MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V BSZ042N06NS DataSheet Rev.2.3 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V BSZ042N06NS 1Description TSDSON-8FL (enlarged source interconnection) Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 4.2 mΩ ID 40 A QOSS 32 nC QG(0V..10V) 27 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ042N06NS PG-TSDSON-8 FL 042N06N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 40 40 17 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=60K/W1) - 160 A TC=25°C - - 130 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RthJA=60K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm2 cooling area1) Values Min. Typ. Max. RthJC - 1.1 1.8 K/W - RthJA - - 60 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=36µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.4 4.9 4.2 6.3 mΩ VGS=10V,ID=20A VGS=6V,ID=5A Gate resistance1) RG - 1.6 2.4 Ω - Transconductance gfs 27 54 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 2000 2500 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 490 612.5 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 22 44 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 10 - ns VDD=30V,VGS=10V,ID=20A, RG,ext,ext=1.7Ω Rise time tr - 7 - ns VDD=30V,VGS=10V,ID=20A, RG,ext,ext=1.7Ω Turn-off delay time td(off) - 19 - ns VDD=30V,VGS=10V,ID=20A, RG,ext,ext=1.7Ω Fall time tf - 6 - ns VDD=30V,VGS=10V,ID=20A, RG,ext,ext=1.7Ω 1) Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Gate charge at threshold Values Unit Note/TestCondition - nC VDD=30V,ID=20A,VGS=0to10V 5 - nC VDD=30V,ID=20A,VGS=0to10V - 5 7 nC VDD=30V,ID=20A,VGS=0to10V Qsw - 8 - nC VDD=30V,ID=20A,VGS=0to10V Gate charge total Qg - 27 32 nC VDD=30V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=30V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to10V Qoss - 32 40 nC VDD=30V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 9 Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 40 A TC=25°C IS,pulse - - 160 A TC=25°C VSD - 0.9 1.2 V VGS=0V,IF=20A,Tj=25°C trr - 33 53 ns VR=30V,IF=20A,diF/dt=100A/µs Qrr - 33 - nC VR=30V,IF=20A,diF/dt=100A/µs See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 6 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 50 40 60 ID[A] Ptot[W] 30 40 20 20 10 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 102 100 1 µs 0.5 10 µs ZthJC[K/W] 0.2 ID[A] 100 µs 1 10 1 ms 10 ms DC 0.1 10 -1 0.05 0.02 0.01 single pulse 100 10-1 10-1 10-2 100 101 102 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 12 10 V 7 V 5V 5.5 V 6V 140 10 120 RDS(on)[mΩ] ID[A] 8 5.5 V 100 80 60 5V 6V 6 7V 4 10 V 40 2 20 0 0.0 0.5 1.0 1.5 0 2.0 0 40 80 VDS[V] 120 160 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 120 140 100 120 80 gfs[S] ID[A] 100 80 60 60 40 40 20 20 0 150 °C 0 2 25 °C 4 6 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 8 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 8 5 7 4 6 max 3 VGS(th)[V] RDS(on)[mΩ] 5 4 typ 3 360 µA 36 µA 2 2 1 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C Ciss 3 102 IF[A] C[pF] 10 Coss 102 101 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 12 30 V 10 12 V 101 100 °C 25 °C 8 IAV[A] VGS[V] 125 °C 48 V 100 6 4 2 10-1 100 101 102 103 0 0 tAV[µs] 10 20 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS 6PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 11 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V BSZ042N06NS RevisionHistory BSZ042N06NS Revision:2014-11-10,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2014-11-10 Rev.2.3 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.3,2014-11-10