VISHAY TSHA520

TSHA520.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾)
Package
Description
94 8390
The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
Features
D
D
D
D
D
D
D
Extra high radiant power and radiant intensity
Suitable for high pulse current operation
Standard T–1¾ (ø 5 mm) package
Angle of half intensity ϕ = ± 12°
Peak wavelength lp = 875 nm
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance requirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81019
Rev. 2, 20-May-99
Test Conditions
tp/T = 0.5, tp = 100 ms
tp = 100 ms
t
x 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
2.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
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TSHA520.
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Temp. Coefficient of VF
Reverse Current
Junction Capacitance
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Fall Time
Test Conditions
IF = 100 mA, tp = 20 ms
IF = 100mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA
Symbol
VF
TKVF
IR
Cj
TKfe
ϕ
Min
Max
1.8
100
20
–0.7
±12
875
80
0.2
600
300
600
300
lp
Dl
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
Typ
1.5
–1.6
TKlp
tr
tr
tf
tf
Unit
V
mV/K
mA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Forward Voltage
g
Test Conditions
IF=1.5A, tp=100ms
IF=100mA,
tp=20ms
Radiant Intensity
IF=1.5A, tp=100ms
Radiant Power
IF=100mA,
tp=20ms
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Type
TSHA5200/5201
TSHA5202/5203
TSHA5200
TSHA5201
TSHA5202
TSHA5203
TSHA5200
TSHA5201
TSHA5202
TSHA5203
TSHA5200
TSHA5201
TSHA5202
TSHA5203
Symbol
VF
VF
Ie
Ie
Ie
Ie
Ie
Ie
Ie
Ie
fe
fe
fe
fe
Min
25
30
36
50
300
400
500
600
Typ
3.2
3.2
40
50
60
65
500
600
700
800
22
23
24
25
Max
4.9
4.5
Unit
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
mW
Document Number 81019
Rev. 2, 20-May-99
TSHA520.
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
250
200
150
RthJA
100
50
0
0
20
40
60
80
102
0
1
2
4
3
VF – Forward Voltage ( V )
94 8005 e
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
1.2
V Frel – Relative Forward Voltage
125
IF – Forward Current ( mA )
103
101
100
Tamb – Ambient Temperature ( °C )
94 7957 e
tp = 100 ms
tp / T = 0.001
100
75
50
25
0
1.1
IF = 10 mA
1.0
0.9
0.8
0.7
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
94 8002 e
0
Figure 2. Forward Current vs. Ambient Temperature
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
94 7990 e
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
101
1000
I e – Radiant Intensity ( mW/sr )
I F – Forward Current ( A )
TSHA 5203
IFSM = 2.5 A ( Single Pulse )
tp / T = 0.01
100
0.05
0.1
0.2
TSHA 5202
100
TSHA 5201
10
TSHA 5200
0.5
10–1
10–2
94 8003 e
1
10–1
100
101
tp – Pulse Duration ( ms )
102
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81019
Rev. 2, 20-May-99
100
94 8006 e
101
102
103
IF – Forward Current ( mA )
104
Figure 6. Radiant Intensity vs. Forward Current
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TSHA520.
Vishay Telefunken
1.25
Fe – Relative Radiant Power
Fe – Radiant Power ( mW )
1000
100
10
1
1.0
0.75
0.5
0.25
IF = 100 mA
0
780
0.1
100
101
102
103
IF – Forward Current ( mA )
94 8007 e
104
Fe ( l ) rel = Fe ( l ) / Fe ( lp )
Figure 7. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0°
I e rel – Relative Radiant Intensity
1.6
I e rel ; Fe rel
1.2
IF = 20 mA
0.8
0.4
980
880
l – Wavelength ( nm )
94 8000 e
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
–10 0 10
94 8020 e
50
100
140
Tamb – Ambient Temperature ( °C )
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
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0.6
0.4
0.2
0
0.2
0.4
0.6
94 8008 e
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
Document Number 81019
Rev. 2, 20-May-99
TSHA520.
Vishay Telefunken
Dimensions in mm
96 12121
Document Number 81019
Rev. 2, 20-May-99
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TSHA520.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 81019
Rev. 2, 20-May-99