MBR40L45CT D

MBR40L45CTG,
NRVBB40L45CTT4G
Switch-mode
Power Rectifier
45 V, 40 A
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Features and Benefits
•
•
•
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIERS
40 AMPERES, 45 VOLTS
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
2, 4
3
MARKING
DIAGRAMS
4
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
TO−220
CASE 221A
STYLE 6
1
Mechanical Characteristics:
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube for TO−220
2
AYWW
B40L45G
AKA
3
4
D2PAK 3
CASE 418B
STYLE 3
1
AY WW
B40L45G
AKA
3
B40L45
A
Y
WW
G
AKA
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
Package
Shipping†
MBR40L45CTG
TO−220
(Pb−Free)
50 Units/Rail
NRVBB40L45CTT4G
D2PAK 3
(Pb−Free)
800 /Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 3
1
Publication Order Number:
MBR40L45CT/D
MBR40L45CTG, NRVBB40L45CTT4G
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR) TC = 145°C
IF(AV)
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM
40
A
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half-wave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Storage Temperature
Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
> 400
> 8000
V
ESD Ratings: Machine Model = C
Human Body Model = 3B
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
RqJC
RqJA
1.9
72.9
Symbol
Value
Unit
°C/W
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
(IF = 40 A, TC = 25°C)
(IF = 40 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
Unit
V
0.50
0.48
0.63
0.68
mA
1.2
275
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
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2
MBR40L45CTG, NRVBB40L45CTT4G
TYPICAL CHARACTERISTICS
1000
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
1000
100
100
150°C
25°C
10
125°C
1
150°C
25°C
10
125°C
1
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, MAXIMUM FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.6
1E+00
IR, MAXIMUM REVERSE CURRENT (A)
1E+00
IR, REVERSE CURRENT (A)
150°C
1E−01
150°C
1E−01
125°C
1E−02
125°C
1E−02
1E−03
1E−03
1E−04
25°C
1E−04
25°C
1E−05
1E−05
5
10
15
20
25
30
35
40
45
50
0
5
10
VR, REVERSE VOLTAGE (V)
15
20
dc
40
35
Square Wave
30
25
20
15
10
5
0
80 90
30
35
40
Figure 4. Maximum Reverse Current
50
45
25
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
IF, AVERAGE FORWARD CURRENT (A)
0
100 110
120 130 140 150 160 170 180
TC, CASE TEMPERATURE (°C)
Figure 5. Current Derating for MBR40L45CTG
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3
45
50
MBR40L45CTG, NRVBB40L45CTT4G
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10000
Square Wave
dc
25°C
1000
100
0
R(t) TRANSIENT THERMAL RESISTANCE
C, CAPACITANCE (pF)
PFO, AVERAGE POWER
DISSIPATION (W)
TYPICAL CHARACTERISTICS
5
10
15
20
25
30
35
0
40
5
10
15
20
25
35
30
Io, AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
Figure 6. Forward Power Dissipation
Figure 7. Capacitance
40
45
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.01
0.01
P(pk)
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
T1, TIME (sec)
Figure 8. Thermal Response
Junction−to−Case for MBR40L45CTG
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4
1
10
100
1000
MBR40L45CTG, NRVBB40L45CTT4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
M
T B
M
N
R
M
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
U
L
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBR40L45CTG, NRVBB40L45CTT4G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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MBR40L45CT/D