DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI5 Features Mechanical Data BVCEO = -200V Case: PowerDI®5 IC = -2A High Continuous Collector Current ICM = -5A Peak Collector Current Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 PD up to 3.2W Moisture Sensitivity: Level 1 per J-STD-020 43% smaller than SOT223; 60% smaller than TO252 (DPAK) Maximum height just 1.1mm Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Weight: 0.093 grams (Approximate) Application DC – DC Conversion Telecoms Power Management C C B E Top View Bottom View B E Device Schematic Pin-Out Diagram Reel size (inches) 13 Tape width (mm) 16 Ordering Information (Note 4) Product DXTP03200BP5-13 Notes: Compliance AEC-Q101 Marking DTP3200B Quantity per reel 5,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DTP3200B YYWWK DTP3200B = Product Type Marking Code = Manufacturers’ Code Marking K = Factory Designator YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 09 for 2009) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated DXTP03200BP5 Document number: DS32068 Rev. 3 - 2 1 of 7 www.diodes.com December 2015 © Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Peak Pulse Current Symbol VCBO VCEO VEBO IC IB ICM Value -220 -200 -7 -2 -1 -5 Unit V V V A A A Value 3.2 39 1.7 75 0.74 169 5.6 -55 to +150 Unit W °C/W W °C/W W °C/W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Air (Note 6) Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient Air (Note 7) Thermal Resistance, Junction to Lead (Note 8) Operating and Storage Temperature Range Symbol PD RJA PD RJA PD RJA RJL TJ, TSTG ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. Device mounted on FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm. 6. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm. 7. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout. 8 Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DXTP03200BP5 Document number: DS32068 Rev. 3 - 2 2 of 7 www.diodes.com December 2015 © Diodes Incorporated DXTP03200BP5 3.5 Max Power Dissipation (W) -IC Collector Current (A) 10 1 VCE(sat) 100m Limited DC 1s 100ms 10ms 1ms 10m 100µs Single Pulse. T amb=25°C 1oz 25mm x 25mm FR4 1m 100m 1 10 100 -VCE Collector-Emitter Voltage (V) 3.0 2.5 2oz 50mm x 50mm 2.0 1oz 25mm x 25mm 1.5 1oz min copper 1.0 0.5 0.0 0 25 50 75 100 125 150 175 Temperature (°C) Safe Operating Area Derating Curve 70 1oz 25mm x 25mm FR4 60 50 D=0.5 40 30 20 D=0.2 Single Pulse 10 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) 80 Single Pulse. T amb=25°C 100 1 100µ 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation T (amb)=25°C T (amb)=25°C Power Rating (W) 160 140 1 oz. weight Copper 120 100 80 60 20 10 1m 4 180 40 1oz 25mm x 25mm FR4 10 Transient Thermal Impedance Thermal Resistance (°C/W) ADVANCE INFORMATION Thermal Characteristics and Derating Information 2 oz. weight Copper 100 1000 10000 3 2 oz. weight Copper 2 1 1 oz. weight Copper 0 10 100 Copper Area (sq mm) Thermal Resistance vs. Cu Area DXTP03200BP5 Document number: DS32068 Rev. 3 - 2 1000 10000 Copper Area (sq mm) Power Rating vs. Cu Area 3 of 7 www.diodes.com December 2015 © Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO Min -220 -200 -7 Collector Cutoff Current ICBO Emitter Cutoff Current IEBO Collector-Emitter Saturation Voltage (Note 10) VCE(sat) Base-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-On Voltage (Note 10) VBE(sat) VBE(on) Typ -245 -225 -8.4 <1 <1 Max -50 -0.5 -10 Unit V V V nA µA nA -37 -130 -135 -180 -50 -155 -160 -275 mV -955 -860 -1,100 -1,000 mV mV hFE 100 100 20 195 170 50 5 300 Transition Frequency fT 105 MHz Output Capacitance Delay Time Rise Time Storage Time Fall Time Cobo td tr ts tf 31 21 18 680 75 pF ns ns ns ns DC Current Gain (Note 10) Note: Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -200V VCB = -200V, TA = +100°C VEB = -6V IC = -0.1A, IB = -10mA IC = -0.5A, IB = -25mA IC = -1A, IB = -100mA IC = -2A, IB = -400mA IC = -2A, IB = -400mA VCE = -5V, IC = -2A VCE = -5V, IC = -10mA VCE = -5V, IC = -1A VCE = -5V, IC = -2A VCE = -5V, IC = -5A VCE = -10V, IC = -100mA, f = 50MHz VCB = -10V, f = 1MHz VCC = -50V, IC = -1A, IB1 = -IB2 = -100mA 10. Pulse Test: Pulse width 300µs. Duty cycle 2.0%. DXTP03200BP5 Document number: DS32068 Rev. 3 - 2 4 of 7 www.diodes.com December 2015 © Diodes Incorporated DXTP03200BP5 1 0.4 Tamb=25°C IC/IB=10 100m 0.3 - VCE(sat) (V) - VCE(sat) (V) IC/IB=20 IC/IB=10 0.2 150°C 100°C 0.1 IC/IB=5 10m 1m 10m 100m 1 100m VCE(sat) v IC VCE=5V 1.0 -55°C IC/IB=5 150°C 25°C 300 250 100°C - VBE(sat) (V) Typical Gain (hFE) 1 - IC Collector Current (A) VCE(sat) v IC 350 25°C -55°C 0.0 10m - IC Collector Current (A) 200 150 25°C 100 50 0.8 0.6 150°C 0.4 100°C -55°C 0 1m 10m 100m 0.2 1m 1 10m 100m 1 - IC Collector Current (A) - IC Collector Current (A) hFE v IC VBE(sat) v IC 700 VCE=5V -55°C 0.8 0.6 150°C 0.4 100°C 0.2 1m 10m 100m 1 500 400 300 Cibo 200 100 0 10m 100m 1 10 100 Capacitance v Voltage VBE(on) v IC Document number: DS32068 Rev. 3 - 2 Cobo - Voltage(V) - IC Collector Current (A) DXTP03200BP5 f = 1MHz 600 25°C Capacitance (pF) 1.0 - VBE(on) (V) ADVANCE INFORMATION Typical Characteristics 5 of 7 www.diodes.com December 2015 © Diodes Incorporated DXTP03200BP5 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E1 A1 ADVANCE INFORMATION E1/2 e ® 1° POWERDI 5 Dim Min Max Typ A 1.05 1.15 1.10 A1 0.00 0.05 -A2 0.33 0.43 0.381 b1 0.80 0.99 0.89 b2 1.70 1.88 1.78 D 3.90 4.05 3.966 D2 --3.054 E 6.40 6.60 6.504 e --1.84 E1 5.30 5.45 5.37 E2 --3.549 L 0.75 0.95 0.85 L1 0.50 0.65 0.57 W 1.10 1.41 1.255 All Dimensions in mm 10 °± b2 D 2X b1 E/2 A 5° E ±1 ° A2 °± 10 1° 5° ± 1° E2 L1 L1 W D2 L L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions C G X X1 Y Y1 Y1 G Value (in mm) 1.840 0.852 1.390 3.360 1.400 4.860 Y X C Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. DXTP03200BP5 Document number: DS32068 Rev. 3 - 2 6 of 7 www.diodes.com December 2015 © Diodes Incorporated DXTP03200BP5 IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DXTP03200BP5 Document number: DS32068 Rev. 3 - 2 7 of 7 www.diodes.com December 2015 © Diodes Incorporated