NTB5405N, NVB5405N Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK Features • • • • • Low RDS(on) High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − NVB5405N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications V(BR)DSS RDS(ON) TYP ID MAX (Note 1) 40 V 4.9 mΩ @ 10 V 116 A • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 116 A Continuous Drain Current − RJC Steady State Power Dissipation − RJC Steady State Continuous Drain Current − RJA (Note 1) Steady State Power Dissipation − RJA (Note 1) Steady State Pulsed Drain Current TC = 25°C TC = 100°C 150 W TA = 25°C ID 16.5 A TA = 100°C ID 11.6 TA = 25°C tp = 10 s Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 40 A, L = 1 mH, RG = 25 ) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) PD 3.0 W IDM 280 A TJ, TSTG −55 to 175 °C IS 75 A EAS 800 mJ TL 260 °C Symbol Max Unit Junction−to−Case (Drain) RθJC 1.0 °C/W Junction−to−Ambient (Note 1) RθJA 50 °C/W 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). October, 2011 − Rev. 5 1 2 NTB5405NG AYWW D2PAK CASE 418B STYLE 2 1 NTB5405N G A Y WW = Specific Device Code = Pb−Free Device = Assembly Location = Year = Work Week ORDERING INFORMATION THERMAL RESISTANCE RATINGS © Semiconductor Components Industries, LLC, 2011 MARKING DIAGRAM 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Parameter S 82 PD TC = 25°C G 1 Package Shipping† NTB5405NG Device D2PAK (Pb−Free) 50 Units / Rail NTB5405NT4G D2PAK (Pb−Free) 800 / Tape & Reel NVB5405NT4G D2PAK (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTB5405N/D NTB5405N, NVB5405N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V 39 IDSS VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 100°C 10 IGSS VDS = 0 V, VGS = ±30 V VGS(TH) VGS = VDS, ID = 250 A ±100 A nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ 1.5 3.5 −7.0 RDS(on) gFS V mV/°C VGS = 10 V, ID = 40 A 4.9 5.8 VGS = 5.0 V, ID = 15 A 7.0 8.0 VGS = 10 V, ID = 15 A 32 m S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 32 V 2700 4000 700 1400 300 600 Total Gate Charge QG(TOT) 88 Threshold Gate Charge QG(TH) 3.25 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 10 V, VDS = 32 V, ID = 40 A pF nC 9.5 37 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) ns 8.5 VGS = 10 V, VDD = 32 V, ID = 40 A, RG = 2.5 tf 52 55 70 SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) ns 19 VGS = 5 V, VDD = 20 V, ID = 20 A, RG = 2.5 tf 153 32 42 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.82 TJ = 100°C TBD tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 66 VGS = 0 V, dISD/dt = 100 A/s, IS = 20 A QRR http://onsemi.com 2 V ns 35 31 113 2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.1 nC NTB5405N, NVB5405N TYPICAL PERFORMANCE CURVES 125 TJ = 25°C VGS = 6 V to 10 V VDS ≥ 10 V 175 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 200 5.5 V 150 5V 125 4.5 V 100 75 4V 50 25 3.5 V 0 100 75 50 TJ = 125°C 25 TJ = 25°C TJ = −55°C 0 0 1 3 2 5 4 6 7 9 8 10 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 2 3 5 6 7 4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.01 ID = 40 A TJ = 25°C 0.009 0.008 0.007 0.006 0.005 0.004 0.003 3 5 4 7 6 9 8 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 1. On−Region Characteristics 0.01 TJ = 25°C 0.009 0.008 0.007 VGS = 5 V 0.006 0.005 VGS = 10 V 0.004 0.003 0.002 15 25 35 55 65 75 85 95 105 115 Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 100000 2 VGS = 0 V ID = 40 A VGS = 10 V 10000 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 45 ID, DRAIN CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1.8 8 1.4 1.2 1 TJ = 175°C 1000 TJ = 100°C 100 0.8 0.6 −50 −25 0 25 50 75 100 150 125 175 10 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 40 NTB5405N, NVB5405N TYPICAL PERFORMANCE CURVES TJ = 25°C 7000 C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V VGS = 0 V Ciss 6000 5000 Crss 4000 Ciss 3000 2000 Coss 1000 Crss 0 10 VGS 0 10 VDS 30 20 12 36 QT 10 8 24 18 6 QGS QGD 4 12 2 ID = 40 A TJ = 25°C 0 0 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 0 90 tf 100 td(off) tr td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 35 30 25 20 15 10 5 0 0.4 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.5 0.7 0.6 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1 Figure 10. Diode Forward Voltage vs. Current 800 1000 100 s 10 s 10 ms 100 dc 10 VGS = 20 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 1 ID = 40 A 700 AVALANCHE ENERGY (mJ) 1 ms ID, DRAIN CURRENT (A) 80 40 VDS = 32 V ID = 40 A VGS = 10 V 1 50 70 30 20 40 60 QG, TOTAL GATE CHARGE (nC) 6 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 1 30 VGS VDS 40 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 8000 10 600 500 400 300 200 100 0 25 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTB5405N, NVB5405N r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL PERFORMANCE CURVES 1.0 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) 0.01 0.00001 0.0001 0.001 0.01 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0.1 1.0 10 NTB5405N, NVB5405N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTB5405N, NVB5405N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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