MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6650V 650VCoolMOS™E6PowerTransistor IPD65R250E6 DataSheet Rev.2.2 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPD65R250E6 1Description DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™E6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. tab 1 2 3 Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2 Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, TelecomandUPS. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 0.25 Ω Qg,typ 45 nC ID,pulse 46 A Eoss @ 400V 3.7 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPD65R250E6 PG-TO 252 65E6250 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) ID Values Min. Typ. Max. 16.1 Unit Note/TestCondition A TC=25°C TC=100°C 11.3 ID‚pulse 46 A TC=25°C Avalanche energy, single pulse EAS 290 mJ ID=2.4A,VDD=50V Avalanche energy, repetitive EAR 0.44 mJ ID=2.4A,VDD=50V Avalanche current, repetitive IAR 2.4 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V Gate source voltage VGS -20 20 V static -30 30 -55 150 °C Pulsed drain current 2) AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg Continuous diode forward current IS 17.9 A TC=25°C Diode pulse current IS‚pulse 46 A TC=25°C dv/dt 15 V/ns Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V,ISD≤ID, Tj=25°C Power dissipation (non FullPAK) Ptot 208 W Reverse diode dv/dt 3) Tc = 25ºC 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj max 3) Vpeak<V(BR)DSS, Tj<Tj max, identical low and high side switch with same Rg 2) Final Data Sheet 4 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK Values Parameter Symbol Thermal resistance, junction - case RthJC 0.6 °C/W Thermal resistance, junction - ambient 1) RthJA 62 °C/W Min. Typ. Max. Unit Tsold SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 35 Soldering temperature, wave- & reflowsoldering allowed Note/TestCondition 260 °C reflow MSL 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Parameter Symbol Drain-source breakdown voltage V(BR)DSS 650 Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Min. Typ. 3 Unit Note/TestCondition V VGS=0V,ID=1mA 3.5 V VDS=VGS,ID=0.4mA 1 µA VDS=650V,VGS=0V,Tj=25°C Max. VDS=650V,VGS=0V,Tj=150°C 10 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) 0.230 100 nA VGS=20V,VDS=0V 0.25 Ω VGS=10V,ID=4.4A,Tj=25°C VGS=10V,ID=4.4A,Tj=150°C 0.590 Gate resistance RG 7 Ω f=1MHz,opendrain Unit Note/TestCondition VGS=0V,VDS=100V,f=1MHz Table5Dynamiccharacteristics Values Parameter Symbol Input capacitance Ciss 950 pF Output capacitance Coss 60 pF Effective output capacitance, energy related 1) Co(er) 40 pF VGS=0V,VDS=0...480V Effective output capacitance, time related Co(tr) 183 pF ID=constant,VGS=0V, VDS=0...480V Turn-on delay time td(on) 11 ns Rise time tr 9 ns VDD=400V,VGS=13V,ID=6.6A, RG=3.4Ω Turn-off delay time td(off) 76 ns Fall time tf 9 ns 2) Min. Typ. Max. Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Qgs Gate to drain charge Values Unit Note/TestCondition 5 nC Qgd 24 nC VDD=480V,ID=6.6A, VGS=0to10V Gate charge total Qg 45 nC Gate plateau voltage Vplateau 5.5 V 1) 2) Min. Typ. Max. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 6 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage VSD Reverse recovery time Values Unit Note/TestCondition 0.9 V VGS=0V,IF=6.6A,Tj=25°C trr 260 ns Reverse recovery charge Qrr 2.4 µC VR=400V,IF=6.6A, diF/dt=100A/µs Peak reverse recovery current Irrm 18 A Final Data Sheet Min. 7 Typ. Max. Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 250 1 µs 200 10 µs 101 100 µs ID[A] Ptot[W] 150 1 ms 100 DC/10 ms 100 10-1 50 0 0 40 80 120 10-2 160 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;VGS>7V;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 0.5 0.2 1 µs 101 0.1 10 µs 0.05 100 100 ZthJC[K/W] ID[A] 100 µs 1 ms DC/10 ms 0.02 0.01 single pulse 10-1 10-1 10-2 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;VGS>7V;<D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 60 35 20 V 20 V 10 V 10 V 30 50 8V 8V 25 7V 7V 6V 6V 20 5.5 V 30 5.5 V ID[A] ID[A] 40 5V 5V 15 4.5 V 4.5 V 20 10 10 0 5 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.00 0.70 0.90 0.60 0.80 0.50 0.60 5V 5.5 V 6V 6.5 V 10 7V 0.50 0.40 98% typ 0.30 0.20 0.40 0.10 0.30 0.20 RDS(on)[Ω] RDS(on)[Ω] 0.70 0 5 10 15 20 0.00 -60 -20 20 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=4,4A;VGS=10V 9 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 50 10 25 °C 9 40 8 35 7 30 6 25 150 °C VGS[V] ID[A] 45 4 15 3 10 2 5 1 0 2 4 6 8 0 10 480 V 5 20 0 120 V 0 10 VGS[V] 20 30 40 50 160 200 Qgate[nC] ID=f(VGS);|VDS|=20V; VGS=f(Qgate);ID=6.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 350 300 125 °C 25 °C 250 IF[A] EAS[mJ] 101 200 150 100 100 50 10-1 0.0 0.5 1.0 1.5 0 0 40 VSD[V] 120 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 80 EAS=f(Tj);ID=2,4A;VDD=50V 10 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 760 740 720 Ciss 103 700 660 C[pF] VBR(DSS)[V] 680 640 102 Coss 620 600 Crss 101 580 560 540 -60 -20 20 60 100 140 180 100 0 100 200 Tj[°C] 300 400 500 600 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 4 Eoss[µJ] 3 2 1 0 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 13 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 8AppendixA Table11RelatedLinks • IFXC6ProductBrief:www.infineon.com • IFXC6Portfolio:www.infineon.com • IFXCoolMOSWebpage:www.infineon.com • IFXDesignTools:www.infineon.com Final Data Sheet 14 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 RevisionHistory IPD65R250E6 Revision:2013-07-30,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2011-07-08 release of final datasheet 2.2 2013-07-30 add halogen free mold compound logo WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.2,2013-07-30