PD -93770 PROVISIONAL IRG4BAC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry Super-220™ (TO-273AA) package VCES = 600V VCE(on) typ. = 1.65V G @VGE = 15V, IC = 27A E N-channel Benefits • Generation 4 IGBT offers highest efficiency available • Optimized for specified application conditions Super-220™ (TO-273AA) Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 55 27 220 220 ± 20 20 200 78 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.5 ––– TBD 0.64 ––– 40 ––– Units °C/W g (oz) 1 1/19/2000 IRG4BAC50U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– ––– VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– VGE(th) Gate Threshold Voltage 3.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– gfe Forward Transconductance 16 ––– ICES Zero Gate Voltage Collector Current ––– ––– IGES Gate-to-Emitter Leakage Current ––– V(BR)CES V(BR)ECS Typ. ––– ––– 0.60 1.65 2.0 1.6 ––– -13 24 ––– ––– ––– ––– Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V VGE = 0V, IC = 1.0A ––– V/°C VGE = 0V, IC = 1.0mA 2.0 IC = 27A VGE = 15V ––– IC = 55A See Fig.2, 5 V ––– IC = 27A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 250µA ––– S VCE ³ 15V, IC = 27A 250 V GE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Collector Inductance Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 180 25 61 32 20 170 88 0.12 0.54 0.66 31 23 230 120 1.6 2.0 5.0 4000 250 52 Max. Units Conditions 270 IC = 27A 38 nC VCC = 400V See Fig. 8 90 VGE = 15V ––– ––– TJ = 25°C ns 260 IC = 27A, VCC = 480V 130 VGE = 15V, RG = 5.0Ω ––– Energy losses include "tail" ––– mJ See Fig. 10, 11, 13, 14 0.9 ––– TJ = 150°C, ––– IC = 27A, VCC = 480V ns ––– VGE = 15V, RG = 5.0Ω ––– Energy losses include "tail" ––– mJ See Fig. 13, 14 ––– nH Measured 5mm from package ––– ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See Fig. 13a) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BAC50U 80 F o r b o th : 60 L oad C urre nt (A ) T rian gu la r w a ve: D u t y c yc le: 5 0% T J = 1 2 5 °C T s in k = 9 0 °C G a te d r ive a s sp ec ified P o w e r D is sip atio n = 40 W C la m p vo lta g e : 8 0 % o f ra te d S q u are w a ve : 40 6 0 % o f ra ted vo ltag e 20 Idea l d io des A 0 0.1 1 10 100 f, F re qu e nc y (k H z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 I C , C ollec to r-to-Em itte r C u rre nt (A) I C , C o lle ctor-to-E m itter Cu rre n t (A ) 1000 100 T J = 1 5 0 °C 10 T J = 2 5 °C 1 VGE = 15V 2 0 µ s P U L S E W ID T H 0.1 0 1 A 10 VC E , C o lle c to r-to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com 100 TJ = 1 5 0°C T J = 2 5 °C 10 V C C = 10 V 5 µs P U L S E W IDTH A 1 4 6 8 10 12 VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 3 - Typical Transfer Characteristics 3 IRG4BAC50U 2.5 V G E = 15 V V CE , C olle ctor-to-E m itte r V oltage (V) M aximum D C Collector Current (A ) 60 50 40 30 20 10 0 25 50 75 100 125 V G E = 1 5V 8 0 µs P U L S E W ID TH IC = 5 4 A 2.0 IC = 2 7 A 1.5 IC = 14 A A 1.0 150 -60 T C , C ase Tem perature (°C) -40 -20 0 20 40 60 80 100 120 140 160 T J , Ju n c tio n Te m p e ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature T h e rm a l R e s p o n se (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 .1 0 PD M 0 .0 5 t 0 .0 2 t2 N ote s : 1 . D u ty f ac t or D = t 0 .0 1 0 .0 1 0 .0 0 0 0 1 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 1 /t 2 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BAC50U V GE C ie s C re s C o es 6000 = = = = 20 0V , f = 1M Hz C ge + C gc , C ce SH OR T ED C gc C ce + C gc V G E , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 8000 C ie s 4000 C oe s 2000 C res 16 12 A 0 1 10 VC E = 400V I C = 27A 8 4 A 0 0 100 40 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) 2.0 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 480V = 15V = 25°C = 27A To ta l S w itc h in g L os se s (m J) VC C VG E TJ IC 120 Q g , Total Gate Charge (nC) VC E , C o lle c to r-to -E m itte r V o lta g e (V ) 2.2 80 1.8 1.6 1.4 1.2 1.0 R G = 5 .0 Ω V GE = 15V V CC = 480V IC = 5 4 A IC = 2 7A 1 IC = 1 4 A 0.8 A 0.6 0 10 20 30 40 50 60 RG, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , J u n ctio n T e m p e ra tu re (°C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BAC50U RG TJ V CC V GE 1000 = 55.0Ω .0Ω = 1 5 0 °C = 480V = 15V I C , C ollector-to-E m itter Current (A ) Total Switc hing Losses (mJ ) 3.0 2.0 1.0 A 0.0 0 10 20 30 40 50 I C , C o lle cto r-to -E m itte r C u rre n t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGGE E= 2 0V T J = 125 °C S A FE O P E R A T IN G A R E A 100 10 1 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA www.irf.com IRG4BAC50U L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 480V 9 0% 1 0% VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4BAC50U Super-220™ (TO-273AA) Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 1/2000 8 www.irf.com