TC1265 800 mA Fixed-Output CMOS LDO with Shutdown Features Description • • • • • • • The TC1265 is a fixed-output, high-accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1265’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 80 µA at full load (20 to 60 times lower than in bipolar regulators). Very Low Dropout Voltage 800 mA Output Current High Output Voltage Accuracy Standard or Custom Output Voltages Overcurrent and Overtemperature Protection SHDN Input for Active Power Management ERROR Output Can Be Used as a Low Battery Detector (SOIC only) Applications • • • • • • • Key features of the TC1265 include ultra low noise operation, very low dropout voltage (typically 450 mV at full load) and fast response to step changes in load. The TC1265 incorporates both overtemperature and overcurrent protection. The TC1265 is stable with an output capacitor of only 1 µF and has a maximum output current of 800 mA. It is available in 8-Pin SOIC, 5-Pin TO-220 and 5-Pin DDPAK packages. Battery-operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulators for SMPS Pagers Package Type 5-Pin TO-220 5-Pin DDPAK Front View VIN VOUT TC1265 SHDN C1 1 µF TC1265 TC1265 1 2 3 4 5 1 2 3 4 5 SHDN BYP SHDN GND VIN VOUT GND + VOUT BYP SHDN GND VIN VOUT VIN Tab Is GND Tab Is GND Typical Application 8-Pin SOIC © 2006 Microchip Technology Inc. VOUT 1 8 VIN GND 2 7 NC NC 3 6 SHDN BYPASS 4 5 ERROR TC1265 DS21376D-page 1 TC1265 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Input Voltage .........................................................6.5V Output Voltage.................. (VSS – 0.3V) to (VIN + 0.3V) Power Dissipation................Internally Limited (Note 7) Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V Operating Temperature Range...... -40°C < TJ < 125°C Storage Temperature..........................-65°C to +150°C † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.5V, (Note 1), IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Input Operating Voltage Maximum Output Current Output Voltage VOUT Temperature Coefficient Sym Min Typ Max Units VIN 2.7 — 6.0 V — — mA IOUTMAX 800 VOUT VR – 2.5% VR ± 0.5% VR + 2.5% VR – 2% VR ± 0.5% VR + 3% — 40 — ΔVOUT/ΔT Conditions Note 2 VR ≥ 2.5V V VR = 1.8V ppm/°C Note 3 (VR + 1V) ≤ VIN ≤ 6V Line Regulation ΔVOUT/ΔVIN — 0.007 0.35 % Load Regulation (Note 4) ΔVOUT/VOUT -0.01 0.002 +0.01 %/mA IL = 0.1 mA to IOUTMAX Dropout Voltage (Note 5) VIN–VOUT — 20 30 mV VR ≥ 2.5V, IL = 100 µA — 50 160 VR ≥ 2.5V, IL = 100 mA — 150 480 VR ≥ 2.5V, IL = 300 mA — 260 800 VR ≥ 2.5V, IL = 500 mA — 450 1300 VR ≥ 2.5V, IL = 800 mA — 1000 1200 VR = 1.8V, IL = 500 mA Supply Current IDD IL = 800 mA — 1200 1400 — 80 130 µA SHDN = VIH, IL = 0 Shutdown Supply Current ISHDN — 0.05 1 µA SHDN = 0V Power Supply Rejection Ratio PSRR — 64 — db F ≤ 1 kHz Output Short Circuit Current Thermal Regulation Output Noise IOUTSC — 1200 1400 mA VOUT = 0V ΔVOUT/ΔPD — 0.04 — V/W Note 6 eN — 260 — nV/√Hz IL = IOUTMAX, F = 10 kHZ Note 1: VR is the regulator output voltage setting. 2: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX. 6 3: (V –V ) – 10 OUTMAX OUTMIN TCV OUT = -----------------------------------------------------------------------V OUT × ΔT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at a 1.5V differential. 6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details. 8: Hysteresis voltage is referenced to VR. DS21376D-page 2 © 2006 Microchip Technology Inc. TC1265 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.5V, (Note 1), IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Sym Min Typ Max Units SHDN Input High Threshold VIH 45 — — %VIN SHDN Input Low Threshold VIL — — 15 %VIN Minimum Operating Voltage VMIN 1.0 — — V Output Logic Low Voltage VOL — — 400 mV ERROR Threshold Voltage VTH — 0.95 x VR — V ERROR Positive Hysteresis VHYS — 50 — mV Conditions SHDN Input ERROR Output (SOIC Only) 1 mA Flows to ERROR Note 8 Note 1: VR is the regulator output voltage setting. 2: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX. 6 3: (V –V ) – 10 OUTMAX OUTMIN TCV OUT = -----------------------------------------------------------------------V OUT × ΔT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at a 1.5V differential. 6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details. 8: Hysteresis voltage is referenced to VR. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.5V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range TA -40 — +125 °C Operating Temperature Range TJ -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 5L-DDPAK θJA — 57 — °C/W Thermal Resistance, 5L-TO-220 θJA — 71 — °C/W Thermal Resistance, 8L-SOIC θJA — 163 — °C/W (Note 1) Thermal Package Resistances Note 1: Operation in this range must not cause TJ to exceed Maximum Junction Temperature (+125°C). © 2006 Microchip Technology Inc. DS21376D-page 3 TC1265 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. LINE REGULATION (%) Note: 0.020 150 0.018 135 0.016 120 0.014 105 0.012 90 IDD (µA) 2.0 0.010 0.008 60 0.006 45 0.004 30 0.002 15 0.000 -40°C 0°C 25°C 70°C 85°C VOUT = 3V 75 0 -40°C 125°C Line Regulation vs. NOISE (µV/√Hz) 10.0 RLOAD = 50Ω COUT = 1µF 1.0 0.1 FIGURE 2-4: DROPOUT VOLTAGE (V) FIGURE 2-1: Temperature. 0°C 25°C 70°C 125°C 85°C TEMPERATURE (°C) TEMPERATURE (°C) IDD vs. Temperature. 0.600 0.550 0.500 0.450 0.400 0.350 125°C 85°C 70°C 25°C 0.300 0°C 0.250 0.200 -40°C 0.150 0.100 0.050 0.0 0.01 0.01 1 10 100 0.000 1000 0 100 200 300 400 500 600 700 800 ILOAD (mA) FREQUENCY (kHz) FIGURE 2-2: Output Noise vs. Frequency. FIGURE 2-5: ILOAD. 3.030 3.020 0.0090 0.0080 0.0070 0.0060 0.0050 VOUT = 3V 1 mA to 800 mA 0.0040 0.0030 2.990 2.980 2.970 2.950 2.940 0.0010 2.930 0.0100 -40°C 0°C 25°C 70°C 85°C 125°C 2.920 -40°C DS21376D-page 4 ILOAD = 300mA ILOAD = 500mA ILOAD = 800mA 0°C 25°C 70°C 85°C 125°C TEMPERATURE (°C) TEMPERATURE (°C) Load Regulation vs. 0.1mA 2.960 0.0020 FIGURE 2-3: Temperature. ILOAD = 3.010 3.000 VOUT (V) LOAD REGULATION (%/mA) 0.0100 3.0V Dropout Voltage vs. FIGURE 2-6: 3.0V VOUT vs.Temperature. © 2006 Microchip Technology Inc. TC1265 2.0 TYPICAL PERFORMANCE CURVES (CONT) 0.090 0.080 ISHDN (µA) 0.070 0.060 0.050 0.040 0.030 0.020 0.010 0.000 -40°C 0°C 25°C 70°C 85°C 125°C TEMPERATURE (°C) FIGURE 2-1: ISHDN vs. Temperature. © 2006 Microchip Technology Inc. DS21376D-page 5 TC1265 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. (8-Pin SOIC) Pin No. (5-Pin DDPAK) (5-Pin TO-220) Symbol 1 5 VOUT Regulated voltage output 2 3 GND Ground terminal 3 — NC 4 1 BYPASS Reference bypass input 5 — ERROR Out-of-Regulation Flag (open-drain output) 6 2 SHDN 7 — NC No connect 8 4 VIN Unregulated supply input 3.1 Description No connect Shutdown control input Regulated Output Voltage (VOUT) Regulated voltage output. 3.2 Ground (GND) 3.4 Out-of-Regulation Flag (ERROR) Out-of-regulation flag (open-drain output). This output goes low when VOUT is out-of-tolerance by approximately -5%. Ground terminal. 3.5 3.3 Shutdown control input. The regulator is fully enabled when a logic-high is applied to this input. The regulator enters shutdown when a logic-low is applied to this input. During shutdown, the output voltage falls to zero and the supply current is reduced to 0.05 µA (typical). Reference Bypass (BYPASS) Reference bypass input. Connecting a 470 pF to this input further reduces output noise. 3.6 Shutdown Control (SHDN) Unregulated Supply (VIN) Unregulated supply input. DS21376D-page 6 © 2006 Microchip Technology Inc. TC1265 4.0 DETAILED DESCRIPTION 4.2 The TC1265 is a precision, fixed-output LDO. Unlike bipolar regulators, the TC1265’s supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire 0 mA to ILOADMAX load current range (an important consideration in RTC and CMOS RAM battery back-up applications). Figure 4-1 shows a typical application circuit. + + 1 µF C1 Battery VIN VOUT TC1265 + 1 µF C2 VOUT V+ Shutdown Control (to CMOS Logic or Tie to VIN, if unused) ERROR C3 Required Only if ERROR is used as a Processor RESET Signal (See Text) R1 1M ERROR is driven low whenever VOUT falls out of regulation by more than – 5% (typ.). This condition may be caused by low input voltage, output current limiting, or thermal limiting. The ERROR threshold is 5% below rated VOUT regardless of the programmed output voltage value (e.g., ERROR = VOL at 4.75V (typ.) for a 5.0V regulator and 2.85V (typ.) for a 3.0V regulator). ERROR output operation is shown in Figure 4-2. Note that ERROR is active when VOUT is at or below VTH and inactive when VOUT is above VTH + VH. GND SHDN ERROR Output BATTLOW or RESET + 0.2 µF C3 As shown in Figure 4-1, ERROR can be used as a battery low flag or as a processor RESET signal (with the addition of timing capacitor C3). R1 x C3 should be chosen to maintain ERROR below VIH of the processor RESET input for at least 200 ms to allow time for the system to stabilize. Pull-up resistor R1 can be tied to VOUT, VIN or any other voltage less than (VIN + 0.3V). VOUT VTH FIGURE 4-1: 4.1 Typical Application Circuit. Output Capacitor A 1 µF (min.) capacitor from VOUT to ground is required. The output capacitor should have an Effective Series Resistance (ESR) greater than 0.1Ω and less than 5Ω. A 1 µF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C. When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors, and by employing passive filtering techniques. © 2006 Microchip Technology Inc. Hysteresis (VH) ERROR VIH VOL FIGURE 4-2: ERROR Output Operation. DS21376D-page 7 TC1265 5.0 THERMAL CONSIDERATIONS 5.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 5.2 Power Dissipation The amount of power the regulator dissipates is primarily a function of input voltage, output voltage and output current. The following equation is used to calculate worst-case actual power dissipation: EQUATION 5-1: P D = ( V INMAX – V OUTMIN )I LOADMAX Where: PD = Worst-case actual power dissipation VINMAX = Maximum voltage on VIN VOUTMIN = Minimum regulator output voltage ILOADMAX = Maximum output (load) current The maximum allowable power dissipation (Equation 5-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). P DMAX Copper Area (Topside)* Copper Area (Backside) Board Area Thermal Resistance (θJA) 2500 sq mm 2500 sq mm 2500 sq mm 25°C/W 1000 sq mm 2500 sq mm 2500 sq mm 27°C/W 125 sq mm 2500 sq mm 2500 sq mm 35°C/W * Tab of device attached to top-side copper Equation 5-1 can be used in conjunction with Equation 5-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 3.3V ± 10% VOUTMIN = 2.7V ± 0.5% ILOADMAX = 275 mA TJMAX = 125°C TAMAX = 95°C θJA = 60°C/W (SOIC) Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: P D = ( 3.3 × 1.1 ) – ( 2.7 × .995 ) 275 × 10 T JMAX – T AMAX = -------------------------------------θ JA –3 P D = 260 mW PD = Worst-case actual power dissipation VINMAX = Maximum voltage on VIN VOUTMIN = Minimum regulator output voltage ILOADMAX = Maximum output (load) current Table 5-1 and Table 5-2 show various values of θJA for the TC1265 package types. TABLE 5-1: THERMAL RESISTANCE GUIDELINES FOR TC1265 IN 5-PIN DDPAK/TO-220 PACKAGE P D ≈ ( V INMAX – V OUTMIN )I LOADMAX EQUATION 5-2: Where: TABLE 5-2: THERMAL RESISTANCE GUIDELINES FOR TC1265 IN 8-PIN SOIC PACKAGE Copper Area (Topside)* Copper Area (Backside) Board Area Thermal Resistance (θJA) 2500 sq mm 2500 sq mm 2500 sq mm 60°C/W 1000 sq mm 2500 sq mm 2500 sq mm 60°C/W 225 sq mm 2500 sq mm 2500 sq mm 68°C/W 100 sq mm 2500 sq mm 2500 sq mm 74°C/W Maximum allowable power dissipation: T JMAX – T AMAX P DMAX = -------------------------------------θ JA ( 125 – 95 ) P DMAX = ------------------------60 P DMAX = 500 mW In this example, the TC1265 dissipates a maximum of 260 mW, below the allowable limit of 500 mW. In a similar manner, Equation 5-1 and Equation 5-2 can be used to calculate maximum current and/or input voltage limits. For example, the maximum allowable VIN is found by substituting the maximum allowable power dissipation of 500 mW into Equation 5-1, from which VINMAX = 4.6V. * Pin 2 is ground. Device is mounted on the top-side. DS21376D-page 8 © 2006 Microchip Technology Inc. TC1265 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead DDPAK XXXXXXXXX XXXXXXXXX YYWWNNN TC1265 3.3VET 0642256 5-Lead TO-220 8-Lead SOIC (150 mil) Legend: XX...X Y YY WW NNN e3 * Note: Example: TC1265 e3 3.3VAT^^ 0642256 XXXXXXXXX XXXXXXXXX YYWWNNN XXXXXXXX XXXXYYWW NNN Example Example: 1265-33V e3 OA^^0642 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2006 Microchip Technology Inc. DS21376D-page 9 TC1265 5-Lead Plastic (ET) (DDPAK) Note: ) For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E L3 E1 D2 D D1 1 e b BOTTOM VIEW α (5X) TOP VIEW c2 A Φ A1 c L Units Dimension Limits MILLIMETERS INCHES* NOM MIN Number of Pins MIN MAX MAX NOM 5 5 Pitch e Overall Height A .170 .177 .183 4.32 4.50 4.65 A1 E .000 .005 .398 .010 0.00 .410 9.78 0.13 10.11 0.25 10.41 Standoff Overall Width § .067 BSC .385 1.70 BSC Exposed Pad Width E1 Molded Package Length D .330 .350 .370 8.38 8.89 9.40 Overall Length D1 .549 .577 .605 13.94 14.66 15.37 Exposed Pad Length Lead Thickness D2 c .014 .020 .026 0.36 0.51 0.66 Pad Thickness Lead Width c2 b .045 .026 -.032 .055 .037 1.14 0.66 -0.81 1.40 0.94 6.50 REF .256 REF .303 REF 7.75 REF Foot Length L .068 .089 .110 1.73 2.26 2.79 Pad Length L3 .045 -- .067 Foot Angle Φ α -- -- 8° 1.14 -- --- 1.70 8° -- 7° -- 7° Mold Draft Angle 3° 3° * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. BSC: Basic Dimension. Theoretically exact value shown without tolerances. See ASME Y14.5M REF: Reference Dimension, usually without tolerance, for information purposes only. See ASME Y14.5M JEDEC equivalent: TO-252 Drawing No. C04-012 Revised 07-19-05 DS21376D-page 10 © 2006 Microchip Technology Inc. TC1265 5-Lead Plastic Transistor Outline (AT) (TO-220) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging L H1 Q β e3 e1 E e EJECTOR PIN ØP α (5°) C1 A J1 F D Units Dimension Limits MILLIMETERS INCHES* MIN MAX MIN MAX Lead Pitch e .060 .072 1.52 1.83 Overall Lead Centers e1 .263 .273 6.68 6.93 Space Between Leads e3 .030 .040 0.76 1.02 Overall Height A .160 .190 4.06 4.83 Overall Width E .385 .415 9.78 10.54 14.99 Overall Length D .560 .590 14.22 Flag Length H1 .234 .258 5.94 6.55 Flag Thickness F .045 .055 1.14 1.40 Through Hole Center Q .103 .113 2.62 2.87 Through Hole Diameter P .146 .156 3.71 3.96 14.22 Lead Length L .540 .560 13.72 Base to Bottom of Lead J1 .090 .115 2.29 2.92 Lead Thickness C1 .014 .022 0.36 0.56 Lead Width β .025 .040 0.64 1.02 Mold Draft Angle α 3° 7° 3° 7° * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254 mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036 Revised 08-01-05 © 2006 Microchip Technology Inc. DS21376D-page 11 TC1265 8-Lead Plastic Small Outline (SN) – Narrow, 150 mil Body (SOIC) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 p D 2 B n 1 h α 45° c A2 A φ β L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D h L φ c B α β MIN .053 .052 .004 .228 .146 .189 .010 .019 0 .008 .013 0 0 A1 INCHES* NOM 8 .050 .061 .056 .007 .237 .154 .193 .015 .025 4 .009 .017 12 12 MAX .069 .061 .010 .244 .157 .197 .020 .030 8 .010 .020 15 15 MILLIMETERS NOM 8 1.27 1.35 1.55 1.32 1.42 0.10 0.18 5.79 6.02 3.71 3.91 4.80 4.90 0.25 0.38 0.48 0.62 0 4 0.20 0.23 0.33 0.42 0 12 0 12 MIN MAX 1.75 1.55 0.25 6.20 3.99 5.00 0.51 0.76 8 0.25 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 DS21376D-page 12 © 2006 Microchip Technology Inc. TC1265 APPENDIX A: REVISION HISTORY Revision D (October 2006) • Section 1.0 “Electrical Characteristics”: Changed dropout voltage voltage typical value for IL = 500 mA from 700 to 1000 and maximum value from 1000 to 1200 for. Changed typical value for IL = 800 mA from 890 to 1200 • Section 6.0 “Packaging Information”: Added pb-free symbol to package marking information • Added disclaimer to package outline drawings • Updated package outline drawings as needed • Added Appendix A - Revision History Revision C (October 2004) • Not Documented Revision B (May 2002) • Not Documented Revision A (March 2002) • Original Release of this Document. © 2006 Microchip Technology Inc. DS21376D-page 13 TC1265 NOTES: DS21376D-page 14 © 2006 Microchip Technology Inc. TC1265 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X.XX XX XX Device Voltage Option Package Tape and Reel Device TC1265 Fixed Output CMOS LDO with Shutdown Voltage Option:* 1.8V 2.5V 3.0V 3.3V Examples: a) b) c) d) TC1265-1.8VAT TC1265-2.5VAT TC1265-3.0VAT TC1265-3.3VAT a) TC1265-1.8VETTR 1.8V LDO, DDPAK-5 pkg., Tape and Reel TC1265-2.5VETTR 2.5V LDO, DDPAK-5 pkg., Tape and Reel TC1265-3.0VETTR 3.0V LDO, DDPAK-5 pkg., Tape and Reel TC1265-3.3VETTR 3.3V LDO, DDPAK-5 pkg., Tape and Reel b) = = = = 1.8V 2.5V 3.0V 3.3V * Other output voltages are available. Please contact your local Microchip sales office for details. Package AT = ET = ETTR = OA = OATR = Plastic (TO-220), 5-Lead Plastic Transistor Outline (DDPAK), 5-Lead Plastic Transistor Outline (DDPAK), 5-Lead, Tape and Reel Plastic SOIC, (150 mil Body), 8-lead Plastic SOIC, (150 mil Body), 8-lead, Tape and Reel c) d) a) b) c) d) e) f) g) h) © 2006 Microchip Technology Inc. 1.8V LDO, TO-220-5 pkg. 2.5V LDO, TO-220-5 pkg. 3.0V LDO, TO-220-5 pkg. 3.3V LDO, TO-220-5 pkg. TC1265-1.8VOA 1.8V LDO, SOIC-8 pkg. TC1265-1.8VOATR 1.8V LDO, SOIC-8 pkg., Tape and Reel TC1265-2.5VOA 2.5V LDO, SOIC-8 pkg. TC1265-2.5VOATR 2.5V LDO, SOIC-8 pkg., Tape and Reel TC1265-3.0VOA 3.0V LDO, SOIC-8 pkg. TC1265-3.0VOATR 3.0V LDO, SOIC-8 pkg., Tape and Reel TC1265-3.3VOA 3.3V LDO, SOIC-8 pkg. TC1265-3.3VOATR 3.3V LDO, SOIC-8 pkg., Tape and Reel DS21376D-page 15 TC1265 NOTES: DS21376D-page 16 © 2006 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. 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Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active Thermistor, Mindi, MiWi, MPASM, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2006, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company’s quality system processes and procedures are for its PIC® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2006 Microchip Technology Inc. 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