SBR1045D1Q

SBR1045D1Q
10A SBR®
SUPER BARRIER RECTIFIER
Product Summary
VRRM (V)
45
IO (A)
10
Features
VF MAX (V) @+25°C
0.58


IR MAX (mA) @+25°C
0.3
100% Avalanche Tested.
Patented SBR technology provides a superior avalanche
capability than schottky diodes ensuring more rugged and
reliable end applications.
Reduced ultra-low forward voltage drop (VF); better efficiency
and cooler operation.
Reduced high temperature reverse leakage; increased reliability
against thermal runaway failure at high temperature
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This Super Barrier Rectifier (SBR) diode has been designed to meet



the stringent requirements of Automotive Applications. It is ideally
suited to use as :

Polarity Protection Diode

Re-circulating Diode

Switching Diode
Mechanical Data


Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)



3
Top View
Polarity
Ordering Information (Note 4)
Part Number
SBR1045D1Q-13
Notes:
Compliance
Automotive
Case
TO252 (DPAK)
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SBR
1045
YYWW AB
SBR1045 = Product Type Marking Code
AB = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 13 = 2013)
WW = Week (01 - 53)
SBR is a registered trademark of Diodes Incorporated.
SBR1045D1Q
Document number: DS36362 Rev. 1 - 2
1 of 5
www.diodes.com
June 2013
© Diodes Incorporated
SBR1045D1Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Repetitive Peak Avalanche Power (1µs, +25°C)
Non-Repetitive Avalanche Energy
(TJ = +25°C, IAS = 12A, L = 10mH)
Symbol
VRRM
VRWM
VRM
VR(RMS)
IO
Value
Unit
45
V
32
10
V
A
IFSM
90
A
PARM
5000
W
EAS
200
mJ
Symbol
Value
Unit
RΘJA
RΘJC
TJ, TSTG
29
3
-55 to +150
Thermal Characteristics
Characteristic
Typical Thermal Resistance
Thermal Resistance Junction to Ambient (Note 5)
Thermal Resistance Junction to Case (Note 5)
Operating and Storage Temperature Range
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 6)
Symbol
V(BR)R
Min
45
Typ

Max

Unit
V
Forward Voltage Drop
VF




0.42
0.37
0.53
0.50


0.58

V
Leakage Current (Note 6)
IR


150
50
300

µA
mA
Total Capacitance
CT

400

pF
Test Condition
IR = 0.5mA
IF = 5A, TJ = +25°C
IF = 5A, TJ = +125°C
IF = 10A, TJ = +25°C
IF = 10A, TJ = +125°C
VR = 45V, TJ = +25°C
VR = 45V, TJ = +125°C
VR = 5V, f = 1MHz
TJ = +25°C
5. Device mounted on polymide substrate, 240mm2 Copper pad, double-sided PC Board.
6. Short duration pulse test used to minimize self-heating effect.
Notes:
IF, INSTANTANEOUS FORWARD CURRENT (A)
5.0
PD, POWER DISSIPATION (W)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
100
10
TA = 150°C
1
T A = 125°C
0.1
0.01
TA = 85°C
TA = 25°C
0.001
TA = -55°C
0.0001
0
200
400
600
800
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
Notes:7. Polymide, 2oz. Copper 16x minimum recommended pad layout per http://www.diodes.com
SBR is a registered trademark of Diodes Incorporated.
SBR1045D1Q
Document number: DS36362 Rev. 1 - 2
2 of 5
www.diodes.com
June 2013
© Diodes Incorporated
10,000
100,000
f=1MHz
TA = 150°C
10,000
TA = 125°C
T A = 85°C
1,000
CT, TOTAL CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE CURRENT (uA)
SBR1045D1Q
1,000
100
TA = 25°C
10
1
TA = -55°C
0.1
100
0.1
0
5
10 15 20 25 30 35 40 45
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
7
DC
6
150
TJ = 150°C
RJA = 44°C/W
(Note 5)
IAV
Duty =
IPK
TA, DERATED AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
8
125
IAV
IPK = 2
5
100
IAV
IPK = 3.33
4
IAV
IPK = 10
3
2
IAV
IPK = 20
1
0
25
1
10
100
VR, DC REVERSE VOLTAGE (V)
Fig. 4 Total Capacitance vs. Reverse Voltage
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Forward Current Derating Curve
150
75
50
25
0
0
5
10 15 20 25 30 35 40
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Operating Temperature Derating
45
Notes:8. Polymide, 2oz. Copper 16x minimum recommended pad layout per http://www.diodes.com
1,000
P(PK), PEAK TRANSIENT POIWER (W)
PARM, MAXIMUM AVALANCHE POWER (W)
100,000
10,000
1,000
100
10
1
0.01
0.1
1
10
100
TP, PULSE DURATION (µS)
Fig. 7 Maximum Avalanche Power Curve
800
Single Pulse
RJA = 65 C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
600
400
200
0
1,000
t1, PULSE DURATION TIME (sec)
Figure 8 Single Pulse Maximum Power Dissipation
SBR is a registered trademark of Diodes Incorporated.
SBR1045D1Q
Document number: DS36362 Rev. 1 - 2
3 of 5
www.diodes.com
June 2013
© Diodes Incorporated
SBR1045D1Q
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * RJA
RJA = 65°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIMES (sec)
Figure 9 Transient Thermal Resistance
1,000
10,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
A
b3
c2
L3
A2
D
E1
H
L4
A1
L
e
2X b2
3X b
a
TO252
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21


e
2.286


E 6.45 6.70 6.58
E1 4.32


H 9.40 10.41 9.91
L
1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Z
X1
X2
Y1
Y2
C
E1
Y2
C
Z
Y1
X1
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
E1
SBR is a registered trademark of Diodes Incorporated.
SBR1045D1Q
Document number: DS36362 Rev. 1 - 2
4 of 5
www.diodes.com
June 2013
© Diodes Incorporated
SBR1045D1Q
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Copyright © 2013, Diodes Incorporated
www.diodes.com
SBR is a registered trademark of Diodes Incorporated.
SBR1045D1Q
Document number: DS36362 Rev. 1 - 2
5 of 5
www.diodes.com
June 2013
© Diodes Incorporated