NCV6354 3MHz, 2A Fixed-Frequency Synchronous Buck Converter High Efficiency, Low Ripple, Adjustable Output Voltage The NCV6354, a synchronous buck converter, which is optimized to supply the different sub systems of portable applications powered by one cell Li−ion or three cell Alkaline/NiCd/NiMH batteries. The device is able to deliver up to 2 A on an external adjustable voltage. Operation with 3 MHz switching frequency allows employing small size inductor and capacitors. Input supply voltage feedforward control is employed to deal with wide input voltage range. Synchronous rectification offers improved system efficiency. The NCV6354 is in a space saving, low profile 2.0x2.0x0.75 mm WDFN−8 package. http://onsemi.com MARKING DIAGRAM 1 1 WDFN8 CASE 511BT ADMG G AD = Specific Device Code M = Date Code G = Pb−Free Package (*Note: Microdot may be in either location) Features • • • • • • • • • • • • • • 2.3 V to 5.5 V Input Voltage Range External Adjustable Voltage Up to 2 A Output Current 3 MHz Switching Frequency Synchronous Rectification Enable Input Power Good Output Soft Start Over Current Protection Active Discharge when Disabled Thermal Shutdown Protection WDFN−8, 2x2 mm, 0.5 mm Pitch Package Maximum 0.8 mm Height for Super Thin Applications These are Pb−Free Devices BLOCK DIAGRAM 1 SW 2 8 PVIN 7 AVIN 9 AGND 3 6 PG FB 4 5 EN (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 14 of this data sheet. Typical Applications • • • • • • • PGND Cellular Phones, Smart Phones, and PDAs Portable Media Players Digital Still Cameras Wireless and DSL Modems USB Powered Devices Point of Load Game and Entertainment System © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 4 1 Publication Order Number: NCV6354/D NCV6354 Cout 10uF NCV6354 1uH Vo = 0.6V to Vin Cfb R1 PGND PVIN SW AVIN AGND PG FB EN Vin = 2.3V to 5.5V Cin 10uF Rpg 1M Power Good Enable R2 Figure 1. Typical Application Circuit PIN DESCRIPTION Pin Name Type Description 1 PGND Power Ground Power Ground for power, analog blocks. Must be connected to the system ground. 2 SW Power Output Switch Power pin connects power transistors to one end of the inductor. 3 AGND Analog Ground Analog Ground analog and digital blocks. Must be connected to the system ground. 4 FB Analog Input Feedback Voltage from the buck converter output. This is the input to the error amplifier. This pin is connected to the resistor divider network between the output and AGND. 5 EN Digital Input Enable of the IC. High level at this pin enables the device. Low level at this pin disables the device. 6 PG Digital Output PG pin is for NCV6354 with Power Good option. It is open drain output. Low level at this pin indicates the device is not in power good, while high impedance at this pin indicates the device is in power good. 7 AVIN Analog Input Analog Supply. This pin is the analog and the digital supply of the device. An optional 1 mF or larger ceramic capacitor bypasses this input to the ground. This capacitor should be placed as close as possible to this input. 8 PVIN Power Input Power Supply Input. This pin is the power supply of the device. A 10 mF or larger ceramic capacitor must bypass this input to the ground. This capacitor should be placed as close a possible to this input. 9 PAD Exposed Pad Exposed Pad. Must be soldered to system ground to achieve power dissipation performances. This pin is internally unconnected http://onsemi.com 2 NCV6354 Vin PVIN 8 L SW 2 Vo 1uH Cin Cout 10uF 10uF AVIN 7 PWM / PFM Control UVLO PGND 1 R1 Enable EN 5 Rpg 1M Power Good PG 6 Logic Control & Current Limit & Thermal Shutdown Cfb FB 4 Error Amp R2 AGND 3 Reference Voltage Figure 2. Functional Block Diagram. MAXIMUM RATINGS Value Rating Input Supply Voltage to GND Switch Node to GND EN, PG to GND FB to GND Symbol Min Max Unit VPVIN , VAVIN −0.3 7.0 V VSW −0.3 7.0 V VEN, VPG −0.3 7.0 V VFB −0.3 2.5 V 2000 V Human Body Model (HBM) ESD Rating (Note 1) ESD HBM Machine Model (MM) ESD Rating (Note 1) ESD MM 200 V Latchup Current (Note 2) ILU −100 100 mA Operating Junction Temperature Range (Note 3) TJ −40 125 °C Operating Ambient Temperature Range TA −40 85 °C Storage Temperature Range TSTG −55 150 °C Thermal Resistance Junction−to−Top Case (Note 4) RqJC 12 °C/W Thermal Resistance Junction−to−Board (Note 4) RqJB 30 °C/W Thermal Resistance Junction−to−Ambient (Note 4) RqJA 62 °C/W PD 1.6 W MSL 1 − Power Dissipation (Note 5) Moisture Sensitivity Level (Note 6) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114. Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115. 2. Latchup Current per JEDEC standard: JESD78 Class II. 3. The thermal shutdown set to 160°C (typical) avoids potential irreversible damage on the device due to power dissipation. 4. The thermal resistance values are dependent of the PCB heat dissipation. Board used to drive these data was an 80 x 50mm NCP6334EVB board. It is a multilayer board with 1−once internal power and ground planes and 2−once copper traces on top and bottom of the board. If the copper trances of top and bottom are 1−once too, RqJC = 11°C/W, RqJB = 30°C/W, and RqJA = 72°C/W. 5. The maximum power dissipation (PD) is dependent on input voltage, maximum output current and external components selected. 6. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A. http://onsemi.com 3 NCV6354 ELECTRICAL CHARACTERISTICS (VIN = 3.6 V, VOUT = 1.8 V, L = 1 mH, C = 10 mF, typical values are referenced to TJ = 25°C, Min and Max values are referenced to TJ up to 125°C. unless other noted.) Characteristics Test Conditions Symbol Min Typ Max Unit (Note 9) VIN 2.3 − 5.5 V EN high, no load IQ − 5 − mA EN low ISD − − 1 mA (Note 7) VOUT 0.6 − VIN V VFB 594 600 606 mV SUPPLY VOLTAGE Input Voltage VIN Range SUPPLY CURRENT VIN Quiescent Supply Current VIN Shutdown Current OUTPUT VOLTAGE Output Voltage Range FB Voltage FB Voltage in Load Regulation VIN = 3.6 V, IOUT from 200 mA to IOUTMAX, (Note 7) − −0.5 − %/A FB Voltage in Line Regulation IOUT = 200 mA, VIN from MAX(VNOM + 0.5 V, 2.3 V) to 5.5 V (Note 7) − 0 − %/V Maximum Duty Cycle (Note 7) DMAX − 100 − % (Note 7) IOUTMAX 2.0 − − A ILIM 2.3 2.8 3.3 A VINUV− − − 2.3 V OUTPUT CURRENT Output Current Capability Output Peak Current Limit VOLTAGE MONITOR VIN UVLO Falling Threshold VIN UVLO Hysteresis VINHYS 60 − 200 mV VOUT falls down to cross the threshold (percentage of FB voltage) VPGL 87 90 92 % VOUT rises up to cross the threshold (percentage of Power Good Low Threshold (VPGL) voltage) VPGHYS 0 3 5 % Power Good High Delay in Start Up From EN rising edge to PG going high. TdPGH1 − 1.15 − ms Power Good Low Delay in Shut Down From EN falling edge to PG going low. (Note 7) TdPGL1 − 8 − ms Power Good High Delay in Regulation From VFB going higher than 95% nominal level to PG going high. Not for the first time in start up. (Note 7) TdPGH − 5 − ms Power Good Low Delay in Regulation From VFB going lower than 90% nominal level to PG going low. (Note 7) TdPGL − 8 − ms Voltage at PG pin with 5mA sink current VPG_L − − 0.3 V 3.6 V at PG pin when power good valid PG_LK − − 100 nA High−Side MOSFET ON Resistance VIN = 3.6 V (Note 8) VIN = 5 V (Note 8) RON_H − 140 130 200 − mW Low−Side MOSFET ON Resistance VIN = 3.6 V (Note 8) VIN = 5 V (Note 8) RON_L − 110 100 140 − mW FSW 2.7 3.0 3.3 MHz Power Good Low Threshold Power Good Hysteresis Power Good Pin Low Voltage Power Good Pin Leakage Current INTEGRATED MOSFETs SWITCHING FREQUENCY Operation Frequency 7. Guaranteed by design, not tested in production. 8. Maximum value applies for TJ = 85°C. 9. Operation above 5.5 V input voltage for extended periods may affect device reliability. http://onsemi.com 4 NCV6354 ELECTRICAL CHARACTERISTICS (VIN = 3.6 V, VOUT = 1.8 V, L = 1 mH, C = 10 mF, typical values are referenced to TJ = 25°C, Min and Max values are referenced to TJ up to 125°C. unless other noted.) Characteristics Test Conditions Symbol Min Typ Max Unit Time from EN to 90% of output voltage target TSS − 0.4 1 ms EN Input High Voltage VEN_H 1.1 − − V EN Input Low Voltage VEN_L − − 0.4 V EN Input Hysteresis VEN_HYS − 270 − mV Enable Input Bias Current IEN_BIAS 0.1 1 mA SOFT START Soft−Start Time CONTROL LOGIC OUTPUT ACTIVE DISCHARGE R_DIS 75 500 700 W Thermal Shutdown Threshold TSD − 160 − °C Thermal Shutdown Hysteresis TSD_HYS − 25 − °C Internal Output Discharge Resistance from SW to PGND THERMAL SHUTDOWN 7. Guaranteed by design, not tested in production. 8. Maximum value applies for TJ = 85°C. 9. Operation above 5.5 V input voltage for extended periods may affect device reliability. http://onsemi.com 5 NCV6354 1 1 ISD, VIN SHUTDOWN CURRENT (mA) ISD, VIN SHUTDOWN CURRENT (mA) TYPICAL OPERATING CHARACTERESTICS 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2.5 3 3.5 4 4.5 5 5.5 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 −25 0 25 50 75 100 125 Figure 3. Standby Current vs. Input Voltage (EN = Low, TA = 255C) Figure 4. Standby Current vs. Temperature (EN = Low, VIN = 3.6 V) 150 10 8 6 4 2 0 8 6 4 2 0 2.5 3 3.5 4 4.5 5 5.5 0 25 50 75 100 125 150 Figure 5. Quiescent Current vs. Input Voltage (EN = High, Open Loop, VOUT = 1.8V, TA = 255C) Figure 6. Quiescent Current vs. Temperature (EN = High, Open Loop, VOUT = 1.8 V, VIN = 3.6 V) 90 80 80 70 VIN = 2.7 V VIN = 3.6 V 50 VIN = 5.5 V 40 30 EFFICIENCY (%) 90 70 60 10 1500 2000 VIN = 2.7 V 30 10 1000 VIN = 3.6 V 40 20 500 VIN = 5.5 V 50 20 0 −25 VIN, INPUT VOLTAGE (V) 100 60 −50 TA, AMBIENT TEMPERATURE (°C) 100 0 −50 TA, AMBIENT TEMPERATURE (°C) Iq, VIN QUIESCENT CURRENT (mA) Iq, VIN QUIESCENT CURRENT (mA) 0.8 VIN, INPUT VOLTAGE (V) 10 EFFICIENCY (%) 0.9 0 0 500 1000 1500 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 7. Efficiency vs. Output Current and Input Voltage (VOUT = 1.05 V, TA = 255C) Figure 8. Efficiency vs. Output Current and Input Voltage (VOUT = 1.8 V, TA = 255C) http://onsemi.com 6 2000 NCV6354 TYPICAL OPERATING CHARACTERESTICS 100 100 90 90 80 VIN = 5.5 V 70 EFFICIENCY (%) EFFICIENCY (%) 80 VIN = 3.6 V 60 50 40 30 50 40 30 20 10 0 500 1000 1500 2000 0 0 500 1000 1500 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 9. Efficiency vs. Output Current and Input Voltage (VOUT = 3.3 V, TA = 255C) Figure 10. Efficiency vs. Output Current and Input Voltage (VOUT = 4 V, TA = 255C) 2000 VOUT, OUTPUT VOLTAGE (V) 1.82 1.81 VIN = 5.5 V 1.8 VIN = 3.6 V VIN = 2.7 V 1.79 1.78 VIN = 4.5 V 60 10 1.82 VOUT, OUTPUT VOLTAGE (V) 70 20 0 VIN = 5.5 V 0 200 400 600 800 1000 1200 1400 1600 1800 2000 1.81 TA = 85°C 1.8 TA = 25°C TA = −40°C 1.79 1.78 0 200 400 600 800 1000 1200 1400 1600 1800 2000 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 11. Load Regulation vs. Output Current and Input Voltage (VOUT = 1.8 V, TA = 255C) Figure 12. Load Regulation vs. Output Current and Temperature (VIN = 3.6 V, VOUT = 1.8 V) VOUT 5 mV/Div −70 mV 3 mV VOUT 100 mV/Div 1500 mA 100 mV IOUT 1 A/Div SW 2 V/Div 500 mA SW 2 V/Div Time: 20 ms/Div Time: 200 ns/Div Figure 13. Output Ripple Voltage (VIN = 3.6 V, VOUT = 1.8 V, IOUT = 1 A, L=1.0 mH, COUT = 10 mF) Figure 14. Load Transient Response (VIN = 3.6 V, VOUT = 1.8 V, IOUT = 500 mA to 1500 mA, L = 1.0 mH, COUT = 10 mF) http://onsemi.com 7 NCV6354 TYPICAL OPERATING CHARACTERESTICS EN 5 V/Div EN 5 V/Div VOUT 1.0 V/Div VOUT 1.0 V/Div IIN 100 mA/Div SW 5 V/Div PG 5 V/Div 80 mA Time: 100 ms/Div SW 2 V/Div Figure 15. Power Up Sequence and Inrush Current in Input (VIN = 3.6 V, VOUT = 1.8 V, IOUT = 0 A, L = 1.0 mH, COUT = 10 mF) Time: 200 ms/Div Figure 16. Power Up Sequence and Power Good (VIN = 3.6 V, VOUT = 1.8 V, IOUT = 0 A, L = 1.0 mH, COUT = 10 mF) EN 5 V/Div VOUT 1.0 V/Div PG 5 V/Div SW 2 V/Div Time: 1 ms/Div Figure 17. Power Down Sequence and Active Output Discharge (VIN = 3.6 V, VOUT = 1.8 V, IOUT = 0 A, L = 1.0 mH, COUT = 10 mF) http://onsemi.com 8 NCV6354 DETAILED DESCRIPTION General device and makes the device in shutdown mode. There is an internal filter with 5 ms time constant. The EN pin is pulled down by an internal 10 nA sink current source. In most of applications, the EN signal can be programmed independently to VIN power sequence. The NCV6354, a synchronous buck converter, which is optimized to supply the different sub systems of portable applications powered by one cell Li−ion or three cell Alkaline/NiCd/NiMH batteries. The device is able to deliver up to 2 A on an external adjustable voltage. Operation with 3 MHz switching frequency allows employing small size inductor and capacitors. Input supply voltage feedforward control is employed to deal with wide input voltage range. Synchronous rectification offers improved system efficiency. Power Good Output For NCV6354 with power good output, the device monitors the output voltage and provides a power good output signal at the PG pin. This pin is an open−drain output pin. To indicate the output of the converter is established, a power good signal is available. The power good signal is low when EN is high but the output voltage has not been established. Once the output voltage of the converter drops out below 90% of its regulation during operation, the power good signal is pulled low and indicates a power failure. A 5% hysteresis is required on power good comparator before signal going high again. PWM Operation The inductor current is continuous and the device operates in fixed switching frequency, which has a typical value of 3 MHz. The output voltage is regulated by on−time pulse width modulation of the internal P−MOSFET. The internal N−MOSFET operates as synchronous rectifier and its turn−on signal is complimentary to that of the P−MOSFET. Soft Start Undervoltage Lockout The input voltage VIN must reach or exceed 2.4 V (typical) before the NCV6354 enables the converter output to begin the start up sequence. The UVLO threshold hysteresis is typically 100 mV. A soft start limits inrush current when the converter is enabled. After a minimum 300 ms delay time following the enable signal, the output voltage starts to ramp up in 100 ms (for external adjustable voltage devices) or with a typical 10 V/ms slew rate (for fixed voltage devices). Enable Active Output Discharge The NCV6354 has an enable logic input pin EN. A high level (above 1.1 V) on this pin enables the device to active mode. A low level (below 0.4 V) on this pin disables the An output discharge operation is active in when EN is low. A discharge resistor (500 W typical) is enabled in this condition to discharge the output capacitor through SW pin. 1.1V EN 0.4V 100us 95% 90% 300us Vout 1.15ms 8us 5us 8us PG 8us Active Discharge Figure 18. Power Good and Active Discharge Timing Diagram Cycle−by−Cycle Current Limitation current limit threshold, the P−MOSFET will be turned off cycle−by−cycle. The maximum output current can be calculated by The NCV6354 protects the device from over current with a fixed cycle−by−cycle current limitation. The typical peak current limit ILMT is 2.8 A. If inductor current exceeds the http://onsemi.com 9 NCV6354 I MAX + I LMT * V OUT @ ǒV IN * V OUTǓ 2 @ V IN @ f SW @ L Thermal Shutdown The NCV6354 has a thermal shutdown protection to protect the device from overheating when the die temperature exceeds 160°C. Once the thermal protection is triggered, the fault state can be ended by re−applying VIN and/or EN when the temperature drops down below 125°C. (eq. 1) where VIN is input supply voltage, VOUT is output voltage, L is inductance of the filter inductor, and fSW is 3 MHz normal switching frequency. APPLICATION INFORMATION Output Filter Design Considerations 50% of the maximum output current IOUT_MAX for a trade−off between transient response and output ripple. The inductance corresponding to the given current ripple is The output filter introduces a double pole in the system at a frequency of f LC + 1 2 @ p @ ǸL @ C (eq. 2) L+ The internal compensation network design of the NCV6354 is optimized for the typical output filter comprised of a 1.0 mH inductor and a 10 mF ceramic output capacitor, which has a double pole frequency at about 50 kHz. Other possible output filter combinations may have a double pole around 50 kHz to have optimum operation with the typical feedback network. Normal selection range of the inductor is from 0.47 mH to 4.7 mH, and normal selection range of the output capacitor is from 4.7 mF to 22 mF. ǒVIN * VOUTǓ @ VOUT V IN @ f SW @ I L_PP (eq. 3) The selected inductor must have high enough saturation current rating to be higher than the maximum peak current that is I L_MAX + I OUT_MAX ) I L_PP 2 (eq. 4) The inductor also needs to have high enough current rating based on temperature rise concern. Low DCR is good for efficiency improvement and temperature rise reduction. Table 1 shows some recommended inductors for high power applications and Table 2 shows some recommended inductors for low power applications. Inductor Selection The inductance of the inductor is determined by given peak−to−peak ripple current IL_PP of approximately 20% to Table 1. LIST OF RECOMMENDED INDUCTORS FOR HIGH POWER APPLICATIONS Manufacturer Part Number Case Size (mm) L (mH) Rated Current (mA) (Inductance Drop) Structure MURATA LQH44PN2R2MP0 4.0 x 4.0 x 1.8 2.2 2500 (−30%) Wire Wound MURATA LQH44PN1R0NP0 4.0 x 4.0 x 1.8 1.0 2950 (−30%) Wire Wound MURATA LQH32PNR47NNP0 3.0 x 2.5 x 1.7 0.47 3400 (−30%) Wire Wound Table 2. LIST OF RECOMMENDED INDUCTORS FOR LOW POWER APPLICATIONS Manufacturer Part Number Case Size (mm) L (mH) Rated Current (mA) (Inductance Drop) Structure MURATA LQH44PN2R2MJ0 4.0 x 4.0 x 1.1 2.2 1320 (−30%) Wire Wound MURATA LQH44PN1R0NJ0 4.0 x 4.0 x 1.1 1.0 2000 (−30%) Wire Wound TDK VLS201612ET−2R2 2.0 x 1.6 x 1.2 2.2 1150 (−30%) Wire Wound TDK VLS201612ET−1R0 2.0 x 1.6 x 1.2 1.0 1650 (−30%) Wire Wound Output Capacitor Selection where VOUT_PP(C) is a ripple component by an equivalent total capacitance of the output capacitors, VOUT_PP(ESR) is a ripple component by an equivalent ESR of the output capacitors, and VOUT_PP(ESL) is a ripple component by an equivalent ESL of the output capacitors. In PWM operation mode, the three ripple components can be obtained by The output capacitor selection is determined by output voltage ripple and load transient response requirement. For a given peak−to−peak ripple current IL_PP in the inductor of the output filter, the output voltage ripple across the output capacitor is the sum of three components as below. V OUT_PP + V OUT_PP(C) ) V OUT_PP(ESR) ) V OUT_PP(ESL) (eq. 5) http://onsemi.com 10 NCV6354 V OUT_PP(C) + I L_PP 8 @ C @ f SW V OUT_PP(ESR) + I L_PP @ ESR V OUT_PP(ESL) + ESL ESL ) L @ V IN ripple and get better decoupling in the input power supply rail, ceramic capacitor is recommended due to low ESR and ESL. The minimum input capacitance regarding to the input ripple voltage VIN_PP is I OUT_MAX @ ǒD * D 2Ǔ (eq. 6) (eq. 7) C IN_MIN + (eq. 8) and the peak−to−peak ripple current is I L_PP + ǒV IN * VOUTǓ @ VOUT V IN @ f SW @ L I L_PP 8 @ V OUT_PP @ f SW (eq. 11) where (eq. 9) D+ V OUT V IN (eq. 12) In addition, the input capacitor needs to be able to absorb the input current, which has a RMS value of In applications with all ceramic output capacitors, the main ripple component of the output ripple is VOUT_PP(C). So that the minimum output capacitance can be calculated regarding to a given output ripple requirement VOUT_PP in PWM operation mode. C MIN + V IN_PP @ f SW I IN_RMS + I OUT_MAX @ ǸD * D 2 (eq. 13) The input capacitor also needs to be sufficient to protect the device from over voltage spike, and normally at least a 4.7 mF capacitor is required. The input capacitor should be located as close as possible to the IC on PCB. (eq. 10) Input Capacitor Selection One of the input capacitor selection guides is the input voltage ripple requirement. To minimize the input voltage Table 3. LIST OF RECOMMENDED INPUT CAPACITORS AND OUTPUT CAPACITORS Manufacturer MURATA TDK MURATA TDK MURATA TDK MURATA Case Size Height Max (mm) C (mF) Rated Voltage (V) Structure GRM21BR60J226ME39, X5R 0805 1.4 22 6.3 MLCC C2012X5R0J226M, X5R 0805 1.25 22 6.3 MLCC GRM21BR61A106KE19, X5R 0805 1.35 10 10 MLCC C2012X5R1A106M, X5R 0805 1.25 10 10 MLCC GRM188R60J106ME47, X5R 0603 0.9 10 6.3 MLCC C1608X5R0J106M, X5R 0603 0.8 10 6.3 MLCC GRM188R60J475KE19, X5R 0603 0.87 4.7 6.3 MLCC Part Number Design of Feedback Network 220 kW for applications with the typical output filter. R2 is the resistance from FB to AGND, which is used to program the output voltage according to Equation 14 once the value of R1 has been selected. An capacitor Cfb needs to be employed between the VOUT and FB in order to provide feedforward function to achieve optimum transient response. Normal value range of Cfb is from 0 to 100pF, and a typical value is 15 pF for applications with the typical output filter and R1 = 220 kW. Table 4 provides reference values of R1 and Cfb in case of different output filter combinations. The final design may need to be fine tuned regarding to application specifications. For NCV6354 devices with an external adjustable output voltage, the output voltage is programmed by an external resistor divider connected from VOUT to FB and then to AGND, as shown in the typical application schematic Figure 1a. The programmed output voltage is ǒ V OUT + V FB @ 1 ) Ǔ R1 R2 (eq. 14) where VFB is equal to the internal reference voltage 0.6 V, R1 is the resistance from VOUT to FB, which has a normal value range from 50 kW to 1 MW and a typical value of http://onsemi.com 11 NCV6354 Table 4. REFERENCE VALUES OF FEEDBACK NETWORKS (R1 AND Cfb) FOR OUTPUT FILTER CONBINATIONS (L AND C) R1 (kW) L (mH) Cfb (pF) 4.7 C (mF) 10 22 0.47 0.68 1 2.2 3.3 4.7 220 220 220 220 330 330 3 5 8 15 15 22 220 220 220 220 330 330 8 10 15 27 27 39 220 220 220 220 330 330 15 22 27 39 47 56 http://onsemi.com 12 NCV6354 LAYOUT CONSIDERATIONS Electrical Layout Considerations Good electrical layout is a key to make sure proper operation, high efficiency, and noise reduction. Electrical layout guidelines are: • Use wide and short traces for power paths (such as PVIN, VOUT, SW, and PGND) to reduce parasitic inductance and high−frequency loop area. It is also good for efficiency improvement. • The device should be well decoupled by input capacitor and input loop area should be as small as possible to reduce parasitic inductance, input voltage spike, and noise emission. • SW node should be a large copper pour, but compact because it is also a noise source. • It would be good to have separated ground planes for PGND and AGND and connect the two planes at one point. • Directly connect AGND pin to the exposed pad and then connect to AGND ground plane through vias. Try best to avoid overlap of input ground loop and output ground loop to prevent noise impact on output regulation. Arrange a “quiet” path for output voltage sense and feedback network, and make it surrounded by a ground plane. Thermal Layout Considerations Good thermal layout helps high power dissipation from a small package with reduced temperature rise. Thermal layout guidelines are: • The exposed pad must be well soldered on the board. • A four or more layers PCB board with solid ground planes is preferred for better heat dissipation. • More free vias are welcome to be around IC and/or underneath the exposed pad to connect the inner ground layers to reduce thermal impedance. Use large area copper especially in top layer to help thermal conduction and radiation. • • Do not put the inductor to be too close to the IC, thus the heat sources are distributed. GND VIN P P P P ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÏÏÏ ÏÏÏ Cin P P PGND 1 SW 2 AGND F FB ÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏ A 3 4 A ÏÏÏ ÏÏÏ ÏÏÏ ÎÎÎ 8 PVIN 7 AVIN 6 MODE/PG 5 EN P Cout L A P P O P P P P P P Cfb F R1 R2 VOUT GND Figure 19. Recommended PCB Layout for Application Boards http://onsemi.com 13 O A NCV6354 ORDERING INFORMATION Device NCV6354BMTAATBG Marking Package Shipping† AD WDFN8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 14 NCV6354 PACKAGE DIMENSIONS WDFN8 2x2, 0.5P CASE 511BT ISSUE O PIN ONE REFERENCE 2X 0.10 C 2X B A D ÇÇ ÇÇ ÇÇ 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L1 E DETAIL A DIM A A1 A3 b D D2 E E2 e K L L1 TOP VIEW MOLD CMPD DETAIL B 0.10 C 0.08 C NOTE 4 A3 A1 A1 SIDE VIEW C D2 DETAIL A 1 8X 4 ÇÇ ÉÉ EXPOSED Cu A SEATING PLANE DETAIL B A3 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.50 1.70 2.00 BSC 0.80 1.00 0.50 BSC 0.25 REF 0.20 0.40 −−− 0.15 RECOMMENDED SOLDERING FOOTPRINT* L 8X 1.70 PACKAGE OUTLINE 0.50 E2 K 8 5 e 8X BOTTOM VIEW 0.05 C 2.30 1.00 b 0.10 C A B NOTE 3 1 0.50 PITCH 8X 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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