VISHAY GSD2004A-V

GSD2004A-V
Vishay Semiconductors
Dual Common-Anode Small-Signal High-Voltage Switching
Diode
Features
2
• Silicon Epitaxial Planar Diode
• Fast switching dual common-anode
diode, especially suited for applications
requiring high voltage capability
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
3
1
1
2
3
17033
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
GSD2004A-V
Ordering code
Marking
Remarks
GSD2004A-V-GS18 or GSD2004A-V-GS08
DBA
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
240
V
VRRM
300
V
IF
225
mA
IFRM
625
mA
tp = 1 μs
IFSM
4
A
tp = 1 s
IFSM
1
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward
current
Ptot
Power dissipation
1)
350
A
1)
mW
Device on Fiberglass Substrate, see layout on bottom of second page
Document Number 85727
Rev. 1.5, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
GSD2004A-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
3571)
°C/W
Tj
150
°C
Tstg
- 65 to + 150
°C
Typical thermal resistance
junction to ambient air
Junction temperature
Storage temperature range
1)
Device on Fiberglass Substrate, see layout on bottom of second page
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Test condition
Symbol
Min.
Reverse breakdown voltage
Parameter
IR = 100 μA
VBR
300
Leakage current
VR = 240 V
VR = 240 V, Tj = 150 °C
Unit
IR
100
nA
IR
100
μA
V
IF = 20 mA
VF
0.87
V
VF
1
V
VF = VR = 0, f = 1 MHz
CD
5
pF
IF = IR = 30 mA, Irr = 3 mA,
RL = 100 Ω
trr
50
ns
Diode capacitance
1)
Max.
IF = 100 mA
Forward voltage
Reverse recovery time
Typ.
0.83
Device on Fiberglass Substrate, see layout on bottom of second page
Typical Characteristics
I F - Forward Current ( mA )
100
T J = 150 ° C
10
100 ° C
1
25 ° C
0.1
100 200 300 400 500 600 700 800 900 1000
18543
VF - Forward Voltage ( mV )
Figure 1. Typical Instantaneous Forward Characteristics
www.vishay.com
2
IR - Reverse Leakage Current ( nA )
Tamb = 25 °C unless otherwise specified
10 5
T J = 150 ° C
10 4
100 ° C
10 3
10 2
25 ° C
10
0
18544
50
100
150
200
250
VR - Reverse Voltage ( V )
Figure 2. Typical Reverse Characteristics
For technical questions within your region, please contact one of the following: Document Number 85727
[email protected], [email protected], [email protected]
Rev. 1.5, 12-Aug-10
GSD2004A-V
Vishay Semiconductors
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Package Dimensions in millimeters (inches): SOT-23
0.9 (0.035)
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
1.43 (0.056)
1 (0.039)
0.9 (0.035)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Document Number 85727
Rev. 1.5, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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www.vishay.com
Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000