IPD65R250E6 Data Sheet (1.7 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6650V
650VCoolMOS™E6PowerTransistor
IPD65R250E6
DataSheet
Rev.2.2
Final
Industrial&Multimarket
650VCoolMOS™E6PowerTransistor
IPD65R250E6
1Description
DPAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™E6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
tab
1
2
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,
TelecomandUPS.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj max
700
V
RDS(on),max
0.25
Ω
Qg,typ
45
nC
ID,pulse
46
A
Eoss @ 400V
3.7
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
Marking
IPD65R250E6
PG-TO 252
65E6250
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current 1)
ID
Values
Min.
Typ.
Max.
16.1
Unit
Note/TestCondition
A
TC=25°C
TC=100°C
11.3
ID‚pulse
46
A
TC=25°C
Avalanche energy, single pulse
EAS
290
mJ
ID=2.4A,VDD=50V
Avalanche energy, repetitive
EAR
0.44
mJ
ID=2.4A,VDD=50V
Avalanche current, repetitive
IAR
2.4
A
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20
20
V
static
-30
30
-55
150
°C
Pulsed drain current
2)
AC (f > 1 Hz)
Operating and storage temperature
Tj‚Tstg
Continuous diode forward current
IS
17.9
A
TC=25°C
Diode pulse current
IS‚pulse
46
A
TC=25°C
dv/dt
15
V/ns
Maximum diode commutation speed
dif/dt
500
A/µs
VDS=0...400V,ISD≤ID,
Tj=25°C
Power dissipation (non FullPAK)
Ptot
208
W
Reverse diode dv/dt
3)
Tc = 25ºC
1)
Limited by Tj max. Maximum duty cycle D=0.75
Pulse width tp limited by Tj max
3)
Vpeak<V(BR)DSS, Tj<Tj max, identical low and high side switch with same Rg
2)
Final Data Sheet
4
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
3Thermalcharacteristics
Table3ThermalcharacteristicsDPAK
Values
Parameter
Symbol
Thermal resistance, junction - case
RthJC
0.6
°C/W
Thermal resistance, junction - ambient 1) RthJA
62
°C/W
Min.
Typ.
Max.
Unit
Tsold
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB,
6cm² cooling area
35
Soldering temperature, wave- &
reflowsoldering allowed
Note/TestCondition
260
°C
reflow MSL
1)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
5
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
650
Gate threshold voltage
VGS(th)
2.5
Zero gate voltage drain current
IDSS
Min.
Typ.
3
Unit
Note/TestCondition
V
VGS=0V,ID=1mA
3.5
V
VDS=VGS,ID=0.4mA
1
µA
VDS=650V,VGS=0V,Tj=25°C
Max.
VDS=650V,VGS=0V,Tj=150°C
10
Gate-source leakage current
IGSS
Drain-source on-state resistance
RDS(on)
0.230
100
nA
VGS=20V,VDS=0V
0.25
Ω
VGS=10V,ID=4.4A,Tj=25°C
VGS=10V,ID=4.4A,Tj=150°C
0.590
Gate resistance
RG
7
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
VGS=0V,VDS=100V,f=1MHz
Table5Dynamiccharacteristics
Values
Parameter
Symbol
Input capacitance
Ciss
950
pF
Output capacitance
Coss
60
pF
Effective output capacitance, energy
related 1)
Co(er)
40
pF
VGS=0V,VDS=0...480V
Effective output capacitance, time related
Co(tr)
183
pF
ID=constant,VGS=0V,
VDS=0...480V
Turn-on delay time
td(on)
11
ns
Rise time
tr
9
ns
VDD=400V,VGS=13V,ID=6.6A,
RG=3.4Ω
Turn-off delay time
td(off)
76
ns
Fall time
tf
9
ns
2)
Min.
Typ.
Max.
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Qgs
Gate to drain charge
Values
Unit
Note/TestCondition
5
nC
Qgd
24
nC
VDD=480V,ID=6.6A,
VGS=0to10V
Gate charge total
Qg
45
nC
Gate plateau voltage
Vplateau
5.5
V
1)
2)
Min.
Typ.
Max.
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
6
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
VSD
Reverse recovery time
Values
Unit
Note/TestCondition
0.9
V
VGS=0V,IF=6.6A,Tj=25°C
trr
260
ns
Reverse recovery charge
Qrr
2.4
µC
VR=400V,IF=6.6A,
diF/dt=100A/µs
Peak reverse recovery current
Irrm
18
A
Final Data Sheet
Min.
7
Typ.
Max.
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
250
1 µs
200
10 µs
101
100 µs
ID[A]
Ptot[W]
150
1 ms
100
DC/10 ms
100
10-1
50
0
0
40
80
120
10-2
160
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;VGS>7V;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
0.5
0.2
1 µs
101
0.1
10 µs
0.05
100
100
ZthJC[K/W]
ID[A]
100 µs
1 ms
DC/10 ms
0.02
0.01
single pulse
10-1
10-1
10-2
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;VGS>7V;<D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
60
35
20 V
20 V
10 V
10 V
30
50
8V
8V
25
7V
7V
6V
6V
20
5.5 V
30
5.5 V
ID[A]
ID[A]
40
5V
5V
15
4.5 V
4.5 V
20
10
10
0
5
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
1.00
0.70
0.90
0.60
0.80
0.50
0.60
5V
5.5 V
6V
6.5 V
10
7V
0.50
0.40
98%
typ
0.30
0.20
0.40
0.10
0.30
0.20
RDS(on)[Ω]
RDS(on)[Ω]
0.70
0
5
10
15
20
0.00
-60
-20
20
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=4,4A;VGS=10V
9
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
50
10
25 °C
9
40
8
35
7
30
6
25
150 °C
VGS[V]
ID[A]
45
4
15
3
10
2
5
1
0
2
4
6
8
0
10
480 V
5
20
0
120 V
0
10
VGS[V]
20
30
40
50
160
200
Qgate[nC]
ID=f(VGS);|VDS|=20V;
VGS=f(Qgate);ID=6.6Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
350
300
125 °C
25 °C
250
IF[A]
EAS[mJ]
101
200
150
100
100
50
10-1
0.0
0.5
1.0
1.5
0
0
40
VSD[V]
120
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
80
EAS=f(Tj);ID=2,4A;VDD=50V
10
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
760
740
720
Ciss
103
700
660
C[pF]
VBR(DSS)[V]
680
640
102
Coss
620
600
Crss
101
580
560
540
-60
-20
20
60
100
140
180
100
0
100
200
Tj[°C]
300
400
500
600
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
4
Eoss[µJ]
3
2
1
0
0
100
200
300
400
500
600
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
td(off)
tr
ton
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
7PackageOutlines
Figure1OutlinePG-TO252,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
8AppendixA
Table11RelatedLinks
• IFXC6ProductBrief:www.infineon.com
• IFXC6Portfolio:www.infineon.com
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesignTools:www.infineon.com
Final Data Sheet
14
Rev.2.2,2013-07-30
650VCoolMOS™E6PowerTransistor
IPD65R250E6
RevisionHistory
IPD65R250E6
Revision:2013-07-30,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2011-07-08
release of final datasheet
2.2
2013-07-30
add halogen free mold compound logo
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
[email protected]
Edition2011-08-01
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2011InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.2,2013-07-30