IPD65R1K4C6 Data Sheet (1.7 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6650V
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
DataSheet
Rev.2.0
Final
Industrial&Multimarket
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
1Description
DPAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
tab
1
2
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Applications
HardswitchingPWMstagesandresonantswitchingPWMstagesfore.g.
PCSilverbox,Adapter,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj max
700
V
RDS(on),max
1.4
Ω
Qg,typ
10.5
nC
ID,pulse
8.3
A
Eoss @ 400V
1.15
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
Marking
IPD65R1K4C6
PG-TO 252
65C61K4
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current 1)
ID
Values
Min.
Typ.
Max.
3.2
Unit
Note/TestCondition
A
TC=25°C
TC=100°C
2.0
ID‚pulse
8.3
A
TC=25°C
Avalanche energy, single pulse
EAS
26
mJ
ID=0.6A,VDD=50V
(see table 10)
Avalanche energy, repetitive
EAR
0.10
mJ
ID=0.6A,VDD=50V
Avalanche current, repetitive
IAR
0.6
A
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
VDS=0...480V
Gate source voltage
VGS
-20
20
V
static
-30
30
-55
150
°C
Pulsed drain current
2)
AC (f > 1 Hz)
Operating and storage temperature
Tj‚Tstg
Continuous diode forward current
IS
2.8
A
TC=25°C
Diode pulse current
IS‚pulse
8.3
A
TC=25°C
Reverse diode dv/dt 3)
dv/dt
15
V/ns
Maximum diode commutation speed
dif/dt
500
A/µs
VDS=0...400V,ISD≤ID,
Tj=25°C
(see table 8)
Power dissipation
Ptot
28
W
TC=25°C
1)
Limited by Tj max. Maximum duty cycle D=0.75
Pulse width tp limited by Tj max
3)
Identical low side and high side switch with identical RG
2)
Final Data Sheet
4
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
3Thermalcharacteristics
Table3ThermalcharacteristicsDPAK
Parameter
Symbol
Thermal resistance, junction - case
Thermal resistance, junction - ambient
1)
Values
Min.
Typ.
Max.
Unit
RthJC
4.4
°C/W
RthJA
62
°C/W leaded
SMD version, device on PCB,
6cm² cooling area
35
Soldering temperature, wave- &
reflowsoldering allowed
Note/TestCondition
Tsold
260
°C
1.6 mm (0.063 in.) from case for
10s
1)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
5
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
650
Gate threshold voltage
VGS(th)
2.5
Zero gate voltage drain current
IDSS
Min.
Typ.
3
Unit
Note/TestCondition
V
VGS=0V,ID=1mA
3.5
V
VDS=VGS,ID=0.1mA
1
µA
VDS=650V,VGS=0V,Tj=25°C
Max.
VDS=650V,VGS=0V,Tj=150°C
10
Gate-source leakage current
IGSS
Drain-source on-state resistance
RDS(on)
1.260
100
nA
VGS=20V,VDS=0V
1.4
Ω
VGS=10V,ID=1.0A,Tj=25°C
VGS=10V,ID=1A,Tj=150°C
3.280
Gate resistance
RG
6.5
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
VGS=0V,VDS=100V,f=1MHz
Table5Dynamiccharacteristics
Values
Parameter
Symbol
Input capacitance
Ciss
225
pF
Output capacitance
Coss
18
pF
Effective output capacitance, energy
related 1)
Co(er)
10
pF
VGS=0V,VDS=0...480V
Effective output capacitance, time related
Co(tr)
42
pF
ID=constant,VGS=0V,
VDS=0...480V
Turn-on delay time
td(on)
7.7
ns
Rise time
tr
5.9
ns
Turn-off delay time
td(off)
33
ns
Fall time
tf
18.2
ns
2)
Min.
Typ.
Max.
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω
(see table 9)
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Qgs
Gate to drain charge
Values
Unit
Note/TestCondition
1.3
nC
Qgd
5.8
nC
VDD=480V,ID=1.5A,
VGS=0to10V
Gate charge total
Qg
10.5
nC
Gate plateau voltage
Vplateau
5.4
V
1)
2)
Min.
Typ.
Max.
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
6
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
VSD
Reverse recovery time
Values
Unit
Note/TestCondition
0.9
V
VGS=0V,IF=1.5A,Tj=25°C
trr
200
ns
Reverse recovery charge
Qrr
0.9
µC
VR=400V,IF=1.5A,
diF/dt=100A/µs
(see table 8)
Peak reverse recovery current
Irrm
8
A
Final Data Sheet
Min.
7
Typ.
Max.
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Max.transientthermalimpedance
101
30
25
0.5
100
20
0.2
ZthJC[K/W]
Ptot[W]
0.1
15
0.05
0.02
0.01
single pulse
10-1
10
5
0
0
40
80
120
10-2
160
10-5
10-4
10-3
TC[°C]
10-2
Ptot=f(TC)
ZthJC=f(tP);parameter:D=tp/T
Diagram3:Safeoperatingarea
Diagram4:Safeoperatingarea
2
102
10
1 µs
101
101
1 µs
10 µs
10 µs
100 µs
100
ID[A]
ID[A]
10-1
tp[s]
100
100 µs
1 ms
1 ms
10 ms
10-1
10 ms
10-1
DC
DC
10-2
100
101
102
103
VDS[V]
100
101
102
103
VDS[V]
ID=f(VDS);VGS>7V;TC=25°C;D=0;parameter:tp
Final Data Sheet
10-2
ID=f(VDS);VGS>7V;TC=80°C;D=0;parameter:tp
8
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
12
7
20 V
6
20 V
10
10 V
10 V
8V
5
8
8V
7V
6
ID[A]
ID[A]
4
7V
3
6V
4
5V
5.5 V
2
1
5V
4.5 V
0
0
5
10
15
5.5 V
2
6V
0
20
4.5 V
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
8
4
7
3
5
5 V 5.5V
6V
6.5 V
RDS(on)[Ω]
RDS(on)[Ω]
6
7V
10 V
4
3
2
typ
98%
1
2
1
0
1
2
3
4
5
6
0
-60
-20
20
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=1.0A;VGS=10V
9
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
10
10
9
25 °C
8
8
120 V
7
VGS[V]
6
ID[A]
6
480 V
150 °C
4
5
4
3
2
2
1
0
0
2
4
6
8
0
10
0
5
VGS[V]
10
15
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD
Diagram11:Avalancheenergy
Diagram12:Drain-sourcebreakdownvoltage
30
750
725
25
700
20
VBR(DSS)[V]
EAS[mJ]
675
15
650
625
10
600
5
575
0
0
50
100
150
200
550
-60
-20
Tj[°C]
60
100
140
180
Tj[°C]
EAS=f(Tj);ID=0.6A;VDD=50V
Final Data Sheet
20
VBR(DSS)=f(Tj);ID=1.0mA
10
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
Diagram13:Typ.capacitances
Diagram14:Typ.Cossstoredenergy
104
2.00
1.80
1.60
103
1.40
1.20
Eoss[µJ]
C[pF]
Ciss
102
1.00
0.80
Coss
0.60
101
0.40
0.20
Crss
100
0
100
200
300
400
500
600
0.00
0
VDS[V]
100
200
300
400
500
600
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Eoss=f(VDS)
Diagram15:Forwardcharacteristicsofreversediode
IF[A]
101
125 °C
25 °C
100
10-1
0.0
0.5
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
11
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
td(off)
tr
ton
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
7PackageOutlines
Figure1OutlinePG-TO252,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
8AppendixA
Table11RelatedLinks
• IFXC6ProductBrief:www.infineon.com
• IFXC6Portfolio:www.infineon.com
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesignTools:www.infineon.com
Final Data Sheet
14
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6
RevisionHistory
IPD65R1K4C6
Revision:2013-07-26,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2013-07-26
Release of final version
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
[email protected]
Edition2011-08-01
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2011InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.0,2013-07-26