0%
1 0%
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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7
IRG4PC50UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
E XAMPL E : T HIS IS AN IR F PE 30
WIT H AS S E MB LY
L OT CODE 5657
AS S E MB L E D ON WW 35, 2000
IN T H E AS S E MB LY L INE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
PAR T NU MB E R
IR F PE 30
56
AS S E MB L Y
L OT CODE
035H
57
DAT E CODE
YE AR 0 = 2000
WE E K 35
L INE H
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/