Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level 1) • Qualified according to JEDEC for target applications VDS 60 V RDS(on),max 1.4 mW ID 180 A QOSS 119 nC QG(0V..10V) 106 nC • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB014N06N Package TO263-7 Marking 014N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 180 V GS=10 V,T C=100 °C 180 V GS=10 V, T C=25 °C, R thJA =50K/W 34 Unit A Pulsed drain current2) I D,pulse T C=25 °C 720 Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W 420 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 1 2012-12-20 IPB014N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature Value T C=25 °C 214 T A=25 °C, R thJA=50 K/W 3.0 T j, T stg W -55 ... 175 IEC climatic category; DIN IEC 68-1 Parameter Unit °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 0.7 minimal footprint - - 62 6 cm² cooling area4) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=143 µA 2.1 2.8 3.3 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.5 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=60 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 1.2 1.4 mW V GS=6 V, I D=25 A - 1.5 2.1 - 1.6 2.4 W 120 230 - S Gate resistance RG Transconductance g fs Rev. 2.2 |V DS|>2|I D|R DS(on)max, I D=100 A page 2 2012-12-20 IPB014N06N Parameter Values Symbol Conditions Unit min. typ. max. - 7800 9750 - 1800 2250 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 69 138 Turn-on delay time t d(on) - 22 - Rise time tr - 18 - Turn-off delay time t d(off) - 47 - Fall time tf - 14 - Gate to source charge Q gs - 35 - Gate charge at threshold Q g(th) - 22 - Gate to drain charge Q gd - 19 25 Switching charge Q sw - 32 - Gate charge total Qg - 106 124 Gate plateau voltage V plateau - 4.5 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 94 - nC Output charge Q oss V DD=30 V, V GS=0 V - 119 - - - 180 - - 720 - 0.9 1.2 V - 67 107 ns - 112 - nC V DD=30 V, V GS=10 V, I D=100 A, R G,ext,ext=1.6 W ns Gate Charge Characteristics5) V DD=30 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) A T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=30 V, I F=100A , di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2012-12-20 IPB014N06N 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 220 200 200 180 180 160 160 140 120 120 ID [A] Ptot [W] 140 100 100 80 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 0 200 25 50 75 100 125 150 175 200 TC [°C] TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 1 1 µs limited by on-state resistance 10 µs 0.5 100 µs 102 0.2 0.1 0.1 ZthJC [K/W] 1 ms ID [A] 10 ms 101 DC 0.05 0.02 0.01 0.01 single pulse 100 10-1 10-1 100 101 102 VDS [V] Rev. 2.2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 tp [s] page 4 2012-12-20 IPB014N06N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 720 5 10 V 640 4 560 6V 5.5 V 7V 400 RDS(on) [mW] ID [A] 480 5V 5.5 V 320 3 6V 2 240 5V 7V 10 V 160 1 80 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 80 160 240 320 400 480 560 640 720 VDS [V] ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 720 300 640 250 560 200 400 gfs [S] ID [A] 480 320 240 150 100 160 50 80 175 °C 25 °C 0 0 0 2 4 6 8 VGS [V] Rev. 2.2 0 20 40 60 80 100 120 140 160 180 ID [A] page 5 2012-12-20 IPB014N06N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 3.5 5 3 4 3 2 VGS(th) [V] RDS(on) [mW] 2.5 max 1.5 typ 1430 mA 143 µA 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 10000 Ciss Coss 102 1000 IF [A] C [pF] 103 25 °C 175 °C 102 101 100 Crss 101 100 10 0 20 40 60 VDS [V] Rev. 2.2 0 0.5 1 1.5 2 VSD [V] page 6 2012-12-20 IPB014N06N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 12 30 V 10 12 V 100 48 V 8 25 °C VGS [V] IAV [A] 100 °C 125 °C 10 6 4 2 1 1 10 100 0 1000 0 20 tAV [µs] 40 60 80 100 120 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg VBR(DSS) [V] 66 62 V gs(th) 58 54 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.2 page 7 2012-12-20 IPB014N06N Package Outline Rev. 2.2 TO 263-7 page 8 2012-12-20 IPB014N06N Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 9 2012-12-20