MICROCHIP TC1268

TC1268
500mA Fixed Output, Fast Response CMOS LDO with Shutdown
Features
General Description
•
•
•
•
•
•
•
•
The TC1268 is a fixed output, fast turn-on, high
accuracy (typically ±0.5%) CMOS low dropout
regulator. Designed specifically for battery-operated
systems, the TC1268’s CMOS construction eliminates
wasted ground current, significantly extending battery
life. Total supply current is typically 80µA at full load (20
to 60 times lower than in bipolar regulators).
Very Low Dropout Voltage
500mA Output Current
High Output Voltage Accuracy
Standard or Custom Output Voltages
Over Current and Over Temperature Protection
SHDN Input for Active Power Management
ERROR Output to Detect Low Battery
5µsec (typical) Wake-up Time from SHDN
Applications
•
•
•
•
•
•
•
•
•
RAMBUS Memory Module
Battery-Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulator for SMPS
Pagers
Digital Cameras
Typical Application
VIN
GND
Output*
Voltage Package
(V)
TC1268-2.5VOA
2.5
VIN
VOUT
TC1268
Device Selection Table
Part Number
TC1268’s key features include ultra low noise, very low
dropout voltage (typically 350mV at full load), and
fast response to step changes in load. The TC1268
also has a fast wake-up response time (5µsec typically)
when released from shutdown. The TC1268
incorporates both over temperature and over current
protection. The TC1268 is stable with an output
capacitor of only 1µF and has a maximum output
current of 500mA.
SHDN
+
VOUT
COUT
1µF
SHDN
Junction
Temp. Range
8-Pin SOIC -40°C to +125°C
*Other output voltages and package options are available.
Please contact Microchip Technology Inc. for details.
Package Type
8-Pin SOIC
VOUT
1
GND
2
NC
3
BYPASS
4
TC1268
 2002 Microchip Technology Inc.
8
VIN
7
NC
6
SHDN
5
ERROR
DS21379B-page 1
TC1268
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V
Operating Temperature ............... -40°C < TJ < +125°C
Storage Temperature.......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1268 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH , TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
Input Operating Voltage
2.7
—
6.0
V
IOUTMAX
Maximum Output Current
500
—
—
mA
VOUT
Output Voltage
—
VR + 2.5%
V
Note 1
Note 2
—
VR ±0.5%
VR – 2.5%
—
Note 8
∆VOUT/∆T
VOUT Temperature Coefficient
—
40
—
ppm/°C
∆VOUT/∆VIN
Line Regulation
—
0.05
0.35
%
∆VOUT/VOUT
Load Regulation
—
0.002
0.01
%/mA
VIN-VOUT
Dropout Voltage
—
—
—
—
20
60
200
350
30
160
480
800
mV
IL = 100µA
IL = 100mA
IL = 300mA
IL = 500mA (Note 4)
IDD
Supply Current (Active Mode)
—
80
130
µA
SHDN = VIH, IL = 0
ISHDN
Supply Current (Shutdown Mode)
—
5
—
µA
TWK
Wake-up Time
—
5
10
µsec
VIN = 3.5V, VOUT = 2.5V
CIN = COUT = 1µF
IL = 250mA (See Figure 3-2)
—
15
—
µsec
VIN = 3.5V, VOUT = 2.5V
CIN = COUT = 1µF
IL = 250mA (See Figure 3-2)
dB
(VR + 1V) ≤ VIN ≤ 6V
SHDN = 0V
(from Shutdown Mode)
TS
Settling Time
PSRR
Power Supply Rejection Ratio
—
64
—
IL = 0.1mA to IOUTMAX (Note 3)
(from Shutdown Mode)
FRE ≤ 1kHz
IOUTSC
Output Short Circuit Current
—
1200
1400
mA
VOUT = 0V
∆VOUT/∆PD
Thermal Regulation
—
0.04
—
V/W
Note 5
eN
Output Noise
—
260
—
nV/√Hz
VIH
SHDN Input High Threshold
45
—
—
%VIN
VIL
SHDN Input Low Threshold
—
—
15
%VIN
IL = IOUTMAX
SHDN Input
Note 1:
2:
3:
4:
5:
6:
7:
8:
VR is the regulator output voltage setting.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced to VR.
The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX.
DS21379B-page 2
 2002 Microchip Technology Inc.
TC1268
TC1268 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH , TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
ERROR Output
VMIN
Minimum Operating Voltage
1.0
—
—
V
VOL
Output Logic Low Voltage
—
—
400
mV
VTH
ERROR Threshold Voltage
—
0.95 x VR
—
V
Note 1:
2:
3:
4:
5:
6:
7:
8:
1 mA Flows to ERROR
VR is the regulator output voltage setting.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced to VR.
The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX.
 2002 Microchip Technology Inc.
DS21379B-page 3
TC1268
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(8-Pin SOIC)
Symbol
1
VOUT
Regulated voltage output.
2
GND
Ground terminal.
3
NC
4
BYPASS
Reference bypass input. Connecting a 470pF to this input further reduces output noise.
5
ERROR
Out-of-Regulation Flag. (Open drain output). This output goes low when VOUT is out-of-tolerance
by approximately -5%.
6
SHDN
Shutdown control input. The regulator is fully enabled when a logic high is applied to this input.
The regulator enters shutdown when a logic low is applied to this input. During shutdown, output
voltage falls to zero and supply current is reduced to 5µA (typical).
7
NC
No connect.
8
VIN
Unregulated supply input.
3.0
Description
No connect.
DETAILED DESCRIPTION
The TC1268 is a precision, fixed output LDO. Unlike
bipolar regulators, the TC1268 supply current does
not increase with load current. In addition, VOUT
remains stable and within regulation over the entire
0mA to ILOAD MAX load current range, (an important
consideration in RTC and CMOS RAM battery back-up
applications). Figure 3-1 shows a typical application
circuit.
FIGURE 3-1:
TYPICAL APPLICATION
CIRCUIT
+
+
Battery
CIN
1µF
VIN
VOUT
+
TC1268
ON
SHDN
SHDN
–
VOUT
COUT
1µF
OFF
V+
GND
The Wake-up Time (TWK) is an important parameter
to consider when using the TC1268 in RAMBUS
applications. In this application, the bus voltage is held
at 2.5V by a switching regulator during normal power
conditions and can be switched to low power mode,
where the TC1268 takes over and supplies the same
2.5V, but at a much lower current (300mA). In order to
not see the bus voltage drop during the transition from
high power to low power, the TC1268 has a very fast
wake-up time of 5µsec to support the 2.5V rail. This
makes the TC1268 ideal for applications involving
RAMBUS.
R1
1M
BYP
CBYP
10nF
The total turn on response is defined as the Settling
Time (TS), see Figure 3-2. Settling Time (inclusive with
TWK) is defined as the condition when the output is
within 2% of its fully enabled value (15µsec typical)
when released from shutdown. The settling time of the
output voltage is dependent on load conditions and
output capacitance on VOUT (RC response).
FIGURE 3-2:
ERROR
+
C1
WAKE-UP RESPONSE
TIME
0.2µF
C1 required only if ERROR is used
as a processor RESET signal (See Text)
3.1
Turn On Response
The turn on response is defined as two separate
response categories, Wake-up Time (TWK) and Settling
Time (TS).
VIH
SHDN
VIL
TS
98%
VOUT
2%
TWK
The TC1268 has a fast Wake-up Time (5µsec typical)
when released from shutdown. See Figure 3-2 for the
Wake-up Time designated as TWK. The Wake-up Time
is defined as the time it takes for the output to rise to 2%
of the VOUT value after being released from shutdown.
DS21379B-page 4
 2002 Microchip Technology Inc.
TC1268
3.2
Bypass Input
A 10nF capacitor connected from the bypass input to
ground reduces noise present on the internal
reference, which in turn, significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but this results in a longer time period to achieve
the rated output voltage, once power is initially applied.
3.3
Output Capacitor
A 1µF (min) capacitor from VOUT to ground is required.
The output capacitor should have an effective series
resistance greater than 0.1Ω and less than 5Ω, and a
resonant frequency above 1MHz. A 1µF capacitor
should be connected from VIN to GND if there is more
than 10 inches of wire between the regulator and the
AC filter capacitor, or if a battery is used as the power
source. Aluminum electrolytic or tantalum capacitor
types can be used. (Since many aluminum electrolytic
capacitors freeze at approximately -30°C, solid
tantalums are recommended for applications operating
below -25°C.) When operating from sources other than
batteries, supply noise rejection and transient
response can be improved by increasing the value of
the input and output capacitors and employing passive
filtering techniques.
3.4
ERROR Output
ERROR is driven low whenever VOUT falls out of
regulation by more than -5% (typical). This condition
may be caused by low input voltage, output current
limiting, or thermal limiting.
The ERROR threshold is 5% below rated VOUT,
regardless of the programmed output voltage value
(e.g., ERROR = VOL at 2.375V (typ.) for a 2.5V
regulator). ERROR output operation is shown in
Figure 3-3. Note that ERROR is active when VOUT is at
or below VTH, and inactive when VOUT is above V TH +
VH.
As shown in Figure 3-1, ERROR can be used as a
battery low flag, or as a processor RESET signal (with
the addition of timing capacitor C1). R1 x C1 should be
chosen to maintain ERROR below VIH of the processor
RESET input for at least 200msec to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT, VIN or any other voltage less than (VIN + 0.3V).
FIGURE 3-3:
ERROR OUTPUT
OPERATION
VOUT
VTH
Hysteresis (VH)
ERROR
VIH
VOL
 2002 Microchip Technology Inc.
DS21379B-page 5
TC1268
4.0
THERMAL CONSIDERATIONS
4.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
4.2
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
Equation 4-1 can be used in conjunction with
Equation 4-2 to ensure regulator thermal operation is
within limits. For example:
Given:
VINMAX
= 3.3V ± 10%
VOUTMIN = 2.5V ± 0.5%
ILOADMAX = 275mA
TJMAX
= 125°C
TAMAX
= 95°C
θJA
= 60°C/W
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
EQUATION 4-1:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
Where:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.3 x 1.1) – (2.5 x .995)]275 x 10-3
= 314mW
PD = Worst case actual power dissipation
VINMAX = Maximum voltage on V IN
VOUTMIN = Minimum regulator output voltage
ILOADMAX = Maximum output (load) current
The
maximum
allowable
power
dissipation
(Equation 4-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (θJA).
EQUATION 4-2:
PDMAX = (TJMAX – TAMAX)
θJA
Where all terms are previously defined.
Maximum allowable power dissipation:
PDMAX = (TJMAX – TAMAX)
θJA
= (125 – 95)
60
= 500mW
In this example, the TC1268 dissipates a maximum of
314mW; below the allowable limit of 500mW. In a
similar manner, Equation 4-1 and Equation 4-2 can be
used to calculate maximum current and/or input
voltage limits. For example, the maximum allowable
VIN is found by substituting the maximum allowable
power dissipation of 500mW into Equation 4-1, from
which VINMAX = 3.94V.
Table 4-1 shows various values of θJA for the TC1268
package.
TABLE 4-1:
Copper
Area
(Topside)*
THERMAL RESISTANCE
GUIDELINES FOR TC1268 IN
8-PIN SOIC PACKAGE
Copper
Area
(Backside)
Board
Area
Thermal
Resistance
(θJA)
2500 sq mm 2500 sq mm 2500 sq mm
60°C/W
1000 sq mm 2500 sq mm 2500 sq mm
60°C/W
225 sq mm
2500 sq mm 2500 sq mm
68°C/W
100 sq mm
2500 sq mm 2500 sq mm
74°C/W
*Pin 2 is ground. Device is mounted on topside.
DS21379B-page 6
 2002 Microchip Technology Inc.
TC1268
5.0
Note:
TYPICAL CHARACTERISTICS
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Fast Response TC1268
Fast Response TC1268
SHDN
Conditions:
VOUT = 2.50V
VIN = 3.50V
CIN = COUT = 1µF
RLOAD = 10Ω
SHDN
Conditions:
VOUT = 2.50V
VIN = 3.50V
CIN = COUT = 1µF
RLOAD = 10Ω
VOUT
VOUT
100µsec/DIV; 15µsec Rise Time
 2002 Microchip Technology Inc.
10µsec/DIV; 15µsec Rise Time
DS21379B-page 7
TC1268
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Package marking data not available at this time.
6.2
Taping Form
Component Taping Orientation for 8-Pin SOIC (Narrow) Devices
User Direction of Feed
PIN 1
W
P
Standard Reel Component Orientation
for TR Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size
Package
8-Pin SOIC (N)
6.3
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
12 mm
8 mm
2500
13 in
Package Dimensions
8-Pin SOIC
PIN 1
.157 (3.99)
.150 (3.81)
.244 (6.20)
.228 (5.79)
.050 (1.27) TYP.
.197 (5.00)
.189 (4.80)
.069 (1.75)
.053 (1.35)
.020 (0.51) .010 (0.25)
.013 (0.33) .004 (0.10)
.010 (0.25)
.007 (0.18)
8° MAX..
.050 (1.27)
.016 (0.40)
Dimensions: inches (mm)
DS21379B-page 8
 2002 Microchip Technology Inc.
TC1268
SALES AND SUPPORT
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21379B-page 9
TC1268
NOTES:
DS21379B-page 10
 2002 Microchip Technology Inc.
TC1268
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro ® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2002 Microchip Technology Inc.
DS21379B-page 11
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Japan
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
China - Beijing
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
China - Hong Kong SAR
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
New York
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
*DS21379B*
DS21379B-page 12
 2002 Microchip Technology Inc.