NCV4275C 450 mA Low-Drop Voltage Regulator with Reset The NCV4275C is an integrated low dropout regulator designed for use in harsh automotive environments. It includes wide operating temperature and input voltage ranges. The output is regulated at 5.0 V or 3.3 V and is rated to 450 mA of output current. It also provides a number of features, including overcurrent protection, overtemperature protection and a programmable microprocessor reset. The NCV4275C is available in the DPAK and D2PAK surface mount packages. The output is stable over a wide output capacitance and ESR range. The NCV4275C is pin for pin compatible with NCV4275A. Features • • • • • • • 5.0 V or 3.3 V ±2% Output Voltage Options 450 mA Output Current Very Low Current Consumption Active Reset Output Reset Low Down to VQ = 1.0 V 500 mV (max) Dropout Voltage Fault Protection ♦ +45 V Peak Transient Voltage ♦ −42 V Reverse Voltage ♦ Short Circuit Protection ♦ Thermal Overload Protection AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices • • http://onsemi.com MARKING DIAGRAMS 1 5 DPAK 5−PIN DT SUFFIX CASE 175AA 1 5 4275CxG ALYWW 1 NC V4275Cx AWLYWWG D2PAK 5−PIN DS SUFFIX CASE 936A x A WL, L Y WW G Applications • Auto Body Electronics I 1 = 5 (5.0 V Output) or 3 (3.3 V Output) = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package Q Error Amplifier Bandgap Reference Current Limit and Saturation Sense ORDERING INFORMATION See detailed ordering and shipping information on page 13 of sheet. + − Thermal Shutdown Reset Generator D GND RO Figure 1. Block Diagram © Semiconductor Components Industries, LLC, 2014 January, 2014 − Rev. 0 1 Publication Order Number: NCV4275C/D NCV4275C PIN FUNCTION DESCRIPTION Pin No. DPAK−5 D2PAK−5 Symbol Description 1 I 2 RO Input; Battery Supply Input Voltage. Bypass to ground with a ceramic capacitor. 3, TAB GND 4 D Reset Delay; timing capacitor to GND for Reset Delay function. 5 Q Output; ±2.0%, 450 mA output. Bypass with 22 mF capacitor, ESR < 4.5 W (5.0 V Version), 3.5 W (3.3 V Version). Reset Output; Open Collector Active Reset (accurate when I > 1.0 V). Ground; Pin 3 internally connected to tab. MAXIMUM RATINGS Symbol Min Max Unit Input Voltage Rating VI −42 45 V Input Peak Transient Voltage VI − 45 V Output Voltage VQ −1.0 16 V Reset Output Voltage VRO −0.3 25 V Reset Output Current IRO −5.0 5.0 mA Reset Delay Voltage VD −0.3 7.0 V Reset Delay Current ID −2.0 2.0 mA ESDHBM ESDMM ESDCDM 4.0 200 1000 − − − kV V V Junction Temperature TJ −40 150 °C Storage Temperature Tstg −55 150 °C ESD Susceptibility (Note 1) − Human Body Model − Machine Model − Charge Device Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device incorporates ESD protection and is tested by the followign methods: ESD Human Body Model tested per AEC−Q100−002, ESD Machine Model tested per AEC−Q100−003, ESD Charged Device Model tested per AEC−Q100−011, Latch−up tested per AEC−Q100−004. OPERATING RANGE Rating Input Voltage Operating Range, 5.0 V Output Symbol Min Max Unit VI 5.5 42 V Input Voltage Operating Range, 3.3 V Output VI 4.4 42 V Junction Temperature TJ −40 150 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. LEAD TEMPERATURE SOLDERING REFLOW AND MSL (Note 2) Rating Symbol Min Max Unit Lead Free, 60 sec−150 sec above 217°C TSLD − 265 Peak °C Moisture Sensitivity Level MSL http://onsemi.com 2 1 NCV4275C THERMAL CHARACTERISTICS Characteristic Test Conditions (Typical Value) Unit DPAK 5−PIN PACKAGE Min Pad Board (Note 3) 1 in Pad Board (Note 4) Junction−to−Tab (RqJT) 5.1 5.5 °C/W Junction−to−Ambient (RqJA) 82.4 58.1 °C/W 0.4 sq. in. Spreader Board (Note 5) 1.2 sq. in. Spreader Board (Note 6) D2PAK 5−PIN PACKAGE Junction−to−Tab (RqJT) 4.5 4.8 °C/W Junction−to−Ambient (RqJA) 66.0 49.0 °C/W 2. 3. 4. 5. 6. PRR IPC / JEDEC J−STD−020C 1 oz. copper, 0.26 inch2 (168 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 1.14 inch2 (736 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 0.373 inch2 (241 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 1.222 inch2 (788 mm2) copper area, 0.062″ thick FR4. http://onsemi.com 3 NCV4275C ELECTRICAL CHARACTERISTICS (VI = 13.5 V; −40°C < TJ < 150°C; unless otherwise noted.) Characteristic Symbol Test Conditions Min Typ Max 4.9 3.23 (2%) 5.0 3.3 5.1 3.37 (2%) 4.9 3.23 (2%) 5.0 3.3 5.1 3.37 (2%) Unit Output Output Voltage VQ 100 mA v IQ v 400 mA 6.0 V v VI v 28 V (5.0 V Version) 4.4 V v VI v 28 V (3.3 V version) Output Voltage VQ 100 mA v IQ v 200 mA 6.0 V v VI v 40 V (5.0 V Version) 4.4 V v VI v 40 V (3.3 V version) Output Current Limitation IQ VQ = 0.9 x VQ,typ 450 650 − mA Quiescent Current Iq = II − IQ Iq IQ = 1.0 mA, TJ = 25°C − 135 150 mA IQ = 1.0 mA − 150 200 mA IQ = 250 mA − 10 15 mA IQ = 400 mA − 23 35 mA IQ = 300 mA Vdr = VI − VQ − 250 500 mV Dropout Voltage (Note 7) Vdr V V Load Regulation DVQ IQ = 5.0 mA to 400 mA −30 15 30 mV Line Regulation DVQ DVI = 8.0 V to 32 V, IQ = 5.0 mA −15 5.0 15 mV Power Supply Ripple Rejection PSRR fr = 100 Hz, Vr = 0.5 Vpp − 60 − dB Temperature Output Voltage Drift dVQ/dT −− − 0.5 − mV/K Reset Timing D and Output RO Reset Switching Threshold 5.0 V Version 3.3 V Version VQ,rt Vout decreasing Vin > 5.5 V Vin > 4.4 V 90 90 93 93 96 96 % Vout Reset Output Low Voltage VROL Rext ≥ 5.0 kW, VQ ≥ 1.0 V − 0.2 0.4 V Reset Output Leakage Current IROH VROH = 5.0 V − 0 10 mA Reset Charging Current ID,C VD = 1.0 V 3.0 5.5 9.0 mA Upper Timing Threshold VDU −− 1.5 1.8 2.2 V Lower Timing Threshold VDL −− 0.2 0.4 0.7 V Reset Delay Time trd CD = 47 nF 10 16 22 ms Reset Reaction Time trr CD = 47 nF − 1.5 4.0 ms 150 − 210 °C Thermal Shutdown Shutdown Temperature (Note 8) TSD −− Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Only for 5 V Version. Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V. 8. Guaranteed by design, not tested in production. http://onsemi.com 4 NCV4275C TYPICAL PERFORMANCE CHARACTERISTICS 5.0 V Version 10 Stable ESR Region 1 Stable ESR Region 1 CQ = 22 mF ESR (W) CQ = 22 mF ESR (W) 3.3 V Version 10 0.1 0.1 VQ(nom) = 5.0 V 0.01 0 100 200 300 VQ(nom) = 3.3 V 0.01 400 0 100 IQ, OUTPUT CURRENT (mA) 200 300 400 IQ, OUTPUT CURRENT (mA) Figure 2. Output Stability with Output Capacitor ESR Figure 3. Output Stability with Output Capacitor ESR 100 100 10 ESR (W) ESR (W) 10 Stable ESR Region 1 CQ = 1 mF Stable ESR Region 1 CQ = 1 mF 0.1 VQ(nom) = 5.0 V 0.01 0 100 VQ(nom) = 3.3 V 200 300 0.1 400 0 100 IQ, OUTPUT CURRENT (mA) VQ, OUTPUT VOLAGE (V) 5.05 5.03 5.00 4.98 4.95 4.93 3.36 VIN = 13.5 V, IOUT = 200 mA 3.34 3.32 3.3 3.28 VQ(nom) = 3.3 V VQ(nom) = 5.0 V 4.90 −40 −20 0 20 40 60 80 400 Figure 5. Output Stability with Output Capacitor ESR VQ, OUTPUT VOLAGE (V) VIN = 13.5 V, IOUT = 200 mA 5.08 300 IQ, OUTPUT CURRENT (mA) Figure 4. Output Stability with Output Capacitor ESR 5.10 200 3.26 −40 −20 100 120 140 160 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Output Voltage VQ vs. Temperature TJ Figure 7. Output Voltage VQ vs. Temperature TJ http://onsemi.com 5 NCV4275C TYPICAL PERFORMANCE CHARACTERISTICS 5.0 V Version 6 VQ, OUTPUT VOLTAGE (V) IOUT = 200 mA TJ = 25°C 5 VQ, OUTPUT VOLTAGE (V) 4.0 4 3 2 1 0 2 4 6 8 IOUT = 200 mA TJ = 25°C 3.0 2.5 2.0 1.5 1.0 0.5 VQ(nom) = 5.0 V VQ(nom) = 3.3 V 0.0 0 10 2 8 10 VIN, INPUT VOLTAGE (V) Figure 9. Output Voltage VQ vs. Input Voltage VIN VIN = 13.5 V 650 600 550 VQ(nom) = 5.0 V 500 −40 −20 0 20 40 60 80 100 120 140 160 700 VIN = 13.5 V 650 600 550 VQ(nom) = 3.3 V 500 −40 −20 TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 10. Output Current IQ vs. Temperature TJ Figure 11. Output Current IQ vs. Temperature TJ 700 700 TJ = 25°C 600 IILIM, ISC, CURRENT LIMIT (mA) ILIM, ISC, CURRENT LIMIT (mA) 6 VIN, INPUT VOLTAGE (V) 700 TJ = 125°C 500 400 300 200 100 0 4 Figure 8. Output Voltage VQ vs. Input Voltage VIN IQ, OUTPUT CURRENT LIMITATION (A) IQ, OUTPUT CURRENT LIMITATION (A) 0 3.5 3.3 V Version VQ(nom) = 5.0 V 0 5 10 15 20 25 30 35 TJ = 125°C 500 400 300 200 100 0 0 40 TJ = 25°C 600 VIN, INPUT VOLTAGE (V) VQ(nom) = 3.3 V 5 10 15 20 25 30 35 VI, INPUT VOLTAGE (V) Figure 12. Output Current IQ vs. Input Voltage VIN Figure 13. Output Current IQ vs. Input Voltage VIN http://onsemi.com 6 40 NCV4275C VIN = 13.5 V, TJ = 25°C 2.5 2 1.5 1 0.5 VQ(nom) = 5.0 V 0 Iq, CURRENT CONSUMPTION (mA) Iq, CURRENT CONSUMPTION (mA) 3 0 20 40 60 80 100 120 1.5 1 0.5 VQ(nom) = 3.3 V 0 20 40 60 80 100 Figure 15. Current Consumption Iq vs. Output Current IQ 120 30 15 10 5 VQ(nom) = 5.0 V 0 50 100 150 200 250 300 350 400 450 VIN = 13.5 V, TJ = 25°C 25 20 15 10 5 0 VQ(nom) = 3.3 V IQ, OUTPUT CURRENT (mA) 100 150 200 250 300 350 IQ, OUTPUT CURRENT (mA) Figure 16. Current Consumption Iq vs. Output Current IQ Figure 17. Current Consumption Iq vs. Output Current IQ 10 0 50 2.2 VIN = 13.5 V, VD = 1 V 7 6 5 4 3 2 1 0 −40 −20 0 20 40 60 80 450 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −40 −20 100 120 140 160 400 VIN = 13.5 V 2 IDC, CHARGE CURRENT (mA) IDC, CHARGE CURRENT (mA) 2 Figure 14. Current Consumption Iq vs. Output Current IQ 20 8 2.5 IQ, OUTPUT CURRENT (mA) VIN = 13.5 V, TJ = 25°C 25 9 VIN = 13.5 V, TJ = 25°C IQ, OUTPUT CURRENT (mA) 30 0 3 0 Iq, CURRENT CONSUMPTION (mA) Iq, CURRENT CONSUMPTION (mA) TYPICAL PERFORMANCE CHARACTERISTICS 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 18. Charge Current ID,C vs. Temperature TJ Figure 19. Delay Switching Threshold VDU, VDL vs. Temperature TJ http://onsemi.com 7 NCV4275C TYPICAL PERFORMANCE CHARACTERISTICS Vdr, DROPOUT VOLTAGE (mV) 800 700 600 500 TJ = 125°C 400 300 TJ = 25°C 200 100 0 VQ(nom) = 5.0 V 0 100 200 300 400 500 600 IQ, OUTPUT CURRENT (mA) Figure 20. Drop Voltage Vdr vs. Output Current IQ http://onsemi.com 8 NCV4275C APPLICATION INFORMATION VI II CI1 1000 mF I CI2 100 nF ID CD 47 nF 1 5 IQ Q CQ 22 mF NCV4275C D 4 2 3 RO IRO VQ Rext 5.0 k VRO GND Iq Figure 21. Test Circuit Circuit Description The NCV4275C is an integrated low dropout regulator that provides 5.0 V or 3.3 V, 450 mA protected output and a signal for power on reset. The regulation is provided by a PNP pass transistor controlled by an error amplifier with a bandgap reference, which gives it the lowest possible drop out voltage and best possible temperature stability. The output current capability is 450 mA, and the base drive quiescent current is controlled to prevent over saturation when the input voltage is low or when the output is overloaded. The regulator is protected by both current limit and thermal shutdown. Thermal shutdown occurs above 150°C to protect the IC during overloads and extreme ambient temperatures. The delay time for the reset output is adjustable by selection of the timing capacitor. See Figure 21, Test Circuit, for circuit element nomenclature illustration. in Figures 2 to 5. Minimum ESR for CQ = 22 mF is native ESR of ceramic capacitors. The aluminum electrolytic capacitor is the least expensive solution, but, if the circuit operates at low temperatures (−25°C to −40°C), both the capacitance and ESR of the capacitor will vary considerably. The capacitor manufacturer’s data sheet usually provides this information. The value for the output capacitor CQ shown in Figure 21, Test Circuit, should work for most applications; however, it is not necessarily the optimized solution. Stability is guaranteed for CQ ≥ 22 mF and an ESR ≤ 4.5 W (5.0 V Version), 3.5 W (3.3 V Version). ESR characteristics were measured with ceramic capacitors and additional resistors to emulate ESR. Murata ceramic capacitors were used, GRM32ER71A226ME20 (22 mF, 10 V, X7R, 1210), GRM31MR71E105KA01 (1 mF, 25 V, X7R, 1206). Reset Output The reset output is used as the power on indicator to the microcontroller. This signal indicates when the output voltage is suitable for reliable operation of the controller. It pulls low when the output is not considered to be ready. RO is pulled up to VQ by an external resistor, typically 5.0 kW in value. The input and output conditions that control the Reset Output and the relative timing are illustrated in Figure 22, Reset Timing. Output voltage regulation must be maintained for the delay time before the reset output signals a valid condition. The delay for the reset output is defined as the amount of time it takes the timing capacitor on the delay pin to charge from a residual voltage of 0.0 V to the upper timing threshold voltage VDU. The charging current for this is ID,C and D pin voltage in steady state is typically 2.4 V. By using typical IC parameters with a 47 nF capacitor on the D pin, the following time delay for 5.0 V regulator is derived: tRD = CDVDU / ID,C tRD = 47 nF (1.8 V) / 5.5 mA = 15.4 ms Regulator The error amplifier compares the reference voltage to a sample of the output voltage (VQ) and drives the base of a PNP series pass transistor by a buffer. The reference is a bandgap design to give it a temperature−stable output. Saturation control of the PNP is a function of the load current and input voltage. Over saturation of the output power device is prevented, and quiescent current in the ground pin is minimized. Regulator Stability Considerations The input capacitors (CI1 and CI2) are necessary to stabilize the input impedance to avoid voltage line influences. Using a resistor of approximately 1.0 W in series with CI2 can stop potential oscillations caused by stray inductance and capacitance. The output capacitor helps determine three main characteristics of a linear regulator: startup delay, load transient response and loop stability. The capacitor value and type should be based on cost, availability, size and temperature constraints. A tantalum, aluminum or ceramic capacitors can be used. The range of stability versus capacitance, load current and capacitive ESR is illustrated Other time delays can be obtained by changing the capacitor value. http://onsemi.com 9 NCV4275C VI t < Reset Reaction Time VQ VQ,rt t Reset Charge Current dVD + CD dt VD Upper Timing Threshold VDU Lower Timing Threshold VDL t Reset Delay Time Reset Reaction Time VRO t Power−on−Reset Thermal Shutdown Voltage Dip at Input Undervoltage Secondary Spike Figure 22. Reset Timing http://onsemi.com 10 Overload at Output NCV4275C Calculating Power Dissipation in a Single Output Linear Regulator The maximum power dissipation for a single output regulator (Figure 23) is: PD(max) + [VI(max) * VQ(min)] IQ(max) IQ II SMART REGULATOR® VI } Control Features (1) ) VI(max)Iq Iq where VI(max) is the maximum input voltage, is the minimum output VQ(min) voltage, IQ(max) is the maximum output current for the application, Iq is the quiescent current the regulator consumes at IQ(max). Once the value of PD(max) is known, the maximum permissible value of RqJA can be calculated: T RqJA + 150° C * A PD Figure 23. Single Output Regulator with Key Performance Parameters Labeled Heatsinks A heatsink effectively increases the surface area of the package to improve the flow of heat away from the IC and into the surrounding air. Each material in the heat flow path between the IC and the outside environment will have a thermal resistance. Like series electrical resistances, these resistances are summed to determine the value of RqJA: RqJA + RqJC ) RqCS ) RqSA (2) 140 120 100 DPAK 1 oz 60 40 DPAK 2 oz 0 100 200 300 RqJC is the junction−to−case thermal resistance, RqCS is the case−to−heatsink thermal resistance, RqSA is the heatsink−to−ambient thermal resistance. RqJC appears in the package section of the data sheet. Like RqJA, it too is a function of package type. RqCS and RqSA are functions of the package type, heatsink and the interface between them. These values appear in heatsink data sheets of heatsink manufacturers. Thermal, mounting, and heatsinking considerations are discussed in the ON Semiconductor application note AN1040/D. RqJA, THERMAL RESISTANCE (C°/W) RqJA, THERMAL RESISTANCE (C°/W) 160 400 500 600 COPPER AREA SPREADER AREA 700 (3) where The value of RqJA can then be compared with those in the package section of the data sheet. Those packages with RqJA’s less than the calculated value in Equation 2 will keep the die temperature below 150°C. In some cases, none of the packages will be sufficient to dissipate the heat generated by the IC, and an external heatsink will be required. 80 VQ 800 140 120 100 80 D2PAK 1 oz 60 40 D2PAK 2 oz 0 (mm2) 100 200 300 400 500 600 COPPER AREA SPREADER AREA Figure 24. qJA vs. Copper Spreader Area, DPAK 5−Lead 700 (mm2) Figure 25. qJA vs. Copper Spreader Area, D2PAK 5−Lead http://onsemi.com 11 800 NCV4275C 100 Cu Area 167 mm2 Cu Area 736 mm2 R(t) C°/W 10 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 26. Single−Pulse Heating Curves, DPAK 5−Lead 100 Cu Area 167 mm2 Cu Area 736 mm2 R(t) C°/W 10 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 TIME (sec) Figure 27. Single−Pulse Heating Curves, D2PAK 5−Lead http://onsemi.com 12 10 100 1000 NCV4275C 100 RqJA 736 mm2 C°/W 50% Duty Cycle 10 1.0 20% 10% 5% 2% 1% 0.1 Non−normalized Response 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE WIDTH (sec) Figure 28. Duty Cycle for 1” Spreader Boards, DPAK 5−Lead 100 RqJA 788 mm2 C°/W 50% Duty Cycle 10 1.0 20% 10% 5% 2% 1% 0.1 Non−normalized Response 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE WIDTH (sec) Figure 29. Duty Cycle for 1” Spreader Boards, D2PAK 5−Lead ORDERING INFORMATION Device Output Voltage NCV4275CDS50R4G NCV4275CDT50RKG 5.0 V NCV4275CDS33R4G NCV4275CDT33RKG 3.3 V Package Shipping† D2PAK (Pb−Free) 800 / Tape & Reel DPAK (Pb−Free) 2500 / Tape & Reel D2PAK (Pb−Free) 800 / Tape & Reel DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 13 NCV4275C PACKAGE DIMENSIONS DPAK 5, CENTER LEAD CROP DT SUFFIX CASE 175AA ISSUE A −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R R1 Z A S DIM A B C D E F G H J K L R R1 S U V Z 1 2 3 4 5 U K F J L H D G 5 PL 0.13 (0.005) M T SOLDERING FOOTPRINT* 6.4 0.252 2.2 0.086 0.34 5.36 0.013 0.217 5.8 0.228 10.6 0.417 0.8 0.031 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 14 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.020 0.028 0.018 0.023 0.024 0.032 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.045 BSC 0.170 0.190 0.185 0.210 0.025 0.040 0.020 −−− 0.035 0.050 0.155 0.170 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.51 0.71 0.46 0.58 0.61 0.81 4.56 BSC 0.87 1.01 0.46 0.58 2.60 2.89 1.14 BSC 4.32 4.83 4.70 5.33 0.63 1.01 0.51 −−− 0.89 1.27 3.93 4.32 NCV4275C PACKAGE DIMENSIONS D2PAK, 5 LEAD DS SUFFIX CASE 936A−02 ISSUE C −T− OPTIONAL CHAMFER A E U S K B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. TAB CONTOUR OPTIONAL WITHIN DIMENSIONS A AND K. 4. DIMENSIONS U AND V ESTABLISH A MINIMUM MOUNTING SURFACE FOR TERMINAL 6. 5. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH OR GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.025 (0.635) MAXIMUM. TERMINAL 6 V H 1 2 3 4 5 M D 0.010 (0.254) M T DIM A B C D E G H K L M N P R S U V P N G L R C SOLDERING FOOTPRINT* 8.38 0.33 INCHES MIN MAX 0.386 0.403 0.356 0.368 0.170 0.180 0.026 0.036 0.045 0.055 0.067 BSC 0.539 0.579 0.050 REF 0.000 0.010 0.088 0.102 0.018 0.026 0.058 0.078 5 _ REF 0.116 REF 0.200 MIN 0.250 MIN MILLIMETERS MIN MAX 9.804 10.236 9.042 9.347 4.318 4.572 0.660 0.914 1.143 1.397 1.702 BSC 13.691 14.707 1.270 REF 0.000 0.254 2.235 2.591 0.457 0.660 1.473 1.981 5 _ REF 2.946 REF 5.080 MIN 6.350 MIN 1.702 0.067 10.66 0.42 16.02 0.63 3.05 0.12 SCALE 3:1 1.016 0.04 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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