AP22800 5V SINGLE CHANNEL PROGRAMMABLE LOAD SWITCH Description Pin Assignments The AP22800 is an integrated N-channel load switch, which features an adjustable ramp-up and discharge rate that are settable via an external capacitor and a resistor, respectively. In addition, it incorporates a ‘power good’ output to flag when the switch is enhanced. The N-channel MOSFET has a typical RDS(ON) of 16mΩ, Top View enabling current handling capability of up to 4A. VIN 1 VIN 2 Bottom View 8 VOUT 8 7 VOUT 7 NEW PRODUCT GND The AP22800 is designed to operate from 1.5V to 5.5V making it ideal for 1.8V, 2.5V, 3.3V, 5V voltage rails. The low quiescent supply current specification of 21µA makes it ideal for use in battery powered distribution systems where power consumption is a concern. The AP22800 is available in a standard Green U-DFN2116-8 package with an exposed PAD for improved thermal performance and is RoHS compliant. 1.5V to 5.5V Input Range Low Typical RDS(ON) of 16mΩ Very Low Quiescent Current of 21µA Adjustable Start-Up and Discharge Rate Small Form Factor Package U-DFN2116-8 – Footprint of just 3.36mm2 Thermally Efficient Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Notes: VIN 2 VIN GND EN 3 6 DIS 6 3 EN SS 4 5 PG 5 4 SS U-DFN2116-8 Applications Features 1 Integrated Load Switches in Ultrabook PCs Power Up/Down Sequencing in Ultrabook PCs Tablets SSD (Solid State Drives) Consumer Electronics Telecom Systems Set-top Boxes E-Readers 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Typical Applications Circuit VIN VOUT CIN RDIS SS AP22800 DIS CL RL RPG CSS ON OFF AP22800 Document number: DS36046 Rev. 3 - 2 EN PG GND 1 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 NEW PRODUCT Pin Descriptions Pin Name Pin Number Function VIN 1, 2 EN 3 Enable Input, Active High. SS 4 Soft-Start Adjust. An external capacitor connected to this pin will set the ramp-up time of VOUT. PG 5 Power Good. Open-drain output to indicate when the switch is fully enhanced. DIS 6 VOUT 7, 8 GND PAD Input Voltage. Output Discharge. An external resistor between DIS and VOUT sets the discharge rate at VOUT when EN goes low. Output Voltage. This pin connects to the Source of the N-channel MOSFET. Ground. Functional Block Diagram VIN VOUT SS PG Charge Pump Power Power Good? Good DIS EN GND AP22800 Document number: DS36046 Rev. 3 - 2 2 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) (Note 4) Symbol NEW PRODUCT Ratings Units ESD HBM Human Body ESD Protection 2000 V ESD MM Machine Model ESD Protection 200 V Input Voltage 6.0 V VOUT Output Voltage 6.0 V VEN Enable Voltage 6.0 V Load Current 4.0 A +125 °C -55 to +150 °C VIN IL TJ(max) Maximum Junction Temperature TST Storage Temperature PD Power Dissipation RθJA RθJC Notes: Parameter (Note 5) 0.35 (Note 6) 1.42 (Note 5) 290 (Note 6) 71 W Thermal Resistance, Junction to Ambient °C/W Thermal Resistance, Junction to Case 8.5 °C/W 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state condition. 6. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady state condition. Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Units 1.5 5.5 V VIN Input Voltage Range VEN Enable Voltage Range 0 5.5 V VPG Power Good Voltage Range 0 5.5 V -40 +85 °C TA Operating Ambient Temperature AP22800 Document number: DS36046 Rev. 3 - 2 3 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Electrical Characteristics (@TA = +25°C, CIN = 1µF, CL = 100nF, unless otherwise specified.) VIN = 5.0V NEW PRODUCT Symbol Parameters Conditions Min Typ Max Unit IIN_Q Input Quiescent Current VEN = VIN, IOUT = 0A – 21 35 µA IIN_SD Input Shutdown Current VEN = 0V, IOUT = 0A, RDIS = 240Ω – 0.05 0.5 µA RDS(ON) Load Switch On-Resistance VEN = VIN, IOUT = −1A – 16 21 mΩ VIH_EN EN Input Logic High Voltage – 1.0 – – V VIL_EN EN Input Logic Low Voltage – – – 0.5 V ILEAK_EN EN Input Leakage VEN = VIN – – 0.1 µA RDS_DIS Discharge FET On-Resistance VEN = 0V, IDIS = 10mA – 4 6 Ω VOL_PG Power Good Output Low Level IOL_PG = 100µA, VEN = 0V – – 0.2 V IOZ_PG Power Good High-Impedance Current VPG = VIN, VEN = VIN – – 0.05 µA tRISE Output Rise Time RL = 10, CSS = 10nF – 130 – µs tON Output Turn-ON Delay Time RL = 10, CSS = 10nF – 90 – µs tFALL Output Fall Time RL = Open, RDIS = 240Ω, CSS = 10nF – 55 – µs tOFF Output Turn-OFF Delay Time RL = Open, RDIS = 240Ω, CSS = 10nF – 21 – µs tD Output Start Delay Time RL = 10, CSS = 10nF (Note 7) – 20 – µs tPG Power Good Delay Time RL = 10, CSS = 10nF – 410 – µs Min Typ Max Unit VIN = 3.3V Symbol Parameters Conditions IIN_Q Input Quiescent Current VEN = VIN, IOUT = 0A – 13 23 µA IIN_SD Input Shutdown Current VEN = 0V, IOUT = 0A, RDIS = 240Ω – 0.04 0.2 µA RDS(ON) Load Switch On-Resistance VEN = VIN, IOUT = −1A – 17 22 mΩ VIH_EN EN Input Logic High Voltage – 1.0 – – V VIL_EN EN Input Logic Low Voltage – – – 0.5 V ILEAK_EN EN Input Leakage VEN = VIN – – 0.1 µA RDS_DIS Discharge FET On-Resistance VEN = 0V, IDIS = 10mA – 5 8 Ω VOL_PG Power Good Output Low Level IOL_PG = 100µA, VEN = 0V – – 0.2 V IOZ_PG Power Good High-Impedance Current VPG = VIN, VEN = VIN – – 0.05 µA Output Rise Time RL = 10, CSS = 10nF – 130 – µs Output Turn-ON Delay Time RL = 10, CSS = 10nF – 90 – µs tFALL Output Fall Time RL = Open, RDIS = 240Ω, CSS = 10nF – 55 – µs tOFF Output Turn-OFF Delay Time RL = Open, RDIS = 240Ω, CSS = 10nF – 21 – µs tD Output Start Delay Time RL = 10, CSS = 10nF (Note 7) – 25 – µs tPG Power Good Delay Time RL = 10, CSS = 10nF – 340 – µs tRISE tON AP22800 Document number: DS36046 Rev. 3 - 2 4 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Electrical Characteristics (Cont. @ TA = +25°C, CIN = 1µF, CL = 100nF, unless otherwise specified.) VIN = 2.5V NEW PRODUCT Symbol Parameters Conditions Min Typ Max Unit IIN_Q Input Quiescent Current VEN = VIN, IOUT = 0A – 11 19 µA IIN_SD Input Shutdown Current VEN = 0V, IOUT = 0A, RDIS = 240Ω – 0.04 0.2 µA RDS(ON) Load Switch On-Resistance VEN = VIN, IOUT = −1A – 19 24 mΩ VIH_EN EN Input Logic High Voltage – 1.0 – – V VIL_EN EN Input Logic Low Voltage – – – 0.5 V ILEAK_EN EN Input Leakage VEN = VIN – – 0.1 µA RDS_DIS Discharge FET On-Resistance VEN = 0V, IDIS = 10mA – 6 9 Ω VOL_PG Power Good Output Low Level IOL_PG = 100µA, VEN = 0V – – 0.2 V IOZ_PG Power Good High-Impedance Current VPG = VIN, VEN = VIN – – 0.05 µA Output Rise Time RL = 10, CSS = 10nF – 125 – µs Output Turn-ON Delay Time RL = 10, CSS = 10nF – 95 – µs tFALL Output Fall Time RL = Open, RDIS = 240Ω, CSS = 10nF – 56 – µs tOFF Output Turn-OFF Delay Time RL = Open, RDIS = 240Ω, CSS = 10nF – 21 – µs tD Output Start Delay Time RL = 10, CSS = 10nF (Note 7) – 30 – µs tPG Power Good Delay Time RL = 10, CSS = 10nF – 310 – µs Min Typ Max Unit tRISE tON VIN = 1.8V Symbol Conditions IIN_Q Input Quiescent Current VEN = VIN, IOUT = 0A – 9 16 µA IIN_SD Input Shutdown Current VEN = 0V, IOUT = 0A, RDIS = 240Ω – 0.03 0.2 µA RDS(ON) Load Switch On-Resistance VEN = VIN, IOUT = −1A – 22 28 mΩ VIH_EN EN Input Logic High Voltage – 0.9 – – V VIL_EN EN Input Logic Low Voltage – – – 0.4 V ILEAK_EN EN Input Leakage VEN = VIN – – 0.1 µA RDS_DIS Discharge FET On-Resistance VEN = 0V, IDIS = 10mA – 8 12 Ω VOL_PG Power Good Output Low Level IOL_PG = 100µA, VEN = 0V – – 0.2 V IOZ_PG Power Good High-Impedance Current VPG = VIN, VEN = VIN – – 0.05 µA Output Rise Time RL = 10, CSS = 10nF – 130 – µs Output Turn-ON Delay Time RL = 10, CSS = 10nF – 100 – µs tFALL Output Fall Time RL = Open, RDIS = 240Ω, CSS = 10nF – 56 – µs tOFF Output Turn-OFF Delay Time RL = Open, RDIS = 240Ω, CSS = 10nF – 21 – µs tD Output Start Delay Time RL = 10, CSS = 10nF (Note 7) – 40 – µs tPG Power Good Delay Time RL = 10, CSS = 10nF – 300 – µs tRISE tON Note: Parameters 7. Guaranteed by design AP22800 Document number: DS36046 Rev. 3 - 2 5 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Test Circuit and tON/tOFF Waveforms 50% 50% VEN tON tOFF NEW PRODUCT 90% 50% 50% VOUT VOUT 90% 10% 10% tD tRISE tFALL 50% VPG tPG AP22800 Document number: DS36046 Rev. 3 - 2 6 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Performance Characteristics (@TA = +25°C, VIN = 5V, unless otherwise specified.) NEW PRODUCT RDS(ON) vs. VIN (IOUT=200mA) RDS(ON) vs. Ambient Temperature (IOUT=200mA) Input Quiescent Current vs. VIN Input Shutdown Current vs. VIN Turn On Response Time (VIN=5V, TA=+25°C, RL=10Ω, CSS=10nF, CL=1µF, CIN=1µF) AP22800 Document number: DS36046 Rev. 3 - 2 Turn Off Response Time (VIN=5V, TA=+25°C, RDIS=1kΩ, CSS=10nF, CL=1µF, CIN=1µF) 7 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Performance Characteristics (Cont. @ TA = +25°C, VIN = 5V, unless otherwise specified.) Turn Off Response Time (VIN=1.5V, TA=+25°C, RDIS=1kΩ, CSS=10nF, CL=1µF, CIN=1µF) NEW PRODUCT Turn On Response Time (VIN=1.5V, RL=10Ω, CSS=10nF, CL=1µF, CIN=1µF) tRISE vs. VIN (TA=+25°C, RL=10Ω, CSS=10nF, CL=1µF, CIN=1µF) tD vs. VIN (TA=+25°C, RL=10Ω, CSS=10nF, CL=1µF, CIN=1µF) tFALL vs. VIN (TA=+25°C, RDIS=1kΩ, CSS=10nF, CL=1µF, CIN=1µF) AP22800 Document number: DS36046 Rev. 3 - 2 tFALL vs. VIN (TA=+25°C, RDIS=240Ω, CSS=10nF, CL=0.1µF, CIN=1µF) 8 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Performance Characteristics (Cont. @ TA = +25°C, VIN = 5V, unless otherwise specified.) tOFF vs. VIN (TA=+25°C, RDIS=1kΩ, CSS=10nF, CL=1µF, CIN=1µF) NEW PRODUCT tON vs. VIN (TA=+25°C, RL=10Ω, CSS=10nF, CL=1µF, CIN=1µF) Application Information Theory of Operation The AP22800 is a load switch that can be used to isolate or power-down part of a system in order to reduce power consumption, particularly in battery-powered devices. The NMOS pass element in the AP22800 is turned on when EN pin is pulled high. This enables the internal charge pump, which then increases the voltage on the SS pin and provides an overdrive on the gate of the N-channel pass switch. When the voltage on the gate of the pass switch is around 1.6 times greater than VIN, power is deemed to be good, and the Power Good (PG) output is pulled high via an external pull-up resistor. The rise-time of the switch is controlled by the value of the capacitor on the SS pin. When EN is pulled low, the NMOS pass switch turns off and isolates VOUT from VIN. In addition, PG is pulled to ground to indicate that the power is no longer good. The DIS pin keeps VOUT grounded while EN is low. The fall time on VOUT is largely controlled by the value of the discharge resistor and the capacitance on the output. Input and Output Voltage The Input Voltage (VIN) should be between 1.5V and 5.5V. With the switch activated, the Output Voltage (VOUT) will be the input voltage minus the voltage drop across the device. Enable The GPIO compatible EN input allows the output current to be switched on and off. A high signal (switch on) should be at least 1V, and a low signal (switch off) no higher than 0.5V. The EN pin should not be left floating. It is advisable to hold EN low when applying or removing power. Power Good The PG output is an open drain output that indicates when the pass switch is enhanced enough to deliver current to the load. When the gate voltage rises to VIN 1.6, PG is pulled high via the external pull-up resistor. For example, if VIN = 5V, then PG goes high when the gate voltage of the pass switch reaches 8V, thus, providing an overdrive of 3V. PG is pulled low when power is deemed not to be good. PG can be pulled up to any voltage to a maximum of 5.5V, although it is recommended to utilize VOUT with a resistor greater than 50kΩ. The advantage of pulling up PG to VOUT is that when EN is low, VOUT is also grounded. Thus, no power is wasted in the pull-up resistor. If this feature is not required, then PG pin can be left floating. Input and Output Capacitors The input and output capacitors should be placed as close to VIN and VOUT pins as possible. The output capacitor should not be greater than the input capacitor, otherwise, current may flow backwards through the device after turn off. Typically, a 10μF input capacitor and a 1μF output capacitor should be placed close to VIN and VOUT pins. AP22800 Document number: DS36046 Rev. 3 - 2 9 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Application Information (Cont.) For heavier loads, it is recommended that the VIN and VOUT trace lengths be kept to a minimum. In addition, a bulk capacitor (≥ 10μF) may also be placed close to the VOUT pin. If using a bulk capacitor on VOUT, it is important to control the inrush current by choosing an appropriate softstart time in order to minimize the droop on the input supply. Adjustable Slew Rate/Soft-Start The SS pin allows the output ramp time of the switch to be controlled using an external capacitor (CSS). The capacitor voltage rises to NEW PRODUCT approximately twice the value of VIN. Table 1 shows typical rise times (in µs) associated with various timing capacitors at different VIN values. Output Voltage Rise Time (in μs) Measured at +25°C Using 0805 X7R 10% 25V Ceramic Capacitors VIN 1.8V 2.5V 3.3V 5.0V VSS CSS 3.5V 4.8V 6.4V 9.7V 470pF 6.9 7.0 7.1 7.3 1nF 12.0 12.1 12.3 14.3 10nF 120 127 135 145 47nF 626 636 652 692 100nF 1305 1320 1340 1420 470nF 6320 6400 6660 7020 1000nF 13400 13040 13120 13800 Table 1. Timing Capacitors and Rise Times Extra capacitance will allow further increase in rise time if desired. The timing capacitor should have a breakdown voltage of at least 25V to allow for a high voltage on this pin. Adjustable Discharge When EN goes low, VOUT is discharged to ground through the discharge resistor (RDIS). The discharge/fall time on VOUT is largely controlled by RDIS and by the output capacitor. The data in Table 2 shows typical fall times associated with various discharge resistors with CL = 1μF, for different values of VIN. Fall Time (in ms) Measured at +25°C, with CL = 1μF, RL = Open 1206 250mW 1% Discharge Resistor (Ω) 1.8V 2.5V 3.3V 5V 100 0.25 0.26 0.26 0.27 470 1.07 1.09 1.12 1.18 1000 2.28 2.32 2.40 2.54 4700 10.42 10.65 10.90 11.50 10000 23.33 24.30 24.50 25.05 Table 2. Discharge Resistors and Output Voltage Fall Times AP22800 Document number: DS36046 Rev. 3 - 2 10 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Board Layout and Thermal Considerations NEW PRODUCT Due to the high current capacity of the load switch, PCB layout needs to ensure good thermal distribution during operation. The top and bottom of AP22800EV1, the evaluation board for the AP22800, can be seen below. Figure 1. PCB Copper Layout & Silk Screen – Top Figure 2. PCB Copper Layout & Silk Screen – Bottom Thermal vias are used directly underneath the chip to help distribute the heat from the device. The ground plane on the underside of the board effectively acts as a large heatsink. The widths of the tracks carrying VIN and VOUT are kept wide. Vias are also distributed around the board to aid thermal conduction and to ensure a consistent potential, particularly around the ground connections of the capacitors. All capacitors used are located as close as possible to the AP22800 to minimize any parasitic effects. The maximum junction temperature of the AP22800 is +125°C. To ensure that this is not exceeded, the following equation can be used to give an approximation of junction temperature. Temperature readings taken with a thermal camera can also give a good approximation of power dissipation with the use of this equation. The board layout has a major influence on the parameter . where, = Junction temperature (°C) = Ambient temperature (°C) = Junction to ambient thermal impedance (°C/W) = Power dissipation (voltage drop across device AP22800 Document number: DS36046 Rev. 3 - 2 output current) (W) 11 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Ordering Information AP22800 XX - 7 Package NEW PRODUCT HB : U- DFN2116-8 Packing -7 : Tape & Reel 7” Tape and Reel Part Number Package Code AP22800HB-7 HB Packaging U-DFN2116-8 Quantity Part Number Suffix 3000/Tape & Reel -7 Marking Information U-DFN2116-8 ( Top View ) XX YW X AP22800 Document number: DS36046 Rev. 3 - 2 XX : Identification Code Y : Year : 0~9 W : Week : A~Z : 1~26 Week; a~z : 27~52 Week; z Represents 52 and 53 Week X : Internal Code Part Number Package Identification Code AP22800HB-7 U-DFN2116-8 WA 12 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. (1) Package Type: U-DFN2116-8 A3 A A1 U-DFN2116-8 NEW PRODUCT Seating Plane D D2 (Pin #1 ID) C'0.2x45° D2/2 00 1 0. E2/2 R E E2 (0.600) L Dim Min Max Typ A 0.545 0.605 0.575 A1 0.000 0.050 0.020 A3 - - 0.130 b 0.200 0.300 0.250 D 2.050 2.175 2.100 D2 1.600 1.800 1.700 E 1.550 1.675 1.600 E2 0.300 0.500 0.400 e - - 0.500 L 0.275 0.375 0.325 Z - - 0.175 All Dimensions in mm b e Z Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package Type: U-DFN2116-8 X2 C Y Y1 X1 Pin1 C Value (in mm) 0.500 X 0.300 X1 1.750 X2 1.800 Dimensions Y2 Y 0.600 Y1 0.450 Y2 2.050 X AP22800 Document number: DS36046 Rev. 3 - 2 13 of 14 www.diodes.com January 2015 © Diodes Incorporated AP22800 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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