BTS436L2 Smart High-Side Power Switch Product Summary Operating voltage On-state resistance Nominal load current Current limitation Functions Very low standby current CMOS compatible input Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD) Green Product (RoHS compliant) AEC Qualified Vbb(on) RON IL(NOM) IL(SCr) 4.7... 41 V 38 m 9.8 A 40 A PG-TO263-5-2 Applications µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions Diagnostic Function Diagnostic feedback with open drain output Open load detection in ON-state Feedback of thermal shutdown in ON-state Data Sheet 1 2013-10-10 BTS436L2 Functional diagram overvoltage protection internal voltage supply logic gate control + charge pump current limit VBB clamp for inductive load OUT temperature sensor IN ESD LOAD Open load detection ST GND PROFET Pin Definitions and Functions Pin configuration Pin Symbol Function 1 GND Logic ground 2 IN Input, activates the power switch in case of logical high signal 3 Vbb Positive power supply voltage The tab is shorted to pin 3 4 ST Diagnostic feedback, low on failure 5 OUT Output to the load Tab Vbb Positive power supply voltage The tab is shorted to pin 3 Data Sheet 2 (top view) Tab = VBB 1 2 GND IN (3) 4 5 ST OUT 2013-10-10 BTS436L2 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for short circuit protection Tj Start=-40 ...+150°C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V 2) RI = 2 , RL= 4.0 , td= 200 ms, IN= low or high Load current (Current limit, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 °C Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. 4 (See diagram on page 8) IL(ISO) = 9.8 A, RL = 0 , E )AS=0.33J: Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: Symbol Vbb Vbb VLoad dump3 IL Tj Tstg Ptot ZL VESD Values 43 24 Unit V V 60 V self-limited -40 ...+150 -55 ...+150 75 A °C 5.0 1.0 4.0 8.0 mH kV -10 ... +16 2.0 5.0 V mA Values typ max -- 1.75 -75 33 -- Unit W acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5k; C=100pF Input voltage (DC) Current through input pin (DC) Current through status pin (DC) VIN IIN IST see internal circuit diagrams page 7 Thermal Characteristics Parameter and Conditions Thermal resistance 1) 2) 3) 4) 5) Symbol chip - case: RthJC junction - ambient (free air): RthJA device on pcb5): min ---- K/W Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 EAS is the maximum inductive switch-off energy Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 3 2013-10-10 BTS436L2 Electrical Characteristics Parameter and Conditions Symbol at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A; VBB 7V Tj=25 °C: RON Tj=150 °C: -- 35 64 38 72 m 8.8 9.8 -- A -- -- 2 mA 50 50 100 120 200 250 s dV /dton 0.1 -- 1 V/s -dV/dtoff 0.1 -- 1 V/s 4.75 41 43 -52 8 25 10 V 41 43 ---- ---47 5 -1 -- 0.8 1.4 see diagram, page 9 Nominal load current, (pin 3 to 5) IL(ISO) ISO 10483-1, 6.7:VON=0.5V, TC=85°C Output current (pin 5) while GND disconnected or GND pulled up6), Vbb=30 V, VIN= 0, IL(GNDhigh) see diagram page 7 Turn-on time IN Turn-off time IN RL = 12 , Slew rate on 10 to 30% VOUT, RL = 12 , Slew rate off 70 to 40% VOUT, RL = 12 , to 90% VOUT: ton to 10% VOUT: toff Operating Parameters Operating voltage Tj =-40 Vbb(on) Tj =+25...+150°C: Overvoltage protection7) Tj =-40°C: Vbb(AZ) Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) 8) Tj=-40...+25°C: Ibb(off) VIN=0; see diagram on page 9 Tj= 150°C: IL(off) Off-State output current (included in Ibb(off)) VIN=0 Operating current 9), VIN=5 V IGND 6) 7) 8) 9) V A A mA not subject to production test, specified by design Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and circuit diagram page 7. Measured with load Add IST, if IST > 0, add IIN, if VIN>5.5 V Data Sheet 4 2013-10-10 BTS436L2 Parameter and Conditions Symbol at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Protection Functions10) Current limit (pin 3 to 5) Values min typ max Unit IL(lim) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 11) Thermal shutdown time11) Tj,start = 25°C: toff(SC) 46 39 30 58 51 38 68 58 46 A --- 40 1.9 --- A ms 41 43 150 --- 47 -10 -- 52 --32 V °C K V -- 600 -- mV IL (OL) 100 -- 900 mA RI 2.5 3.5 6 k VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL4) 1.7 1.5 -1 20 100 --0.5 -50 520 3.2 --50 90 900 V V V A A s IST = +1.6 mA: VST(high) IST = +1.6 mA: VST(low) 5.4 -- 6.1 -- -0.4 V (see timing diagrams on page 11) (see timing diagrams on page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 12) Reverse battery voltage drop (Vout > Vbb)13 ) IL = -2 A Tj=150 °C: Diagnostic Characteristics Open load detection current VON(CL) Tjt Tjt -Vbb -VON(rev) (on-condition) 14 Input and Status Feedback ) Input resistance see circuit page 7 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 5 V Delay time for status with open load after switch off (see timing diagrams on page 11) Status output (open drain) Zener limit voltage ST low voltage 10) 11) 12) 13) 14) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7). not subject to production test, specified by design If a ground resistor RGND is used, add the voltage drop across this resistor. Data Sheet 5 2013-10-10 BTS436L2 Truth Table Normal operation Open load Overtemperature L = "Low" Level H = "High" Level Data Sheet Input Output Status level L H L H L H level L H Z H L L BTS 436L2 H H H L H L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11) 6 2013-10-10 BTS436L2 Overvolt. and reverse batt. protection Terms + 5V + Vbb Ibb 2 IN V IN IN IL OUT PROFET 4 VST V Vbb I ST V R ST 3 I IN Logic 5 R ST ST GND 1 R Z2 VON ST bb RI OUT V IGND VOUT PROFET Z1 GND GND R Load R GND Signal GND VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active Input circuit (ESD protection) R IN I ESD-ZD I I Load GND Open-load detection in on-state Open load, if VON < RON·IL(OL); IN high I GND + V bb The use of ESD zener diodes as voltage clamp at DC conditions is not recommended Status output VON ON +5V R ST(ON) OUT ST GND Open load detection Logic unit ESDZD GND disconnect ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. 3 Inductive and overvoltage output clamp 2 IN PROFET + V bb V Z 4 V VON OUT GND Vbb bb V IN V ST OUT 5 ST GND 1 V GND Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. P R OFE T VON clamped to 47 V typ. Data Sheet 7 2013-10-10 BTS436L2 GND disconnect with GND pull up Inductive Load switch-off energy dissipation E bb 3 2 IN Vbb E AS PROFET 4 OUT 5 IN ST GND V bb V = V IN ST OUT PROFET 1 V ELoad Vbb ST EL GND GND ZL L { RL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is 3 high 2 IN Vbb PROFET 4 OUT EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, 5 with an approximate solution for RL 0 : ST IL· L IL·RL EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V ) L OUT(CL)| GND 1 V Maximum allowable load inductance for a single switch off bb L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 ZL [mH] For inductive load currents up to the limits defined by Z L (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection. 1000 100 10 1 0.1 0 2 4 6 10 12 14 16 18 IL [A] Data Sheet 8 2013-10-10 BTS436L2 Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [m] 80 70 Tj = 150°C 60 50 40 25°C 30 -40°C 20 10 3 5 7 9 30 40 Vbb [V] Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [A] 45 40 35 30 25 20 15 10 5 0 -50 Data Sheet 0 50 100 150 200 Tj [°C] 9 2013-10-10 BTS436L2 Timing diagrams Figure 2b: Switching a lamp, Figure 1a: Vbb turn on: IN IN V bb ST V OUT V ST open drain I t OUT L t proper turn on under all conditions The initial peak current should be limited by the lamp and not by the current limit of the device. Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: Figure 2c: Switching an inductive load IN IN V ST 90% t on dV/dton dV/dtoff t V off OUT 10% I I t L I L(OL) t *) if the time constant of load is too large, open-load-status may occur Data Sheet 10 2013-10-10 BTS436L2 Figure 3a: Short circuit shut down by overtemperature, reset by cooling IN Figure 5a: Open load: detection in ON-state, open load occurs in on-state other channel: normal operation IN t d(ST OL) I t ST d(ST OL) L I L(lim) I t VOUT L(SCr) off(SC) ST I normal open normal L t t Heating up of the chip may require several milliseconds, depending on external conditions td(ST OL) = 10 s typ. Figure 4a: Overtemperature: Reset if Tj <Tjt Figure 5b: Open load: turn on/off to open load IN IN ST t d(STOL4) ST I V L OUT t T J t Data Sheet 11 2013-10-10 BTS436L2 Package and Ordering Code All dimensions in mm Published by Infineon Technologies AG, D-81726 München © Infineon Technologies AG 2013 All Rights Reserved. PG-TO263-5-2 Sales code BTS436L2G Ordering code: SP001104828 Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 12 2013-10-10