ILCT6/ MCT6 Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel Features • • • • • Current Transfer Ratio, 50 % Typical Leakage Current, 1.0 nA Typical Two Isolated Channels Per Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 8 E C 2 7 C C 3 6 C A 4 5 E Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection e3 i179016 Pb Pb-free can also be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 • CSA 93751 • BSI IEC60950 IEC60065 Order Information Part Description The ILCT6/ MCT6 is a two channel optocoupler for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILCT6/ MCT6 is especially designed for driving medium-speed logic, where it may be used to eliminate troublesome ground loop and noise problems. It Remarks ILCT6 CTR ≥ 20 %, DIP-8 MCT6 CTR ≥ 20 %, DIP-8 ILCT6-X007 CTR ≥ 20 %, SMD-8 (option 7) ILCT6-X009 CTR ≥ 20 %, SMD-8 (option 9) MCT6-X007 CTR ≥ 20 %, SMD-8 (option 7) MCT6-X009 CTR ≥ 20 %, SMD-8 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Symbol Value Unit 60 mA IFM 3.0 A Pdiss 100 mW 1.3 mW/°C Rated forward current, DC Peak forward current, DC Power dissipation Derate linearly from 25 °C Document Number 83645 Rev. 1.4, 26-Oct-04 1.0 µs pulse, 300 pps www.vishay.com 1 ILCT6/ MCT6 Vishay Semiconductors Output Parameter Test condition Symbol Value Unit IC 30 mA BVCEO 30 V Pdiss 150 mW 2 mW/°C Collector current Collector-emitter breakdown voltage Power dissipation Derate linearly from 25 °C Coupler Parameter Test condition Symbol Value Unit VISO 5300 VRMS VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ Ω Isolation test voltage Isolation resistance 1011 Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Total package dissipation Ptot Derate linearly from 25 °C 400 mW 5.33 mW/°C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C 10 sec. Lead soldering time at 260 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 20 mA Test condition Symbol VF Min 1.25 1.50 Unit V Reverse current VR = 3.0 V IR 0.1 10 µA Junction capacitance VF = 0 V Cj 25 pF Output Symbol Min Typ. Collector-emitter breakdown voltage Parameter IC = 10 µA, IE = 10 µA BVCEO 30 65 V Emitter-collector breakdown voltage IC = 10 µA, IE = 10 µA BVECO 7.0 10 V Collector-emitter leakage current VCE = 10 V ICEO 1.0 Collector-emitter capacitance VCE = 0 V CCE 8.0 www.vishay.com 2 Test condition Max 100 Unit nA pf Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors Coupler Parameter Test condition Saturation voltage, collectoremitter IC = 2.0 mA, IF = 16 mA Symbol Min Typ. VCEsat Max Unit 0.40 V Capacitance (input-output) f = 1.0 MHz 0.5 pF Capacitance between channels f = 1.0 MHz 0.4 pF Bandwidth IC = 2.0 mA, VCC = 10 V, RL = 100 Ω 150 kHz CIO Current Transfer Ratio Parameter DC Current Transfer Ratio Test condition Symbol Min Typ. IF = 10 mA, VCE = 10 V CTRDC 20 50 Symbol Min Typ. Max Unit % Switching Characteristics Parameter Test condition IC = 2.0 mA, RE = 100 Ω, VCE = 10 V Switching times, output transistor ton, toff Max Unit µs 3.0 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.5 1. 3 Ta = –55°C NCTR - Normalized CTR VF - Forward Voltage - V 1.4 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 85°C 0.8 Normalized to: VCE = 10 V, IF = 10 mA TA= 25°C CTRce(sat) VCE = 0.4 V 1.0 0.5 NCTR(SAT) NCTR 0.0 0.7 .1 1 10 IF - Forward Current - mA .1 100 iilct6_01 1 10 100 I F - LED Current - mA iilct6_02 Figure 1. Forward Voltage vs. Forward Current Document Number 83645 Rev. 1.4, 26-Oct-04 Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 3 ILCT6/ MCT6 Vishay Semiconductors 35 Normalized to: VCE = 10 V, IF = 10 mA, TA= 25°C ˇ CTRce(sat) VCE = 0.4 V 1.0 ICE - Collector Current - mA TA= 50°C 0.5 NCTR(SAT) NCTR 30 25 50°C 20 15 85°C 10 5 0 0.0 .1 1 10 100 0 10 I F - LED Current - mA iilct6_03 40 30 50 60 Figure 6. Collector-Emitter Current vs. Temperature and LED Current 1.5 10 5 ICEO - Collector-Emitter - nA NCTR - Normalized CTR 20 IF - LED Current - mA iilct6_06 Figure 3. Normalized Non-Saturated and Saturated CTR vs. LED Current Normalized to: VCE = 10 V, IF = 10 mA TA= 25°C 1.0 CTRce(sat) VCE = 0.4 V TA= 70°C 0.5 NCTR(SAT) NCTR 10 4 10 3 10 2 .1 1 10 Vce = 10 V 10 1 Typical 10 0 10 -1 10 -2 -20 0.0 100 0 20 40 60 80 100 TA - Ambient Temperature - °C I F - LED Current - mA iilct6_04 iilct6_07 Figure 4. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 7. Collector-Emitter Leakage Current vs.Temp. Normalized to: V CE = 10 V, I F = 10 mA, TA = 25°C CTRce(sat) VCE = 0.4 V 1.0 TA = 85°C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - mA tpLH - Propagation Delay µs 1000 1.5 NCTR - Normalized CTR 70°C 25°C 2.5 Ta = 25°C, IF = 10 mA Vcc = 5 V, Vth = 1.5 V tpHL 100 2.0 10 1.5 tpLH 1 100 tpHL - Propagation Delay µs NCTR - Normalized CTR 1.5 1.0 .1 1 10 100 RL - Collector Load Resistor - kΩ iilct6_05 Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 4 iilct6_08 Figure 8. Propagation Delay vs. Collector Load Resistor Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors IF VCC = 5 V IF = 10 mA t PHL VO VO tPLH F = 10 KHz, DF = 50% tS RL = 75 Ω 50% iilct6_10 iilct6_09 tD tF tR Figure 9. Switching Timing Figure 10. Switching Schematic Package Dimensions in Inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) ISO Method A .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .031 (0.79) .300 (7.62) typ. .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 Document Number 83645 Rev. 1.4, 26-Oct-04 10° .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3°–9° .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) www.vishay.com 5 ILCT6/ MCT6 Vishay Semiconductors Option 7 Option 9 .375 (9.53) .395 (10.03) .300 (7.62) TYP. .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. www.vishay.com 6 .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18494 Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83645 Rev. 1.4, 26-Oct-04 www.vishay.com 7