TSUS4300 Vishay Telefunken GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics. Features D D D D D D D D High radiant power and radiant intensity Low forward voltage Suitable for DC and high pulse current operation Standard T–1(ø 3 mm) package Angle of half intensity ϕ = ± 16° 94 8636 Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control systems with small package and low cost requirements in combination with silicon photo detectors. Infrared source in reflective sensors, tabe end detection. Excellent matching with phototransistor TEFT 4300. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81053 Rev. 2, 20-May-99 Test Conditions tp/T=0.5, tp=100 ms tp=100 ms t x 5sec, 2 mm from case Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W www.vishay.de • FaxBack +1-408-970-5600 1 (5) TSUS4300 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Breakdown Voltage Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100 mA VR = 5 V IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 20 mA Symbol VF VF TKVF IR V(BR) Cj Ie Ie Min Typ 1.3 2.2 –1.3 100 5 40 30 18 160 20 –0.8 ±16 950 50 0.2 800 400 800 400 7 fe TKfe ϕ lp Dl IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Max 1.7 TKlp tr tr tf tf Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 250 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) 0 94 7916 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81053 Rev. 2, 20-May-99 TSUS4300 Vishay Telefunken 1000 I e – Radiant Intensity ( mW/sr ) I F – Forward Current ( A ) 101 tp / T = 0.01, IFM = 2 A 0.02 100 0.05 0.1 0.2 100 10 1 0.5 10–1 10–2 94 7947 e 0.1 10–1 100 101 tp – Pulse Duration ( ms ) 102 100 Figure 3. Pulse Forward Current vs. Pulse Duration 1000 103 Fe – Radiant Power ( mW ) IF – Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current 104 102 101 100 10–1 100 10 1 0.1 0 1 2 4 3 VF – Forward Voltage ( V ) 94 7996 e 100 101 102 103 IF – Forward Current ( mA ) 947980 Figure 4. Forward Current vs. Forward Voltage 104 Figure 7. Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA I e rel ; Fe rel V Frel – Relative Forward Voltage 101 102 103 IF – Forward Current ( mA ) 94 7979 e 1.0 IF = 20 mA 0.8 0.9 0.4 0.8 0.7 0 94 7990 e 20 40 60 80 Tamb – Ambient Temperature ( °C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81053 Rev. 2, 20-May-99 0 –10 0 10 100 94 7993 e 50 100 140 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 3 (5) TSUS4300 Vishay Telefunken 0° I e rel – Relative Radiant Intensity Fe rel – Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° IF = 100 mA 0 900 94 7994 e 950 1000 l – Wavelength ( nm ) Figure 9. Relative Radiant Power vs. Wavelength 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7981 e Figure 10. Relative Radiant Intensity vs. Angular Displacement Dimensions in mm 9612208 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 81053 Rev. 2, 20-May-99 TSUS4300 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81053 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)