A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS(on) max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V 3.0A 30V Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • • • • • DC-DC Converters Power management functions Disconnect switches Portable applications DFN3020B-8 D2 D2 Top View Case: DFN3020B-8 Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) D1 S2 G1 G1 D2 G2 S1 S1 Bottom View Pin-Out Bottom View D1 D1 D1 D2 G2 Low profile package, for thin applications Low RθJA, thermally efficient package 2 6mm footprint, 50% smaller than TSOP6 and SOT23-6 Low on-resistance Fast switching speed “Lead-Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Pin 1 S2 Equivalent Circuit Ordering Information (Note 3) Part Number ZXMN3AMCTA Notes: Marking DNB Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DNB ZXMN3AMC Document number: DS35087 Rev. 1 - 2 DNB = Product Type Marking Code Top View, Dot Denotes Pin 1 1 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3AMC Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body diode) Pulse Source Current (Body diode) Thermal Characteristics (Notes 4 & 7) TA = 70°C (Notes 4 & 7) (Notes 3 & 7) (Notes 6 & 7) (Notes 4 & 7) (Notes 6 & 7) ID IDM IS ISM Unit Value 1.50 12 2.45 19.6 1.13 9 1.70 13.6 83.3 51.0 111 73.5 17.1 -55 to +150 Unit V A @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 3 & 7) Power Dissipation Linear Derating Factor (Notes 4 & 7) PD (Notes 5 & 7) (Notes 5 & 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: Value 30 ±20 3.7 3.0 2.9 13 3.2 13 (Notes 3 & 7) (Notes 4 & 7) (Notes 5 & 7) (Notes 5 & 8) (Notes 7 & 9) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2 3. For a device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half. 4. Same as note (3) except the device is measured at t < 5 sec. 5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper. 6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMN3AMC Document number: DS35087 Rev. 1 - 2 2 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3AMC RDS(on) Limited 10 ID Drain Current (A) Max Power Dissipation (W) Thermal Characteristics 1 DC 1s 100ms 100m 10m 10ms 8 sq cm 2oz Cu One active die Single Pulse, Tamb=25°C 1ms 100us 1 10 2.0 10 sq cm 1oz Cu Two active die 1.5 8 sq cm 2oz Cu One active die 10 sq cm 1oz Cu One active die 1.0 0.5 0.0 0 VDS Drain-Source Voltage (V) 25 50 75 100 125 150 Temperature (°C) Derating Curve Safe Operating Area 225 Thermal Resistance (°C/W) 80 Thermal Resistance (°C/W) 8 sq cm 2oz Cu One active die 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k 200 1oz Cu One active die 175 1oz Cu Two active die 150 125 100 75 50 2oz Cu One active die 2oz Cu Two active die 25 0 0.1 Pulse Width (s) 1 10 100 Board Cu Area (sqcm) Transient Thermal Impedance Thermal Resistance v Board Area 3.5 PD Dissipation (W) 3.0 2.5 2.0 2oz Cu Two active die T amb=25°C T j max=150°C Continuous 2oz Cu One active die 1.5 1.0 0.5 1oz Cu One active die 0.0 0.1 1 1oz Cu Two active die 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ZXMN3AMC Document number: DS35087 Rev. 1 - 2 3 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3AMC Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 0.5 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 RDS(ON) - gfs VSD trr Qrr - 3.0 0.120 0.180 0.95 - V Static Drain-Source On-Resistance (Note 10) 0.100 0.140 3.5 0.85 17.7 13.0 S V ns nC ID = 250μA, VDS = VGS VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2.0A VDS = 10V, ID = 2.5A IS = 1.7A, VGS = 0V Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 190 38 20 2.3 3.9 0.6 0.9 1.7 2.3 6.6 2.9 - pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Note 10 & 11) Diode Forward Voltage (Note 10) Reverse Recover Time (Note 11) Reverse Recover Charge (Note 11) DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 12) Total Gate Charge (Note 12) Gate-Source Charge (Note 12) Gate-Drain Charge (Note 12) Turn-On Delay Time (Note 12) Turn-On Rise Time (Note 12) Turn-Off Delay Time (Note 12) Turn-Off Fall Time (Note 12) Notes: Ω Test Condition IS = 2.5A, di/dt = 100A/µs VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 4.5V VGS = 10V VDS = 15V ID = 2.5A VDS = 15V, ID = 2.5A VGS = 10V, RG = 6Ω 10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%. 11. For design aid only, not subject to production testing. 12. Switching characteristics are independent of operating junction temperature. ZXMN3AMC Document number: DS35087 Rev. 1 - 2 4 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3AMC Typical Electrical Characteristics 10V 7V T = 150°C 5V 4.5V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 4V 3.5V 1 3V VGS 0.1 2.5V 0.1 1 10 5V 4.5V 4V 3.5V 3V 2.5V VGS 0.1 2V 10 0.1 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 VDS = 10V T = 150°C 1 T = 25°C 0.1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Normalised RDS(on) and VGS(th) 10 ID Drain Current (A) 7V 1 VDS Drain-Source Voltage (V) VGS = 10V 1.4 1.0 3.5V VGS 4V 4.5V 1 5V 7V 0.1 10V T = 25°C 0.1 1 ID Drain Current (A) 10 On-Resistance v Drain Current ZXMN3AMC Document number: DS35087 Rev. 1 - 2 VGS(th) 0.8 VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) 3V RDS(on) Tj Junction Temperature (°C) Typical Transfer Characteristics 2.5V ID = 2.5A 1.2 VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (W) 10V 10 T = 150°C 1 T = 25°C 0.1 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3AMC Typical Electrical Characteristics - Continued 10 VGS = 0V 250 f = 1MHz 200 CISS 150 COSS CRSS 100 50 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) C Capacitance (pF) 300 ID = 2.5A 8 6 VDS = 15V 4 2 0 0 1 2 3 4 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN3AMC Document number: DS35087 Rev. 1 - 2 Switching time test circuit 6 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3AMC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 Z b e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXMN3AMC Document number: DS35087 Rev. 1 - 2 Dimensions C G G1 X X1 Y Y1 Y2 7 of 8 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3AMC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com ZXMN3AMC Document number: DS35087 Rev. 1 - 2 8 of 8 www.diodes.com December 2010 © Diodes Incorporated