MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R660E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R660E6 1Description ThinPAK8x8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™E6series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whileofferinganextremelyfastandrobustbodydiode.Thiscombination ofextremelylowswitching,commutationandconductionlossestogether withhighestrobustnessmakeespeciallyresonantswitchingapplications morereliable,moreefficient,lighterandcooler. ThinPAK ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Features Power Source Pin 3,4 •Reducedboardspaceconsumption •Increasedpowerdensity •Shortcommutationloop •Smoothswitchingwaveform •easytouseproducts •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Pb-freeplating,Halogenfree •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCDTV,Lighting,Server,Telecom. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 0.66 Ω Qg,typ 23 nC ID,pulse 16 A Eoss @ 400V 1.9 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPL65R660E6 PG-VSON-4 65E6660 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) ID Values Min. Typ. Max. 7.0 Unit Note/TestCondition A TC=25°C TC=100°C 4.4 ID‚pulse 16 A TC=25°C Avalanche energy, single pulse EAS 142 mJ ID=1.3A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.21 mJ ID=1.3A,VDD=50V Avalanche current, repetitive IAR 1.3 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V Gate source voltage VGS -20 20 V static -30 30 -40 150 °C Pulsed drain current 2) AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg Continuous diode forward current IS 6.0 A TC=25°C Diode pulse current IS‚pulse 16 A TC=25°C dv/dt 15 V/ns Maximum diode commutation speed dif/dt 500 Power dissipation Ptot 63 Reverse diode dv/dt 3) VDS=0...400V,ISD≤ID, Tj=25°C A/µs (see table 8) W TC=25°C 1) Limited by Tj max. Maximum duty cycle D=0,75 Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 4 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 3Thermalcharacteristics Table3ThermalcharacteristicsThinPAK8x8 Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Thermal resistance, junction - ambient 1) RthJA Typ. Max. Unit 2 °C/W 65 °C/W Tsold 260 SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 45 Soldering temperature, wave- & reflowsoldering allowed Note/TestCondition °C reflow MSL 3 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Parameter Symbol Drain-source breakdown voltage V(BR)DSS 650 Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Min. Typ. 3 Unit Note/TestCondition V VGS=0V,ID=1mA 3.5 V VDS=VGS,ID=0.2mA 1 µA VDS=650V,VGS=0V,Tj=25°C Max. VDS=650V,VGS=0V,Tj=150°C 10 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) 0.594 100 nA VGS=20V,VDS=0V 0.66 Ω VGS=10V,ID=2.1A,Tj=25°C VGS=10V,ID=2.1A,Tj=150°C 1.544 Gate resistance RG 5 Ω f=1MHz,opendrain Unit Note/TestCondition VGS=0V,VDS=100V,f=1MHz Table5Dynamiccharacteristics Values Parameter Symbol Input capacitance Ciss 440 pF Output capacitance Coss 30 pF Effective output capacitance, energy related 1) Co(er) 21 pF VGS=0V,VDS=0...480V Effective output capacitance, time related 2) Co(tr) 88 pF ID=constant,VGS=0V, VDS=0...480V Turn-on delay time td(on) 10 ns Rise time tr 8 ns Turn-off delay time td(off) 64 ns Fall time tf 11 ns Min. Typ. Max. VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω (see table 9) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Qgs Gate to drain charge Values Unit Note/TestCondition 2.75 nC Qgd 12 nC VDD=480V,ID=3.2A, VGS=0to10V Gate charge total Qg 23 nC Gate plateau voltage Vplateau 5.5 V 1) 2) Min. Typ. Max. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 6 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage VSD Reverse recovery time Values Unit Note/TestCondition 0.9 V VGS=0V,IF=3.2A,Tj=25°C trr 270 ns Reverse recovery charge Qrr 2 µC VR=400V,IF=3.2A, diF/dt=100A/µs (see table 8) Peak reverse recovery current Irrm 13 A Final Data Sheet Min. 7 Typ. Max. Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 70 1 µs 60 10 1 10 µs 100 µs 100 40 1 ms ID[A] Ptot[W] 50 30 10 ms 10-1 20 DC 10-2 10 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 101 10 µs 100 100 ID[A] 1 ms 10 ms 10-1 0.1 0.05 0.02 10-1 10-3 100 101 102 0.01 single pulse DC 10-2 0.5 0.2 ZthJC[K/W] 100 µs 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 20 12 20 V 20 V 10 V 15 10 V 8V 9 8V ID[A] ID[A] 7V 7V 10 6 6V 5.5 V 6V 5 3 5V 5.5 V 4.5 V 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.70 1.50 1.30 10 V 1.10 5.5 V 6V 6.5 V 20 V 7V RDS(on)[Ω] RDS(on)[Ω] ID=f(VDS);Tj=25°C;parameter:VGS 3.0 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 20 VDS[V] 0.90 typ 98% 0.70 0.50 0.30 0 5 10 15 0.10 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=2.1A;VGS=10V 9 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 18 10 16 9 25 °C 8 14 480 V 120 V 7 12 8 VGS[V] ID[A] 6 10 150 °C 4 6 3 4 2 2 0 5 1 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 20 25 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=3.2Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 150 125 101 IF[A] 125 °C EAS[mJ] 100 25 °C 100 75 50 25 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=1.2A;VDD=50V 10 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 760 740 720 103 Ciss 680 C[pF] VBR(DSS)[V] 700 660 102 Coss 640 101 620 Crss 600 580 -60 -20 20 60 100 140 180 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 3 Eoss[µJ] 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 7PackageOutlines Figure1OutlinePG-VSON-4,dimensionsinmm/inches Final Data Sheet 13 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 8AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesignTools:www.infineon.com Final Data Sheet 14 Rev.2.1,2014-03-07 650VCoolMOS™E6PowerTransistor IPL65R660E6 RevisionHistory IPL65R660E6 Revision:2014-03-07,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-08-26 Release of final version 2.1 2014-03-07 Added in Features list: Qualified for industrial grade application WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.1,2014-03-07