SFH619A VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, 300 V BVCEO Features • • • • High Collector-emitter Voltage (VCEO = 300 V) High Isolation Test Voltage, 5300 VRMS Standard Plastic DIP-4 Package Compatible with Toshiba TLP627 A 1 4 C C 2 3 E Agency Approvals • UL - File No. E52744 System Code H or J • BSI IEC60950 IEC60965 i179062 Description Order Information The SFH619A is optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Part Remarks SFH619A CTR > 1000 %, DIP-4 SFH619A-X007 CTR > 1000 %, SMD-4 (option 7) SFH619A-X009 CTR > 1000 %, SMD-4 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Peak reverse voltage Forward continuous current Symbol Value Unit VRM 6.0 V 60 mA 1.33 mW/°C Pdiss 100 mW IF Derate linearly from 25 °C Power dissipation Output Symbol Value Unit Collector-emitter breakdown voltage Parameter BVCEO 300 V Emitter-collector breakdown voltage BVECO 0.3 V IC 125 mA 2.00 mW/°C 150 mW Collector (load) current Test condition Derate linearly from 25 °C Power dissipation Document Number 83674 Rev. 1.3, 20-Apr-04 Pdiss www.vishay.com 1 SFH619A VISHAY Vishay Semiconductors Coupler Parameter Test condition Symbol Derate linearly from 25 °C Value Unit 3.33 mW/°C Ptot 250 mW VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Total power dissipation Isolation test voltage (between emitter and detector, standard climate: 23 °C/50 % RH, DIN 50014) Isolation resistance t=1s VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 11 Ω ≥ 10 Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Tsld 260 °C Soldering temperature max. 10 s, DIP soldering: distance to seating plane ≥ 1.5 mm Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 10 mA Test condition Symbol VF Min 1.2 1.5 Unit V Reverse current VR = 6.0 V IR 0.02 10 µA Capacitance VR = 0 V CO 14 pF Output Symbol Min Collector-emitter breakdown voltage Parameter ICE = 100 µA BVCEO 300 V Emitter-collector breakdown voltage IEC = 100 µA BVECO 0.3 V Collector-emitter dark current VCE = 200 V, TA = 25 °C ICEO VCE = 200 V, TA = 100 °C ICEO VCE = 0 V, f = 1.0 MHz CCE Collector-emitter capacitance Test condition Typ. 10 Max Unit 200 nA 20 nA 39 pF Coupler Parameter Collector-emitter saturation voltage Test condition IF = 1.0 mA, IC = 10 mA Symbol VCEsat Coupling capacitance www.vishay.com 2 VI-O = 0 V, f = 1.0 MHz Min Typ. VCEsat CC 0.3 0.6 Max Unit 1.0 V 1.2 V pF Document Number 83674 Rev. 1.3, 20-Apr-04 SFH619A VISHAY Vishay Semiconductors Current Transfer Ratio Parameter Test condition IF = 1.0 mA, VCE = 1.0 V Current Transfer Ratio Symbol Min CTR 1000 Symbol Min Typ. Max Unit % Switching Characteristics Parameter Rise time Fall time Turn-on time Turn-off time Test condition VCC = 10 V, IC = 10 mA, RL = 100 Ω tr VCC = 10 V, IF = 16 mA, RL = 180 Ω VCC = 10 V, IC = 10 mA, RL = 100 Ω Typ. Max Unit 3.5 µs tr 1.0 µs tf 14.5 µs VCC = 10 V, IF = 16 mA, RL = 180 Ω tf 20.5 µs VCC = 10 V, IC = 10 mA, RL = 100 Ω ton 4.5 µs VCC = 10 V, IF = 16 mA, RL = 180 Ω ton 1.5 µs VCC = 10 V, IC = 10 mA, RL = 100 Ω toff 29.0 µs VCC = 10 V, IF = 16 mA, RL = 180 Ω toff 53.5 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) IF VCC RL VCE tR VO IF Collector Current, IC (mA) 140 TA=100°C 100 TA = 25°C 80 TA = –40°C 60 40 20 tF t ON 0 t OFF 0 isfh619a_01 5 10 15 20 25 30 35 Forward Current, IF (mA) 40 45 50 isfh619a_04 Fig. 1 Switching Waveform and Switching Schematic Fig. 3 Collector Current vs. Forward Current 1000.00 90.00 VCE =1.2 V 100.00 Collector Current, IC (mA) Collector Current, IC (mA) 120 VCE =1.0 V 10.00 1.00 0.10 0.01 0 1 10 Forward Current, IF (mA) 100 isfh619a_03 Fig. 2 Collector Current (mA) vs. Forward Current (mA) Document Number 83674 Rev. 1.3, 20-Apr-04 IF = 10 (mA) 80.00 70.00 60.00 50.00 40.00 30.00 IF = 1 (mA) 20.00 10.00 0.00 –40 –20 0 20 40 60 Temperature, TA (°C) 80 100 isfh619a_05 Fig. 4 Collector Current vs. Ambient Temperature www.vishay.com 3 SFH619A VISHAY Vishay Semiconductors 140 1.2 120 1.0 Normalized CTR Collector Current, IC (mA) IF = 10 mA 100 80 60 40 IF = 1.0 mA 0.8 0.6 0.4 0.2 20 0 0.6 0.7 0.8 0.9 1.0 1.1 Collector-Emitter Voltage, VCE (V) 0 –40 1.2 –20 0 20 40 60 80 100 Temperature, TA (°C) isfh619a_06 isfh619a_09 Fig. 5 Collector Current vs. Collector Emitter Voltage Fig. 8 Normalized CTR vs. Temperature 1000.00 1000.00 ICEO (nA) Time Switching, µs VCE=300 V 100.00 VCE=200 V VCE=50 V 10.00 1.00 tOFF 100.00 10.00 tON 0.10 –40 1.00 –20 0 20 40 60 80 100 0.1 Temperature, TA (°C) isfh619a_07 1 Load Resistor, RL (kΩ) 10 isfh619a_10 Fig. 6 Collector-Emitter Dark Current vs. Collector-Emitter Voltage over Temperature Fig. 9 Switching Time vs. Load Resistor Current Transfer Ratio, CTR 10000 VCE=1.2 V 1000 VCE=1 V 100 0.10 1.00 10.00 Forward Current, IF (mA) 100.00 isfh619a_08 Fig. 7 Current Transfer Ratio vs. Forward Current www.vishay.com 4 Document Number 83674 Rev. 1.3, 20-Apr-04 SFH619A VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) ISO Method A 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 10° 4° typ. .018 (.46) .022 (.56) i178027 .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) Option 7 3°–9° .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) .008 (.20) .012 (.30) Option 9 .375 (9.53) .395 (10.03) .300 (7.62) TYP. .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. Document Number 83674 Rev. 1.3, 20-Apr-04 .0098 (.249) .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18494 www.vishay.com 5 SFH619A VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83674 Rev. 1.3, 20-Apr-04