MBR40L45CTG, NRVBB40L45CTT4G Switch-mode Power Rectifier 45 V, 40 A www.onsemi.com Features and Benefits • • • • • • • • SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 2, 4 3 MARKING DIAGRAMS 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation TO−220 CASE 221A STYLE 6 1 Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO−220) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube for TO−220 2 AYWW B40L45G AKA 3 4 D2PAK 3 CASE 418B STYLE 3 1 AY WW B40L45G AKA 3 B40L45 A Y WW G AKA = Device Code = Assembly Location = Year = Work Week = Pb−Free Device = Polarity Designator ORDERING INFORMATION Package Shipping† MBR40L45CTG TO−220 (Pb−Free) 50 Units/Rail NRVBB40L45CTT4G D2PAK 3 (Pb−Free) 800 /Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 3 1 Publication Order Number: MBR40L45CT/D MBR40L45CTG, NRVBB40L45CTT4G MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 145°C IF(AV) 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 40 A Non-repetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60 Hz) IFSM 200 A Operating Junction Temperature (Note 1) TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA 1.9 72.9 Symbol Value Unit °C/W Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) (IF = 40 A, TC = 25°C) (IF = 40 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V 0.50 0.48 0.63 0.68 mA 1.2 275 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%. www.onsemi.com 2 MBR40L45CTG, NRVBB40L45CTT4G TYPICAL CHARACTERISTICS 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 100 100 150°C 25°C 10 125°C 1 150°C 25°C 10 125°C 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.6 1E+00 IR, MAXIMUM REVERSE CURRENT (A) 1E+00 IR, REVERSE CURRENT (A) 150°C 1E−01 150°C 1E−01 125°C 1E−02 125°C 1E−02 1E−03 1E−03 1E−04 25°C 1E−04 25°C 1E−05 1E−05 5 10 15 20 25 30 35 40 45 50 0 5 10 VR, REVERSE VOLTAGE (V) 15 20 dc 40 35 Square Wave 30 25 20 15 10 5 0 80 90 30 35 40 Figure 4. Maximum Reverse Current 50 45 25 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 0 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating for MBR40L45CTG www.onsemi.com 3 45 50 MBR40L45CTG, NRVBB40L45CTT4G 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 Square Wave dc 25°C 1000 100 0 R(t) TRANSIENT THERMAL RESISTANCE C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) TYPICAL CHARACTERISTICS 5 10 15 20 25 30 35 0 40 5 10 15 20 25 35 30 Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 6. Forward Power Dissipation Figure 7. Capacitance 40 45 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 T1, TIME (sec) Figure 8. Thermal Response Junction−to−Case for MBR40L45CTG www.onsemi.com 4 1 10 100 1000 MBR40L45CTG, NRVBB40L45CTT4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBR40L45CTG, NRVBB40L45CTT4G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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