IRF IRG4BC40SPBF

PD - 95175
IRG4BC40SPbF
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Lead-Free
VCES = 600V
VCE(on) typ. = 1.32V
G
@VGE = 15V, IC = 31A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
60
31
120
120
± 20
15
160
65
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.50
–––
2.0 (0.07)
0.77
–––
80
–––
Units
°C/W
g (oz)
1
04/23/04
IRG4BC40SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage T 18
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.75
— 1.32
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 1.68
— 1.32
VGE(th)
Gate Threshold Voltage
3.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-9.3
gfe
Forward Transconductance U
12
21
—
—
ICES
Zero Gate Voltage Collector Current
—
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
V(BR)ECS
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
VGE = 15V
1.5
IC = 31A
—
IC = 60A
See Fig.2, 5
V
—
IC = 31A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 31A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
100
14
34
22
18
650
380
0.45
6.5
6.95
23
21
1000
940
12
7.5
2200
140
26
Max. Units
Conditions
150
IC = 31A
21
nC
VCC = 400V
See Fig. 8
51
VGE = 15V
—
—
TJ = 25°C
ns
980
IC = 31A, VCC = 480V
570
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ
See Fig. 10, 11, 13, 14
9.9
—
TJ = 150°C,
—
IC = 31A, VCC = 480V
ns
—
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 13, 14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40SPbF
70
F o r b o th :
60
50
Load Current ( A )
T ria n g u la r w a ve :
D uty c yc le: 50%
T J = 125°C
T s ink = 90°C
G ate driv e as spec ified
I
C la m p vo l ta g e :
8 0 % o f ra te d
P o w e r D is s ip a tio n = 2 8 W
40
S q u a re wave :
6 0 % o f ra te d
vo l ta g e
30
I
20
Id e a l d io de s
10
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
I C , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
1000
100
TJ = 25°C
10
TJ = 150°C
V G E = 15V
20µs PULSE WIDTH
1
0.1
1
VC E , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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A
10
100
T J = 150°C
TJ = 25°C
10
V C C = 50V
5µs PULSE WIDTH A
1
5
6
7
8
9
10
VG E , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC40SPbF
2.0
V G E = 15V
V C E , C ollec to r-to -E m itte r V oltage (V )
Maximum DC Collector Current (A)
60
50
40
30
20
10
A
0
25
50
75
100
125
VGE = 15V
8 0 µ s P U L S E W ID T H
I C = 62A
1.5
I C = 31A
I C = 16A
A
1.0
-60
150
TC , Case Temperature (°C)
-40
-20
0
20
40
60
80
100 120 140 160
T J , Ju n c tio n T e m p e ra tu re (°C )
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Therm al Response (Z th JC )
1
D = 0 .5 0
0.2 0
0 .1
0.1 0
PD M
0 .05
0.0 2
t
SIN G LE P UL SE
(T H ER M A L R E SP O NS E )
t2
N o te s:
1 . D u ty fa c to r D = t
0.0 1
0 .0 1
0 .0 0 0 0 1
1
1
/ t2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R ectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40SPbF
V GE =
C ie s =
C re s =
C oes =
20
0V ,
f = 1M H z
C ge + C gc , Cc e S H O R T E D
C gc
C ce + C g c
V GE , G a te -to -E m itter V oltage (V )
C , C a pa cita nce (pF )
4000
3000
C ie s
2000
C o es
1000
C res
A
0
1
10
VC E = 4 0 0 V
IC = 31A
16
12
8
4
A
0
100
0
20
V C E , C ollector-to-Em itter Vo ltag e (V)
7.7
100
= 480V
= 15V
= 25 °C
= 31A
7.6
7.5
7.4
A
7.3
0
10
20
30
40
50
60
R G , G ate R esistan ce (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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80
100
120
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
T otal Sw itc hing Lo sse s (m J)
T o ta l S w itching L oss es (m J)
V CC
VGE
TJ
IC
60
Q g , Total G a te C ha rge (nC )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
7.8
40
R G = 10 Ω
V G E = 1 5V
V C C = 4 80 V
I C = 62A
I C = 31A
10
IC = 16A
A
1
-60
-40
-20
0
20
40
60
80
100
120 140
160
TJ , Ju nctio n Te m p erature (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC40SPbF
RG
TJ
V CC
V GE
=
=
=
=
1000
10 Ω
150°C
480V
15V
I C , C ollecto r-to -Em itter Cu rrent (A)
Total Switching Losses (mJ)
30
20
10
A
0
0
10
20
30
40
50
60
I C , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
70
VGGE E= 2 0V
T J = 12 5 °C
100
S A FE O P E R A TIN G A R E A
10
1
1
10
100
1000
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
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IRG4BC40SPbF
L
D .U .T.
VC *
50V
RL =
0 - 480V
1000V
Q
480V
4 X IC@25°C
480µF
960V
R
* Driver sam e type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse w idth and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
9 0%
1 0%
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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7
IRG4BC40SPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.1 1 3 )
2.62 (.1 0 3 )
1 0 .5 4 (.41 5 )
1 0 .2 9 (.40 5 )
- B -
3.78 (.14 9)
3.54 (.13 9)
4.6 9 (.1 8 5)
4.2 0 (.1 6 5)
- A -
1 .3 2 (.05 2 )
1 .2 2 (.04 8 )
6.4 7 (.2 55 )
6.1 0 (.2 40 )
4
1 5 .24 (.60 0 )
1 4 .84 (.58 4 )
LEA D A S SIG NM E NTS
1.1 5 (.04 5)
M IN
1
2
3
14 .09 (.5 55 )
13 .47 (.5 30 )
1 .4 0 (.05 5 )
1 .1 5 (.04 5 )
IG BT s, CoP ACK
1234-
G A TE
C OLLECT OR
E M ITT ER
C OLLECT OR
4 .06 (.1 6 0 )
3 .55 (.1 4 0 )
3X
3X
LE A D A S S IG N M E N T S
HE XF ET
1 - GATE
2 - D R A IN
1- G A TE
3 - SOU RC E
2- D RAIN
3- S O URCE
4 - D R A IN
4- D RAIN
0 .9 3 (.0 3 7 )
0 .6 9 (.0 2 7 )
0 .3 6 (.0 1 4 )
3X
M
B
A
M
0 .5 5 (.0 22 )
0 .4 6 (.0 18 )
2 .9 2 (.1 15 )
2 .6 4 (.1 04 )
2 .5 4 (.1 0 0)
2X
N OTE S:
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14 .5 M , 19 82 .
3 O U T LIN E C O N F O R M S TO J E D E C O U T L IN E T O -2 20 A B .
2 C O N T R O L L IN G D IM E N S IO N : IN C H
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C LU D E B U R R S .
TO-220AB Part Marking Information
E X AM P L E :
T H IS IS A N I R F 1 0 1 0
L O T C O D E 17 8 9
AS S E M B L E D O N W W 1 9, 1 9 9 7
IN T H E AS S E M B L Y L I N E "C"
N o te: "P " in assem bly line
position indicates "Lead-F ree"
IN T E R N AT IO N AL
R E CT I F I E R
L O GO
AS S E M B L Y
L OT COD E
P AR T N U M B E R
D AT E CO D E
Y E AR 7 = 19 9 7
WE E K 19
L IN E C
Data and specifications subject to change without notice.
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
8
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