TSKS5412X01 GaAs Infrared Emitting Diode in Side View Package Description TSKS5412 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the TEKS5412 photodetector, allowing the user to assemble his own optical sensor. Features D Side view case with spherical lens D Radiation direction perpendicular to 14 354 mounting direction D D D D D D D D Angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm Case compatible with TEKS5412 Option X01: High rel. device for advanced applications Fan-fold packing according to IEC 286 part 2 Packing AMMOPACK: 2,000 pcs Ordering code number: TSKS5412X01ASZ Visual inspection according to QSV 5610 Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Rev. A6, 15-Oct-98 Test Conditions tp t x100 ms x 5 s, 2 mm from body Symbol VR IF IFSM PV Tj Tstg Tstg Tsd RthJA Value 6 100 2 170 100 –40...+85 –40...+100 260 450 Unit V mA A mW °C °C °C °C K/W 1 (7) TSKS5412X01 Basic Characteristics Tamb = 25_C Parameter Forward Voltage Reverse Voltage Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Fall Time Test Conditions IF = 100 mA, tp 20 ms IR = 10 mA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA x x x IF = 50 mA IF = 50 mA IF=1A, tp/T=0.01, tp IF=1A, tp/T=0.01, tp x10ms x10ms Symbol VF VVR Cj Ie fe Min Typ 1.3 Max 1.7 6 50 2.3 7 5 –1 ±30 950 50 400 450 TKfe ϕ lp Dl tr tf Unit V V pF mW/sr mW %/K deg nm nm ns ns Additional Test D 100% inspection of body with infrared camera. test criteria: no cracks allowed TSKS5412X01 / TEKS5412X01 matched (for Reference only) Parameters Input threshold current Hysteresis Output voltage Switching frequency Test Conditions VS1 = 5 V VS1 = 5 V IOL = 16 mA, IF > IFT VS1 = 5 V IF = 3 x IFT, RL = 1 kW VS1 = VS2 = 5 V Symbol IFT IFoff/IFon fsw Min. Typ. 1.5 80 0.2 200 Max. 0.4 Unit mA % V KHz Remark: Parameter tested with test fixture provided by Kostal (LENKWINKELSENSOR) 2 (7) Rev. A6, 15-Oct-98 TSKS5412X01 V S1 = 5 V IF 0 V S2 = 5 V R L = 1 kW IS1 R G = 50 W IO tp VO IR–Diode = 0.01 T tp = 10 ms Channel II Channel I 50 W Oscilloscope RL CL 96 12153 w 1 MW v 20 pF Figure 1. Test circuit 95 10819 50% IF o Channel I toff ton 90% VO o 10% Channel II tf tr Figure 2. Pulse diagram Rev. A6, 15-Oct-98 3 (7) TSKS5412X01 Typical Characteristics (Tamb = 25_C unless otherwise specified) 1.5 150 RthJA 100 50 1.3 1.2 1.1 1.0 0.9 0 0 20 40 60 80 0.8 –45 –30 –15 100 Tamb – Ambient Temperature ( °C ) 14846 I e – Radiant Intensity ( mW/sr ) Forward Current ( mA ) 100 RthJA 75 50 25 I F– 30 45 60 75 90 100 0 10 1 tp / T = 0.001 tp = 100 ms 0.1 0.01 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 14847 100 94 7913 e Figure 4. Forward Current vs. Ambient Temperature 101 102 103 IF – Forward Current ( mA ) 104 Figure 7. Radiant Intensity vs. Forward Current 104 1000 103 Fe – Radiant Power ( mW ) IF – Forward Current ( mA ) 15 Figure 6. Relative Forward Voltage vs. Ambient Temperature 125 102 101 100 10–1 100 10 1 0.1 0 1 2 3 4 VF – Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage 4 (7) 0 Tamb – Ambient Temperature ( °C ) 14347 Figure 3. Power Dissipation vs. Ambient Temperature 94 7996 e IF = 10 mA 1.4 VFrel – Relative Forward Voltage P V – Power Dissipation ( mW ) 200 100 94 7914 e 101 102 103 IF – Forward Current ( mA ) 104 Figure 8. Radiant Power vs. Forward Current Rev. A6, 15-Oct-98 TSKS5412X01 0° I e rel – Relative Radiant Intensity 1.6 IF = 10 mA 1.4 I e rel ; Fe rel 1.2 1.0 0.8 0.6 0.4 0.2 0 15 30 45 60 75 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 90 Tamb – Ambient Temperature ( °C ) 0.6 0.4 0.2 0 0.2 0.4 0.6 14349 Figure 9. Rel. Radiant Intensity\Power vs. Ambient Temperature Figure 11. Relative Radiant Intensity vs. Angular Displacement 110 1.25 100 1.0 I e in % of initial value Fe rel – Relative Radiant Power 20 ° 80° 0 –45 –30 –15 14348 10 ° 0.75 0.5 0.25 94 7994 e 70 60 50 40 30 950 IF = 10 mA DC, Tamb = 85°C 10 0 0 1000 l – Wavelength ( nm ) Figure 10. Relative Radiant Power vs. Wavelength Rev. A6, 15-Oct-98 80 20 IF = 100 mA 0 900 90 14884 400 800 1200 1600 2000 Test duration Figure 12 Typical degradation of Ie vs. Test duration 5 (7) TSKS5412X01 Dimensions in mm 14307 6 (7) Rev. A6, 15-Oct-98 TSKS5412X01 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A6, 15-Oct-98 7 (7)