AH8502

AH8502
MICROPOWER
LINEAR HALL EFFECT SENSOR
Description
Pin Assignments
NEW PRODUCT
The AH8502 is a micropower linear Hall effect sensor with an 8-bit
output resolution. The output voltage is ratiometric to the supply
voltage and proportional to the magnetic flux density, perpendicular to
the part marking surface. The output null voltage is at half the supply
voltage.
(Top View)
The AH8502 has a typical sensitivity of 2.1mV/G and 3.55mV/G at
1.8V and 3V. The typical null voltage offset is less than 1% of V DD.
The device has typical input referred rms noise of 0.36G and 0.24G at
1.8V and 3.0V.
Designed for battery powered consumer equipment to office
equipment, home appliances and industrial applications, the AH8502
can operate over the supply range of 1.6V to 3.6V. The device has a
CNTRL pin to select the operating modes and sampling rate to
minimize power consumption. The device operates in default
micropower mode with a sampling rate of 24Hz typical and consumes
only 13µA typical at 1.8V. In turbo mode with continuous 6.25kHz
sample rate the current consumption is 1mA typical. In external-drive
mode, the CNTRL can be used to change the sampling frequency up
to 7.14KHz with current consumption of 1.16mA typical at 1.8V.
To minimize PCB space, the AH8502 is available in small low profile
U-DFN2020-6.
Features













OUTPUT
1
6
NC
NC
2
5
GND
VDD
3
4
CNTRL
Exposed
Pad
U-DFN2020-6
Applications







High Accuracy Level, Proximity, Position and Travel Detection
Button Press Detection in Digital Still, Video Cameras and
Handheld Gaming Consoles
Accurate Door, Lids and Tray Position Detection
Liquid Level Detection
Joy Stick Control – Gaming and Industrial Applications
Smart Meters
Contact-Less Level, Proximity and Position Measurement in
Home Appliances and Industrial Applications
Linear Hall Effect Sensor with +/-430G Sense Range and Output
Voltage with 8-bit Resolution
Supply Voltage of 1.6V to 3.6V
Sensitivity: 2.1mV/G and 3.55mV/G at 1.8V and 3V at +25°C
Low Offset Voltage
Micropower (Default Mode), Turbo and External-Drive Modes
Ultra Low Average Supply Current

13µA Typical in Micropower Mode (Default) Period at 1.8V

1.01mA Typical in Turbo Mode at 1.8V

1.16mA Typical in External Drive Mode with 7.14kHz
Sampling Rate at 1.8V
Chopper Stabilized Design with Superior Temperature Stability,
Minimal Sensitivity Drift, Enhanced Immunity to Physical Stress
Output Voltage Maintained at „Sleep‟ Mode
-40°C to +85°C Operating Temperature
High ESD Capability of 6kV Human Body Model
Small Low Profile U-DFN2020-6 Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
AH8502
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AH8502
Typical Applications Circuit
VDD
CNTRL
NEW PRODUCT
CIN
AH8502
OUTPUT
GND
Note:
4. CIN is for power stabilization and to strengthen the noise immunity, the recommended capacitance is 100nF typical and should be placed as close to the
supply pin as possible.
Pin Descriptions
Pin Number
Pin Name
1
OUTPUT
Function
2
NC
No Connection (Note 5)
3
VDD
Power Supply Input
Output Pin
Device Control Pin:
The CNTRL pin allows to select the modes of operation (Micropower Mode, Turbo Mode and
External-Drive Mode) and to adjust the sampling rate in External Drive Mode to minimize the power
consumption.
When CNTRL = GND or floating, the device operates in default Micropower Mode with 24Hz
sampling rate and consumes 13µA typical at 1.8V. The CNTRL pin is internally pulled low.
4
CNTRL
When CNTRL = VDD, the device is on and operates in Turbo Mode with continuous sampling rate of
6.25kHz typical consuming 1.01mA typical at 1.8V.
In External Drive Mode, an external PWM signal can be used to drive the CNTRL pin to adjust the
sampling frequency from 24Hz typical up to 7.14kHz typical. If external PWM pulse is used, the
minimum pulse width needed on the CNTRL pin to start a sample/conversion is 20µs typical. We
recommend using a pulse width of 40µs minimum. The minimum sample and conversion cycle
is140µs typical.
Note:
5
GND
6
NC
No Connection (Note 5)
Pad
Pad
The center exposed pad – No connection internally.
The exposed pad can be left open (unconnected) or tied to the GND on the PCB layout.
Ground Pin
5. NC is “No Connection” pin and is not connected internally. This pin can be left open or tied to ground.
AH8502
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AH8502
Functional Block Diagram
VDD
GND
8
NEW PRODUCT
CNTRL
Oscillator, Awake/Sleep Timing Control, Operating Modes,
Reference Current Generation and Power Switch
Amp
ADC
Output
Register
8
Output
DAC
OUTPUT
(Analog)
(8-Bit Resolution)
Hall Plate
Chopper
Control
AH8502
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AH8502
Absolute Maximum Ratings (Note 6) (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
VDD and VOUT
Supply Voltage and Output Voltage (Note 7)
VDD_REV and
Reverse Supply and Output Voltage
VOUT_REV
NEW PRODUCT
IOUT
Output Current (Limited by 10kΩ Output Resistor)
B
Magnetic Flux Density Withstand
PD
Package Power Dissipation
TS
Storage Temperature Range
TJ
Maximum Junction Temperature
ESD HBM
Notes:
Rating
Unit
4
V
-0.3
V
VDD/10
mA
Unlimited
U-DFN2020-6
230
mW
-65 to +150
°C
+150
°C
6
kV
Human Body Model (HMB) ESD Capability
6. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
7. The absolute maximum VDD of 4V is a transient stress rating and is not meant as a functional operating condition. It is not recommended to operate the
device at the absolute maximum rated conditions for any period of time.
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
VDD
TA
Rating
Unit
Supply Voltage
Operating
1.6 to 3.6
V
Operating Temperature Range
Operating
-40 to +85
°C
Electrical Characteristics
Symbol
Conditions
(Notes 8 & 9) (@TA = +25°C, VDD = 1.8V, unless otherwise specified.)
Parameter
Conditions
Min
Typ
Max
Unit
-
13
20
µA
-
17
25
µA
-
1.01
1.3
mA
-
1.44
1.8
mA
VOUTPUT = VDD/2, CNTRL clocking at 7.14kHz,
VDD = 1.8V (Note 10)
-
1.16
1.5
mA
VOUTPUT = VDD/2, CNTRL clocking at 7.14kHz,
VDD = 3V (Note 10)
-
1.65
2.1
mA
Supply Current
IDD_UP_MODE
IDD_TURBO_MODE
Average Supply Current in
Micropower Mode with Continuous
Sampling Rate of 24Hz
VOUTPUT = VDD/2, CNTRL = GND, VDD = 1.8V
(CNTRL = GND Continuously)
(Note 10)
VOUTPUT = VDD/2, CNTRL = GND, VDD = 3.0V
VOUTPUT = VDD/2, CNTRL = VDD, VDD = 1.8V
Average Supply Current in Turbo
Mode with Continuous Sampling Rate (Note 10)
of 6.25Hz
VOUTPUT = VDD/2, CNTRL = GND, VDD = 3.0V
(CNTRL = VDD Continuously)
(Note 10)
Average Supply Current at 7.14kHz
IDD_7kHz_EXTDRV Sampling Rate When CNTRL is
Externally Driven
Notes:
(Note 10)
8. When power is initially turned on, the operating VDD (1.6V to 3.6V) must be applied to guarantee the output sampling.
After the supply voltage reaches minimum operating voltage, the output state is valid after tON_INITIAL..
9. Typical data is at TA = +25C, VDD = 1.8V unless otherwise stated.
10. The parameters are not tested in production, they are guaranteed by design, characterization and process control.
AH8502
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AH8502
Electrical Characteristics
(Cont.) (@TA = +25°C, VDD = 1.8V, unless otherwise specified.)
CNTRL pin timing, conversion rate and IDD supply current relationship
AH8502 CNTRL Pin Driven Externally – External Drive Mode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
ten
NEW PRODUCT
EN
TCONV
Tclk
OUT
DATA0
DATA1
Status
AWAKE(ON)
SLEEP
AWAKE(ON)
SLEEP
ICC
1.35 mA
8.9µA
1.35 mA
8.9µA
Status: AWAKE: chip processing phase (12*Tclk) ,
SLEEP: chip retain data
Tclk: internal clock period, typical = 10µs
ten : pulse width of enable signal, minimum=2*Tclk= 20µs (typical)
TCONV: One sample/conversion cycle = 14*Tclk= 140µs (typical)
IDD ( @ VDD = 1.8V, 25oC):
(1) If CNTRL pin clocked at maximum (~7.14 kHz): IDD = 1.35mA*12/14+8.93µA*2/14 ≈ 1.16mA
(2) If CNTRL pin clocked at 24Hz: IDD ≈ 13µA
(3) If CNTRL clocking period =T, IDD = 1.35mA*120µs/T + 8.93µA*(T-120µs)/T
AH8502 CNTRL = GND or Logic Low (0) Continuously – Micropower Mode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15 4095 4096 4097 4098 4099 4100 4101 4102 4103 4104 4105 4106 4107 4108 4109 4110
TS=4096*Tclk
EN
DATA0
OUT
Status
AWAKE(ON)
SLEEP
ICC
1.35 mA
8.9µA
DATA1
AWAKE(ON)
SLEEP
1.35 mA
8.9µA
Tclk: internal clock period, typical= 10µs
TS: awake cycle time = 4096*Tclk ≈ 41ms
AH8502 CNTRL = VDD or Logic High Continuously – Turbo Mode
0
1
2
3
4
5
6
7
EN
OUT
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
TCONV
Tclk
DATA0
Status
AWAKE(ON)
SLEEP
ICC
1.35 mA
8.9µA
DATA1
AWAKE(ON)
1.35 mA
SLEEP
8.9µA
Tclk: internal clock period, typical= 10µs
TCONV: One sample/conversion period when ENABLE = Hugh (VDD )= 16*Tclk=160µs
IDD ( @ VDD = 1.8V, 25oC):
IDD = 1.35mA*120µs/160µs + 8.93µA*40µs/160µs ≈ 1.01mA (typical)
AH8502
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AH8502
Electrical Characteristics (Cont.) (Notes 11, 12 & 13) (@TA = +25°C, VDD = 1.8V, unless otherwise specified.)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
1
-
ms
-
0.2
-
ms
-
20
-
µs
100
140
200
µs
-
7.14
-
kHz
-
6.25
-
kHz
-
24
-
Hz
-
0.16
-
ms
-
41.6
-
ms
VDD = 1.8V (Note 13)
0.4
0.5
0.6
V
VDD = 3.0V (Note 13)
0.8
0.9
1
V
VDD = 1.8V (Note 13)
1.2
1.3
1.4
V
VDD = 3V
2.2
2.3
2.4
V
-
10
13
kΩ
CIN = Open, VDD = 1.8V, TA = +25°C,
-
0.36
-
G
CIN = Open, VDD = 3.0V, TA = +25°C,
--
0.24
-
G
VDD = 1.8V, TA = +25°C, CIN=0.1uF,
VDD rise time =10µs,
tON_INITIAL
Initial Power On Time
(Note 14)
VDD = 3V, TA = +25°C, CIN=0.1uF,
VDD rise time =10µs,
NEW PRODUCT
(Note 14)
Minimum Pulse Width on CNTRL Pin
to Start One Conversion Cycle When
Driving CNTRL Pin Externally
ten
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
(Note 14)
(See Application Note Section)
TCONV
fMAX
Minimum Period of One
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
Sample/Conversion Cycle
(Note 14)
Maximum Sampling Frequency
f_TURBO_MODE
f_UP_MODE
(Note 14)
Sampling Frequency in Turbo Mode
with CNTRL = VDD or Logic High
CNTRL = High (VDD),
Continuously
(Note 14)
Sampling Frequency in Micropower
CNTRL = High (VDD),
Mode with CNTRL = GND or Logic
Low Continuously
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
Awake or Sampling Period in Turbo
T_TURBO_MODE Mode with CNTRL = VDD or Logic
T_UP_MODE
VDD = 1.6V to 3.6V, TA = -40°C to +85°C,
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
(Note 14)
CNTRL = High (VDD),
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
High Continuously
(Note 14)
Awake or Sampling Period in
Micropower Mode with CNTRL =
GND or Logic Low Continuously.
CNTRL = High (VDD),
VCNTRL_LOW
CNTRL Pin Input Low Voltage
VCNTRL_HIGH
CNTRL Pin Input High Voltage
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
(Note 14)
(Note 13)
Output Characteristics
CNTRL = VDD or GND,
ROUT
DC Output Resistance
VDD = 1.6V to 3.6V, TA = -40°C to +85°C,
(Note 14)
Noise_RMS
ADCRES
Input Referred Noise, RMS (Note 14)
Internal ADC and DAC Resolution
(Note 14)
-
8
-
Bit
Output Voltage Resolution
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
-
VDD/256
-
mV
VOUTH
Max. Output Voltage
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
-
VDD*255/256
-
V
VOUTL
Min. Output Voltage
VDD = 1.6V to 3.6V, TA = -40°C to +85°C
-
0
-
V
DACRES
VOUT_RES
Notes:
11. When power is initially turned on, the operating VDD (1.6V to 3.6V) must be applied to guarantee the output sampling.
The output state is valid after tON_INITIAL from the supply voltage reaching the minimum operating voltage.
12. Typical data is at TA = +25°C, VDD = 1.8V unless otherwise stated.
13. Maximum and minimum parameters values over operating temperature range are not tested in production, they are guaranteed by design,
characterization and process control.
14. The parameter is not tested in production, they are guaranteed by design, characterization and process control.
AH8502
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AH8502
Electrical Characteristics
Symbol
(Cont.) (Note 11, 12 & 13) (@TA = +25°C, VDD = 1.8V, unless otherwise specified.)
Parameter
Conditions
Min
Typ
Max
Unit
Magnetic Characteristics
BRANGE
NEW PRODUCT
GRES
Measurable Magnetic Flux Density
VDD = 1.8V, TA =+25°C
370
430
505
G
Range
VDD = 3V, TA =+25°C
367
423
497
G
VDD = 1.8V, TA =+25°C
2.91
3.35
3.94
G/LSB
VDD = 3V, TA =+25°C
2.87
3.30
3.88
G/LSB
B = 0.5G, TA = +25°C
-
VDD / 2
-
V
VDD = 1.8V, TA = +25°C
0.882
0.9
0.918
V
VDD = 3V, TA = +25°C
1.47
1.5
1.53
V
B = 0.5G, VDD = 1.8V, TA = +25°C
-1%
-
1%
% of VDD
B = 0.5G, VDD = 3V, TA = +25°C
-1%
-
1%
% of VDD
-1.5
-
1.5
% of VDD
VDD = 1.8V, TA = +25°C
1.79
2.1
2.42
VDD = 3V, TA = +25°C
3.02
3.55
4.08
VDD = 1.8V, TA = +25°C
-15
-
15
%
VDD = 3V, TA = +25°C
-15
-
15
%
-18
-
18
%
-3
-
3
%
VDD = 1.8V, TA = +25°C (Note 14)
-
99.9
-
%
VDD = 3.0V, TA = +25°C (Note 14)
-
99.7
-
%
VDD = 1.8V, TA = +25°C (Note 14)
-
100.1
-
%
VDD = 3.0V, TA = +25°C (Note 14)
-
100.4
-
%
Gauss Resolution
Quiescent Output Voltage with Zero
Gauss
VNULL
VOFFSET
Quiescent Output Voltage Offset
B = 0.5G, VDD = 1.6V to 3.6V,
TA = -40°C to +85°C
(Note 14)
VSENS
Output Voltage Sensitivity
VSENS_ACC
Sensitivity Accuracy
mV/G
VDD = fixed at any one voltage between
1.6V to 3.6V,
TA = -40°C to +85°C
(Note 14, Note 15)
TC_ERRSENS
Lin+
Positive Linearity (Span Linearity)
LinNotes:
Sensitivity Error over Full Temperature VDD=fixed, TA = -40°C to +85°C (Note 14)
Negative Linearity (Span Linearity)
11. When power is initially turned on, the operating VDD (1.6V to 3.6V) must be applied to guarantee the output sampling.
The output state is valid after tON_INITIAL from the supply voltage reaching the minimum operating voltage.
12. Typical data is at TA = +25C, VDD = 1.8V unless otherwise stated.
13. Maximum and minimum parameters values over operating temperature range are not tested in production, they are guaranteed by design,
characterization and process control.
14. The parameter is not tested in production, they are guaranteed by design, characterization and process control.
15. This term constitutes of output voltage sensitivity temperature coefficient error and sensitivity accuracy.
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AH8502
Application Note
CNTRL Pin - Awake and Sleep Period and Operating Mode Control
The CNTRL pin controls the device operating mode (Micropower, Turbo, External Drive modes) and “Awake” and “Sleep” periods during external
drive mode.
When CNTRL is pulled high CNTRL = VDD (or pulled high) continuously, the device runs in turbo Mode with sampling rate of 6.25kHz and
consumes 1.01mA typical at 1.8V. When the CNTRL pin is pulled high continuously, the conversion time TCONV is 16 clock cycles (160µs typical)
and therefore the sampling rate is 6.25kHz.
If the CNTRL pin is driven externally with a PWM signal, the sampling rate can be adjusted from 24Hz to 7.14kHz. A minimum pulse width on
CNTRL pin to start a sample/conversion is 20µs typical; we recommend using pulse width of 40µs minimum.
In external drive mode with a PWM signal on the CNTRL pin, the conversion time (signal acquisition, conversion and output update) TCONV is 14
clock cycles (140µs typical). When the CNTRL goes high, the sample trigger delay is 1 clock pulse (10µs) where supply current remains at
8.93µA typical at VDD = 1.8V. After the sample trigger delay, the next 12 clock pulse (120µs typical) is „Awake‟ period where the typical supply
current is 1.35mA at 1.8V supply. The next pulse (10µs) is used to update the output stage and during this time the supply current drops back to
8.93µA typical at 1.8V supply. Therefore, the average supply current of the device depends on the sampling frequency and at the maximum
sampling rate of 7.14kHz, it is 1.16mA typical at 1.8V.
The maximum sampling frequency is 7.14kHz when the CNTRL pin is externally driven with a PWM signal.
For CNTRL pin clocking period of T, the average current is given by
(@1.8V)
(General equation)
Quiescent Output Voltage VNULL and Offset Voltage
The figure below shows the ideal transfer curve near zero magnetic field (B = 0Gauss). Zero Gauss is the transition point between
VOUTPUT = VDD*127/128 and VOUTPUT = VDD/2. When B is slightly larger than zero, the output is one-half the supply voltage typically.
Quiescent output voltage (VNULL) is defined as the typical output voltage when B = 0.5Gauss (slightly higher than 0G). Any difference of VNULL
from VDD/2 introduces offset (VOFSET).
Volts
Output Voltage (VOUTPUT)
NEW PRODUCT
When the CNTRL pin is pulled low or GND continuously, the device operates in micropower mode with sampling rate of 24Hz and consumes
only 13µA typical at 1.8V. The CNTRL pin is internally pulled low and therefore the default mode is micropower mode if the CNTRL pin is left
floating.
129
256
VDD
VDD/2
127
256
126
256
VDD
VDD
Gauss
-GRES
0
+GRES
Magnetic Flux Density (B)
Transfer Curve Near 0 Gauss
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Application Note (Cont.)
Sensitivity and Transfer Characteristic
The device responds to the magnetic flux density perpendicular to the part marking surface. For South pole magnetic flux density increase from
0G, the output voltage will increase from VNULL and for a North magnetic pole field, the output will decrease from VNULL. The changes in the
voltage level up or down are symmetrical to VNULL and are proportional to the magnetic flux density.
The AH8502 has a measurable magnetic field range of +/-430G and output voltage range of 0V to (255/256)VDD. Therefore sensitivity at 1.8V is
given by
The device has an internal ADC and DAC with resolution of 8-bits. Therefore the measurement resolution is 3.36G/LSB at VDD = 1.8V. In terms
of voltage, the output resolution at 1.8V is 7mV/LSB typical. The device follows the 8-bit step for transfer curve superimposed on the V SENS
above. This difference in theoretical linear value with 8-bit resolution steps produces measurement (quantization) error at each step.
Quantization error (also measurement error) = 0.5*step = VDD/512(output voltage)
Or = Full magnetic range/512 (input magnetic field)
3.9
3.6
Output Voltage VOUTPUT (V)
NEW PRODUCT
The output voltage change is proportional to the magnitude and polarity of the magnetic field perpendicular to the part marking surface. This
proportionality is defined as output voltage sensitivity and is given by
TA = +25 C
3.6V
3.3V
3.0V
3.3
3.0
2.7
2.4
2.1
1.8V
1.6V
1.8
1.5
1.2
0.9
0.6
0.3
0.0
-500
-400
-300
-200
-100
0
100
200
300
400
500
Magnetic Flux Density, B (Gauss)
Transfer Curve – Output Voltage vs. Magnetic Flux Density
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Application Note (Cont.)
Span Linearity
Coordinate of transition points (V0~V255 and B0~B254) can be extracted from a transfer curve. Span linearity is defined and based on these
coordinate points.
NEW PRODUCT
Span linearity is defined as linearity arising from sensitivity differences between the maximum flux density range and half of the range for positive
and negative flux density. Referring to the diagram below, north field span linearity LIN- and south field span linearity LIN+ are given by:
Output
V255
V254
V253
V252
V251
V250
V249
…
V6
…
V5
V4
V3
V2
V1
V0
B0
AH8502
Document number: DS37683 Rev. 1 - 2
B1
B2
B3
B4
B5 …… B249
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B250
B251
B252
B253
B254
Magnetic
Field
February 2015
© Diodes Incorporated
AH8502
Typical Operating Characteristics
Average Supply Current
Average Supply Current IDD (µA)
Micropower Mode, CNTRL = GND, TA = +25 C,
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
Average Supply Current IDD (mA)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Micropower Mode, CNTRL = GND
3.6V
3.3V
3.0V
2.5V
1.8V
1.6V
-50
-40
-30
-20
-10
20
30
40
50
60
70
80
Average Supply Current (CNTRL= GND) vs Supply Voltage
Average Supply Current (CNTRL = GND) vs Temperature
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Turbo Mode, CNTRL = VDD
3.6V
3.3V
3.0V
2.5V
1.8V
1.6V
-50
-40
-30
-20
-10
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40
50
60
70
80
90
Externally Driven, CNTRL = 20µs pulse 7.14kHz PWM
1.8V
1.6V
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Temperature (oC)
Average Supply Current (CNTRL = PWM) vs Supply Voltage
Document number: DS37683 Rev. 1 - 2
30
3.6V
3.3V
3.0V
2.5V
Supply Voltage (V)
AH8502
20
External Drive Mode with 7.14kHz Sampling Rate
Average Supply Current IDD (mA)
2
10
Average Supply Current (CNTRL = VDD) vs Temperature
Externally Driven, CNTRL = 20µs pulse 7.14kHz PWM, TA = +25 C
1.8
0
Temperature (oC)
External Drive Mode with 7.14kHz Sampling Rate
1.6
90
Turbo Mode – 6.25kHz Sample Rate
Average Supply Current (CNTRL = VDD) vs Supply Voltage
1.4
10
Temperature (oC)
Supply Voltage (V)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Supply Voltage (V)
Turbo Mode, CNTRL = VDD , TA = +25 C
1.4
24.0
22.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
3.8
Average Supply Current IDD (mA)
Average Supply Current IDD_uP (µA)
24.0
22.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
Micropower Mode (Default)
Turbo Mode – 6.25kHz Sample Rate
Average Supply Current IDD (mA)
NEW PRODUCT
Micropower Mode (Default) – 24Hz Sample Rate
Average Supply Current (CNTRL = PWM) vs Temperature
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AH8502
Typical Operating Characteristics (Cont.)
CIN = 0.1µF, VDD rise time 10µs, TA = +25 C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Initial Power On Time tON_INITIAL (ms)
Initial Power On Time tON_INITIAL (ms)
5.0
18.0
CIN = 0.1µF, VDD rise time 10µs
16.0
1.6V
14.0
12.0
10.0
8.0
6.0
1.8V
4.0
2.0
2.5V 3.0V 3.3
V
0.0
-50
-40
-30
3.6
V
-20
-10
0
10
20
30
40
50
60
70
80
90
Temperature (oC)
Supply Voltage (V)
Initial Power On Time vs Temperature
Initial Power On Time vs Supply Voltage
Typical Sensitivity
5.0
5.0
Sensitivity (mV/Gauss)
Sensitivity (mV/Gauss)
5.5
TA = +25 C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.5
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.3V
3.5
3.0V
3.0
2.5V
2.5
2.0
1.8V
1.6V
1.5
1.0
3.8
-50
-40
-30
-20
-10
0
10
20
30
40
Supply Voltage (V)
Temperature (oC)
Sensitivity vs Supply Voltage
Sensitivity vs Temperature
2.20
50
60
70
80
90
50
60
70
80
90
3.80
VDD = 3.0V
VDD = 1.8V
Sensitivity (mV/Gauss)
2.15
2.10
3.6V
4.0
0.5
1.4
Sensitivity (mV/Gauss)
NEW PRODUCT
Typical Initial Power On Time
1.8V
2.05
2.00
1.95
1.90
3.70
3.60
3.0V
3.50
3.40
3.30
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
-50
-40
-30
-20
-10
0
10
20
30
40
Temperature (oC)
Temperature (oC)
Sensitivity vs Temperature
Sensitivity vs Temperature
AH8502
Document number: DS37683 Rev. 1 - 2
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AH8502
Typical Operating Characteristics (Cont.)
1.8
= +25 C
3.6V
3.3V
3.0V
1.8V
1.6V
-400
-300
-200
-100
0
100
200
300
400
Output Voltage VOUTPUT (V)
Output Voltage VOUTPUT (V)
3.9
3.6 TA
3.3
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
-500
1.6
VDD = 1.6V, TA = -40 C to +85 C
1.4
-40C
1.2
1.0
0C
0.8
25C
0.6
85C
0.4
0.2
0
500
Magnetic Flux Density, B (Gauss)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magnetic Flux Density
3.5
VDD = 1.8V, TA = -40 C to +85 C
1.6
1.4
-40C
1.2
0C
1.0
0.8
25C
0.6
85C
0.4
0.2
0
-500
3.5
-400
-300
-200
-100
0
100
200
300
400
2.5
-40C
2.0
0C
1.5
25C
1.0
85C
0.5
-400
-300
-200
-100
0
100
200
300
Magnetic Flux Density, B (Gauss)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magntic Flux Density
Output Voltage vs Magntic Flux Density
4.0
3.0
2.5
-40C
2.0
0C
1.5
25C
1.0
85C
0.5
-400
VDD = 3.0V, TA = -40 C to +85 C
3.0
0
-500
500
VDD = 3.3V, TA = -40 C to +85 C
0
-500
Output Voltage VOUTPUT (V)
1.8
Output Voltage vs Magntic Flux Density
-300
-200
-100
0
100
200
300
400
500
Output Voltage VOUTPUT (V)
Output Voltage VOUTPUT (V)
2.0
Output Voltage VOUTPUT (V)
NEW PRODUCT
Typical Transfer Curves
3.5
3.0
-40C
2.5
0C
2.0
25C
1.5
85C
1.0
0.5
0
-500
-400
-300
-200
-100
0
100
200
300
Magnetic Flux Density, B (Gauss)
Magnetic Flux Density, B (Gauss)
Output Voltage vs Magntic Flux Density
Document number: DS37683 Rev. 1 - 2
500
VDD = 3.6V, TA = -40 C to +85 C
Output Voltage vs Magntic Flux Density
AH8502
400
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400
500
February 2015
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AH8502
Typical Operating Characteristics (Cont.)
Typical Null Voltage: Output Voltage at B = 0+ Gauss (Note 16)
2.0
2.1
B = 0+ Gauss, TA = +25 C
Null Voltage (V)
Null Voltage (V)
1.6
1.4
1.2
1.0
0.8
3.6V
1.7
3.3V
1.5
3.0V
1.3
2.5V
1.1
1.8V
0.9
1.6V
0.7
0.6
0.5
0.3
0.4
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
-50
3.8
-40
-30
-20
-10
10
20
30
40
50
60
70
80
90
50
60
70
80
90
Null Voltage vs Temperature
Null Voltage vs Supply Voltage
0.920
0
Temperature (oC)
Supply Voltage (V)
1.54
B = 0+ Gauss, VDD = 1.8V
B = 0+ Gauss, VDD = 3.0V
1.53
0.915
Null Voltage (V)
1.52
Null Voltage (V)
NEW PRODUCT
B = 0+ Gauss
1.9
1.8
0.910
0.905
1.8V
0.900
1.51
1.50
3.0V
1.49
1.48
1.47
0.895
1.46
0.890
1.45
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
-50
Temperature (oC)
-30
-20
-10
0
10
20
30
40
Temperature (oC)
Null Voltage vs Temperature
Note:
-40
Null Voltage vs Temperature
16. Null voltage is the voltage with magnetic flux density B = 0G at the sensor. B = 0G is also the transistion point at VDD*127/128 for internal ADC and DAC.
To avoid the transition point fluctuation during measurement of null voltage, B = 0+ Gauss (e.g. 0.5G which is smaller than 1LSB gauss step of 3.125G)
is used. See definition of the null voltage in Application Note section.
AH8502
Document number: DS37683 Rev. 1 - 2
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AH8502
Typical Operating Characteristics (Cont.)
Typical Null Voltage Offset: (Output Voltage - VDD/2) at B = 0 Gauss (Note 16)
B = 0+ Gauss, TA = +25 C
Null Voltage Offset (mV)
Null Voltage Offset (mV)
8.0
6.0
4.0
2.0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
-12.0
-14.0
B = 0+ Gauss
1.6V
1.8V
2.5V
3.0V
3.3V
3.6V
-50
3.8
-40
-30
-20
-10
Null Voltage Offset (mV)
B = 0+ Gauss, VDD = 1.8V
1.8V
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
-12.0
-14.0
20
30
40
50
60
70
80
90
60
70
80
90
B = 0+ Gauss, VDD = 3.0V
3.0V
-50
o
Temperature ( C)
-40
-30
-20
-10
0
10
20
30
40
50
o
Temperature ( C)
Null Voltage Offset vs Temperature
Note:
10
Null Voltage Offset vs Temperature
Null Voltage Offset vs Supply Voltage
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
0
Temperature (oC)
Supply Voltage (V)
Null Voltagte Offset (mV)
NEW PRODUCT
10.0
Null Voltage Offset vs Temperature
16. Null voltage is the voltage with magnetic flux density B = 0G at the sensor. B = 0G is also the transistion point at VDD*127/128 for internal ADC and DAC.
To avoid the transition point fluctuation during measurement of null voltage, B = 0+ Gauss (e.g. 0.5G which is smaller than 1LSB gauss step of 3.125G)
is used. See definition of the null voltage in Application Note section.
AH8502
Document number: DS37683 Rev. 1 - 2
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AH8502
Ordering Information
AH8502 - XXX - X
Packing
Package
NEW PRODUCT
FDC : U-DFN2020-6
Part Number
Package
Code
Packaging
AH8502-FDC-7
FDC
U-DFN2020-6
7 : Tape & Reel
Quantity
7” Tape and Reel
Part Number Suffix
3,000/Tape & Reel
-7
Marking Information
(1)
Package Type: U-DFN2020-6
( Top View )
XX
YWX
AH8502
Document number: DS37683 Rev. 1 - 2
XX : Identification Code
Y : Year : 0~9
W : Week : A~Z : 1~26 week;
a~z : 27~52 week; z represents
52 and 53 week
X : Internal Code
Part Number
Package
Identification Code
AH8502-FDC-7
U-DFN2020-6
KX
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Package Outline Dimensions (All dimensions in mm.)
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
(1)
Package Type: U-DFN2020-6 (Type C)
A1
A
U-DFN2020-6
Type C
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0.00
0.05
0.02
A3
0.15
b
0.25
0.35
0.30
D
1.95 2.075 2.00
D2
1.55
1.75
1.65
E
1.95 2.075
2.0
E2
0.86
1.06
0.96
e
0.65
L
0.25
0.35
0.30
Z
0.20
All Dimensions in mm
Seating Plane
D
D2
Pin #1 ID
E
E2
Z(4x)
L
b
e
Bottom View
Min/Max (in mm)
0.20/0.40
0.86/1.06
PART
MARKING
SURFACE
0.57/0.63
Top view
0.95/1.15
NEW PRODUCT
A3
Hall Sensor
Die
Pin1
Sensor Location (TBD)
AH8502
Document number: DS37683 Rev. 1 - 2
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AH8502
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
(1)
Package Type: U-DFN2020-6 (Type C)
X2
NEW PRODUCT
X1
Dimensions Value (in mm)
C
0.650
X
0.350
X1
1.650
X2
1.700
Y
0.525
Y1
1.010
Y2
2.400
Y
Y2
Y1
X
AH8502
Document number: DS37683 Rev. 1 - 2
C
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AH8502
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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AH8502
Document number: DS37683 Rev. 1 - 2
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